Monolithic Integration of Si and GaAs Devices

1986 ◽  
Vol 67 ◽  
Author(s):  
H. K. Choi ◽  
G. W. Turner ◽  
B-Y. Tsaur ◽  
T. H. Windhorn
Keyword(s):  
Monolithic Integration ◽  
Double Heterostructure ◽  
Si Substrates ◽  
Gaas Substrates ◽  
Gaas Devices ◽  
Voltage Pulses ◽  
First Time

ABSTRACTIntegration of Si MOSFETs with GaAs MESFETs and with GaAs/AlGaAs double-heterostructure LEDs on monolithic GaAs/Si substrates is reported. Both Si MOSFETs and GaAs MESFETs show characteristics comparable to those for devices fabricated on separate Si and GaAs substrates. In LED/MOSFET integration, the cathode of each LED is connected with the drain of a MOSFET. This is the first time that Si and GaAs devices have been monolithically interconnected. LED modulation rates up to 27 Mbps have been achieved by applying a stream of voltage pulses to the MOSFET gate.

AlGaAs/GaAs Double-Heterostructure Optical Waveguide on Si Substrates

1991 ◽  
Vol 228 ◽  
Author(s):  
T. Yuasa ◽  
M. Umeno ◽  
S. Sakai ◽  
N. Wada ◽  
Y. Ueta
Keyword(s):  
Integrated Circuits ◽  
Optical Waveguides ◽  
Chemical Vapor ◽  
Step Method ◽  
Index Method ◽  
Double Heterostructure ◽  
Si Substrates ◽  
Effective Index Method ◽  
Gaas Devices ◽  
Cladding Layers

ABSTRACTAlGaAs/GaAs double-heterostructure (DH) optical waveguides on Si substrates which is important in future opto-electric integrated circuits (OEICs) utilizing both Si and GaAs devices is analyzed by the effective index method and fabricated by metalorganic chemical vapor deposition (MOCVD).The structures contain 0.8-μm-thick GaAs guiding layer sandwiched between two 1-μm-thick Al0.1Ga0.9 As cladding layers. All the layers were grown by MOCVD on (100) 2°-off Si substrates by two step method. A top cladding layer was etched leaving 2-μm wide mesa-stripes. The etched depth was changed from 0.65 to 0.90 μm. The field profiles were calculated and measured for 1.3 μm wavelength light. The measured and calculated profiles agree quite well with each other for all the. waveguides having different mesa height. This agreement makes us possible to design more complicated AlGaAs/GaAs waveguides and modulators on Si substrates.

scholarly journals STUDY OF THE COMPOSITION OF GaAsBi FILMS OBTAINED BY PULSED LASER

2021 ◽  
pp. 96-105
Author(s):  
Олег Васильевич Девицкий ◽  
Александр Александрович Кравцов ◽  
Игорь Александрович Сысоев
Keyword(s):  
Thin Film ◽  
Phonon Mode ◽  
Pulsed Laser ◽  
Photoluminescence Spectra ◽  
Energy Dispersive Analysis ◽  
Si Substrate ◽  
Si Substrates ◽  
Gaas Substrates ◽  
First Time ◽  
Maximum Content

Методом одноосного холодного прессования были изготовлены мишени GaAsBi с содержанием Bi 1 и 22%. Из полученных мишеней впервые было проведено импульсное лазерное напыления тонких пленок GaAsBi на подложках GaAs и Si. Были исследованы состав, спектры комбинационного рассеяния и фотолюминесценции тонких пленок GaAsBi, полученных из мишеней с содержанием Bi 1 и 22%. По данным спектров фотолюминесценции тонких пленок GaAsBi на подложках GaAs определено, максимальное содержание Bi в пленках не превышает 2,7 %. Полученные результаты хорошо коррелируют с результатами энергодисперсионного анализа, состав пленок, полученных из мишеней с содержанием Bi 1 и 22% - GaAs Bi и GaAsBi. Установлено, что фононная мода LO (GaBi). связанная с нарушением упорядоченности при смешении фаз GaAs и GaBi, находиться на частоте 181 см. Для тонкой пленки, полученной на подложке Si наблюдалась мода LO (GaAs), которая менее выражена и смещена на 3 см влево, в то время как запрещенная правилами отбора мода TO (GaAs) имеет более высокую интенсивность и ее смещение составляет около 1 см относительно частоты TO (GaAs) моды тонкой пленки, полученной на подложке GaAs . Uniaxial cold pressing was used to fabricate the GaAsBi targets with the Bi content of 1 and 22 %. From the obtained targets, pulsed laser deposition of GaAsBi thin films on the GaAs and Si substrates was carried out for the first time. We studied the composition, Raman and PL spectra of thin GaAsBi films obtained from targets with 1 and 22 % of Bi. According to the photoluminescence spectra of thin GaAsBi films on GaAs substrates, it was determined that the maximum content of Bi in the films did not exceed 2,7 %. The results obtained well correlate with the results of the energy dispersive analysis, the composition of films obtained from targets with the Bi content of 1 and 22% - GaAs Bi and GaAsBi. It was found that the LO(GaBi) phonon mode of associated with disordering during mixing of GaAs and GaBi phases to be at a frequency of 181 cm. For the thin film obtained on the Si substrate, the mode LO (GaAs) was observed that was less pronounced and shifted by 3 cm to the left, while the mode TO (GaAs), forbidden by the selection rules, had a higher intensity and its shift was of about 1 cm relative to the frequency of the mode TO (GaAs) of the thin film obtained on the GaAs substrate.

