Frequency analysis of reflection high‐energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on nominally oriented (111)B substrates

1995 ◽  
Vol 66 (5) ◽  
pp. 610-612 ◽  
Author(s):  
B. J. Garcia ◽  
C. Fontaine ◽  
A. Muñoz‐Yagüe
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