Interface disorder in GaAs/AlGaAs quantum wells grown by molecular beam epitaxy at high substrate temperature

1985 ◽  
Vol 47 (9) ◽  
pp. 952-954 ◽  
Author(s):  
T. Hayakawa ◽  
T. Suyama ◽  
K. Takahashi ◽  
M. Kondo ◽  
S. Yamamoto ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
High Substrate Temperature ◽  
High Substrate ◽  
Interface Disorder

Interface disorder in GaAs/AlGaAs quantum wells grown by molecular beam epitaxy on 0.5°‐misoriented (111)Bsubstrates

1987 ◽  
Vol 51 (21) ◽  
pp. 1705-1707 ◽  
Author(s):  
T. Hayakawa ◽  
M. Kondo ◽  
T. Morita ◽  
K. Takahashi ◽  
T. Suyama ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Interface Disorder

Narrow Si doping distributions in 6-doped GaAs, Al0.3Ga0.7As and Quantum Wells grown by Gas Source Molecular Beam Epitaxy

1989 ◽  
Vol 145 ◽  
Author(s):  
J.E. Cunningham ◽  
T.H. Chin ◽  
B. Tell ◽  
W. Jan ◽  
J. A. Ditzenberger ◽  
...  
Keyword(s):  
Activation Energy ◽  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Atomic Diffusion ◽  
Si Doping ◽  
Gas Source ◽  
Capacitance Voltage

AbstractWe report very small interdiffusion and surface segregation of Si in δ-doped GaAs, A10.3Gao.7As and Quantum Wells grown at 580 C by Gas Source Molecular Beam Epitaxy. Capacitance-Voltage profiles of δ-doped layers are 38 Å wide for growth at 580 C and further, insignificant profile narrowing is observed at 530C and below. Much wider profiles are observed at equivalent substrate temperature for As4 growth. Atomic diffusion of Si in δ-doped Al0.3Ga0.7As is found to have a rate of D0=5× 10−cm2/sec with an activation energy of 1.8 eV.

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Optical properties of quantum wells grown upon gas source molecular‐beam epitaxy low‐temperature buffers

1991 ◽  
Vol 69 (11) ◽  
pp. 7942-7944 ◽  
Author(s):  
K. T. Shiralagi ◽  
R. A. Puechner ◽  
K. Y. Choi ◽  
R. Droopad ◽  
G. N. Maracas
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Gas Source
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