Effects of substrate preparation conditions on GaAs oval defects grown by molecular beam epitaxy

1986 ◽  
Vol 48 (11) ◽  
pp. 701-703 ◽  
Author(s):  
K. Fujiwara ◽  
Y. Nishikawa ◽  
Y. Tokuda ◽  
T. Nakayama
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Substrate Preparation ◽  
Preparation Conditions

Si‐substrate preparation for GaAs/Si molecular‐beam epitaxy at low temperature under a Si flux

1988 ◽  
Vol 64 (1) ◽  
pp. 246-248 ◽  
Author(s):  
J. Castagne ◽  
E. Bedel ◽  
C. Fontaine ◽  
A. Munoz‐Yague
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Si Substrate ◽  
Substrate Preparation

Gallium Nitride Epitaxy on Silicon: Importance of Substrate Preparation

1995 ◽  
Vol 395 ◽  
Author(s):  
G. A. Martin ◽  
B. N. Sverdlov ◽  
A. Botchkarev ◽  
H. Morkoç ◽  
D. J. Smith ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Substrate Preparation ◽  
Rocking Curve ◽  
X Ray ◽  
Surface Steps ◽  
Threading Defects ◽  
Atomically Flat

ABSTRACTHexagonal GaN films grown on non-isomorphic substrates are usually characterized by numerous threading defects which are essentially boundaries between wurtzite GaN domains where the stacking sequences do not align. One origin of these defects is irregularities on the substrate surface such as surface steps. Using Si <111> substrates and a substrate preparation procedure that makes wide atomically flat terraces, we demonstrate that reduction of these irregularities greatly improves the crystalline and luminescent quality of GaN films grown by plasma-enhanced molecular beam epitaxy. X-ray rocking curve width decreases from over 1 degree to less than 20 minutes, while PL halfwidth decreases from over 15 meV to less than 10 meV.

Trapping of Oxygen at Homoepitaxial Si-Si Interfaces Grown by Molecular Beam Epitaxy

1985 ◽  
Vol 59 ◽  
Author(s):  
R. Hull ◽  
M. E. Twigg ◽  
J. C. Bean ◽  
J. M. Gibson ◽  
D. C. Joy
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Molecular Beam ◽  
Defect Density ◽  
High Density ◽  
Buffer Layers ◽  
Si Substrates ◽  
Preparation Conditions ◽  
Primary Model ◽  
Post Deposition

ABSTRACTInterfaces between Si substrates and epitaxial Si buffer layers grown by Molecular Beam Epitaxy (MBE) are shown to contain a high density of SiOx pockets for certain sustrate preparation conditions. It is also shown that post-deposition thermal annealing of these structures grown upon Czochralski wafers can lead to a greatly increased defect density at the interface. The primary model proposed for this increase is trapping of background oxygen diffusing from the bulk of the Czochralski substrate wafers.

scholarly journals Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces

2002 ◽  
Vol 7 ◽  
Author(s):  
R. M. Feenstra ◽  
J. E. Northrup ◽  
Jörg Neugebauer
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Direct Determination ◽  
Surface Preparation ◽  
Scanning Tunneling ◽  
Molecular Beam Epitaxy Growth ◽  
Tunneling Microscopy ◽  
Preparation Conditions ◽  
Surface Reconstructions ◽  
Image Position

A review of surface structures of bare and adsorbate-covered GaN (0001) and (000) surfaces is presented, including results for In, Mg, Si, and H adsorbates. Emphasis is given to direct determination of surface structure employing experimental techniques such as scanning tunneling microscopy, electron diffraction, and Auger electron spectroscopy, and utilizing first principles computations of the total energy of various structural models. Different surface stoichiometries are studied experimentally by varying the surface preparation conditions (e.g. Ga-rich compared to N-rich), and the stoichiometry is included in the theory by performing calculations for various chemical potentials of the constituent atoms. Based on the work reviewed here, surface reconstructions for plasma-assisted molecular beam epitaxy growth of GaN (0001) and (000) surfaces are fairly well understood, but reconstructions for reactive molecular beam epitaxy or for metal-organic vapor phase epitaxy (both involving H, at moderate and high temperatures, respectively) are less well understood at present.

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