Rapid Epitaxial Growth of Si and SiGe Mono-Crystalline Films on Silicon-on-Glass Substrates by Reactive CVD Using SiH4, GeH4, and F2

2012 ◽  
Vol 1426 ◽  
pp. 331-337
Author(s):  
Hiroshi Noge ◽  
Akira Okada ◽  
Ta-Ko Chuang ◽  
J. Greg Couillard ◽  
Michio Kondo
Keyword(s):  
Epitaxial Growth ◽  
Heating Temperature ◽  
Exothermic Reaction ◽  
Epitaxial Films ◽  
Si Substrates ◽  
Glass Substrates ◽  
Good Crystallinity ◽  
Crystalline Films ◽  
Si Films ◽  
First Time

ABSTRACTWe have succeeded in the rapid epitaxial growth of Si, Ge, and SiGe films on Si substrates below 670 ºC by reactive CVD utilizing the spontaneous exothermic reaction between SiH4, GeH4, and F2. Mono-crystalline SiGe epitaxial films with Ge composition ranging from 0.1 to 1.0 have been successfully grown by reactive CVD for the first time.This technique has also been successfully applied to the growth of these films on silicon-on-glass substrates by a 20 - 50 ºC increase of the heating temperature. Over 10 μm thick epitaxial films at 3 nm/s growth rate are obtained. The etch pit density of the 5.2 μm-thick Si0.5Ge0.5 film is as low as 5 x 106 cm-2 on top. Mobilities of the undoped SiGe and Si films are 180 to 550 cm2/Vs, confirming the good crystallinity of the epitaxial films.

Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers

2003 ◽  
Vol 93 (1) ◽  
pp. 362-367 ◽  
Author(s):  
Michael E. Groenert ◽  
Christopher W. Leitz ◽  
Arthur J. Pitera ◽  
Vicky Yang ◽  
Harry Lee ◽  
...  
Keyword(s):  
Room Temperature ◽  
Monolithic Integration ◽  
Buffer Layers ◽  
Si Substrates

Formation of Sub-100 NM GE Wires on Si by E-Beam Evaporation/Lithography

1995 ◽  
Vol 380 ◽  
Author(s):  
C. Deng ◽  
J. C. Wu ◽  
C. J. Barbero ◽  
T. W. Sigmon ◽  
M. N. Wybourne
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Si Substrates ◽  
Novel Technique ◽  
Atomic Force ◽  
Transmission Electron ◽  
First Time ◽  
Scanning Electron

ABSTRACTA fabrication process for sub-100 nm Ge wires on Si substrates is reported for the first time. Wires with a cross section of 6 × 57 nm2 are demonstrated. The wire structures are analyzed by atomic force (AFM), scanning electron (SEM), and transmission electron microscopy (TEM). Sample preparation for TEM is performed using a novel technique using both pre and in situ deposition of multiple protection layers using a Focused Ion Beam (FIB) micromachining system.

Catastrophic degradation of InGaAsP/InGaP double‐heterostructure lasers grown on (001) GaAs substrates by liquid‐phase epitaxy

1985 ◽  
Vol 58 (11) ◽  
pp. 3996-4002 ◽  
Author(s):  
Osamu Ueda ◽  
Kiyohide Wakao ◽  
Satoshi Komiya ◽  
Akio Yamaguchi ◽  
Shoji Isozumi ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Double Heterostructure ◽  
Gaas Substrates

Laser Induced Metal and Alloy Plating with Simultaneous Silicide Compound Formation

1986 ◽  
Vol 71 ◽  
Author(s):  
J. Zahavi ◽  
S. Tamir ◽  
M. Halliwell
Keyword(s):  
Laser Irradiation ◽  
Pulse Laser ◽  
Silicon Substrates ◽  
Pulse Laser Irradiation ◽  
Compound Formation ◽  
Si Substrates ◽  
Gaas Substrates ◽  
Irradiation Energy ◽  
Nickel Deposits ◽  
Behavior Contracts

AbstractHighly selective metal and alloy deposition with simultaneous silicide formation - on semiconductor substrates immersed in commercial electroplating solutions has been investigated via pulse laser irradiation without masking procedures and external electric current.Specimens of 5i and GaAs substrates, immersed in gold and in palladiumnickel electroplating solutions, were irradiated by a Qswitch YAG pulse laser perpendicular to their surfaces at predesired local zones. The gold, palladium and nickel deposits thus obtained were subsequently examined and characterised by SEM, TEM, AES, ESCA and RBS.Deposit thickness ranged from a few hundred angstroms to several micrometers, depending primarily on the laser irradiation energy. The elemental Gold deposit exhibited Schottky barrier contacts with the GaAs and Si substrates. Palladium and nickel silicides obtained on n-type silicon substrates likewise exhibited Schottky behavior contracts.

Monolithic integration of GaAs/AlGaAs double-heterostructure LED's and Si MOSFET's

1986 ◽  
Vol 7 (9) ◽  
pp. 500-502 ◽  
Author(s):  
H.K. Choi ◽  
G.W. Turner ◽  
T.H. Windhorn ◽  
Bor-Yeu Tsaur
Keyword(s):  
Monolithic Integration ◽  
Double Heterostructure
Sign in / Sign up

Export Citation Format

Share Document