Implications of the configuration‐dependent reactive incorporation growth process for the group V pressure and substrate temperature dependence of III‐V molecular beam epitaxial growth and the dynamics of the reflection high‐energy electron diffraction intensity

1985 ◽  
Vol 47 (3) ◽  
pp. 247-249 ◽  
Author(s):  
A. Madhukar ◽  
S. V. Ghaisas
Keyword(s):  
Electron Diffraction ◽  
Substrate Temperature ◽  
Growth Process ◽  
Molecular Beam ◽  
High Energy ◽  
High Energy Electron ◽  
Diffraction Intensity ◽  
Group V ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth
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