Substrate preparation and low-temperature boron doped silicon growth on wafer-scale charge-coupled devices by molecular beam epitaxy

2002 ◽  
Vol 20 (3) ◽  
pp. 1170 ◽  
Author(s):  
S. D. Calawa ◽  
B. E. Burke ◽  
P. M. Nitishin ◽  
A. H. Loomis ◽  
J. A. Gregory ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Substrate Preparation ◽  
Wafer Scale ◽  
Boron Doped ◽  
Charge Coupled Devices ◽  
Doped Silicon ◽  
Silicon Growth

Si‐substrate preparation for GaAs/Si molecular‐beam epitaxy at low temperature under a Si flux

1988 ◽  
Vol 64 (1) ◽  
pp. 246-248 ◽  
Author(s):  
J. Castagne ◽  
E. Bedel ◽  
C. Fontaine ◽  
A. Munoz‐Yague
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Si Substrate ◽  
Substrate Preparation

High-quality epitaxial CoFe/Si(111) heterostructures fabricated by low-temperature molecular beam epitaxy

2010 ◽  
Vol 97 (19) ◽  
pp. 192501 ◽  
Author(s):  
Y. Maeda ◽  
K. Hamaya ◽  
S. Yamada ◽  
Y. Ando ◽  
K. Yamane ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
High Quality

Local structures around Er atoms doped in GaAs by low-temperature molecular beam epitaxy

2003 ◽  
Vol 6 (5-6) ◽  
pp. 425-427 ◽  
Author(s):  
K. Ogawa ◽  
H. Ofuchi ◽  
H. Maki ◽  
T. Sonoyama ◽  
D. Inoue ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Local Structures

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Optical properties of quantum wells grown upon gas source molecular‐beam epitaxy low‐temperature buffers

1991 ◽  
Vol 69 (11) ◽  
pp. 7942-7944 ◽  
Author(s):  
K. T. Shiralagi ◽  
R. A. Puechner ◽  
K. Y. Choi ◽  
R. Droopad ◽  
G. N. Maracas
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Gas Source

Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Kinetic Rates ◽  
Kinetics Of ◽  
Low Temperature Epitaxy

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

Highly mismatched N-rich GaN1−xSbx films grown by low temperature molecular beam epitaxy

2013 ◽  
Vol 102 (10) ◽  
pp. 102104 ◽  
Author(s):  
K. M. Yu ◽  
W. L. Sarney ◽  
S. V. Novikov ◽  
D. Detert ◽  
R. Zhao ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam

Measurements of parameters of the low-temperature molecular-beam epitaxy of GaAs

2002 ◽  
Vol 36 (8) ◽  
pp. 837-840 ◽  
Author(s):  
V. V. Preobrazhenskii ◽  
M. A. Putyato ◽  
B. R. Semyagin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam
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