Narrow Si doping distributions in 6-doped GaAs, Al0.3Ga0.7As and Quantum Wells grown by Gas Source Molecular Beam Epitaxy

1989 ◽  
Vol 145 ◽  
Author(s):  
J.E. Cunningham ◽  
T.H. Chin ◽  
B. Tell ◽  
W. Jan ◽  
J. A. Ditzenberger ◽  
...  
Keyword(s):  
Activation Energy ◽  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Atomic Diffusion ◽  
Si Doping ◽  
Gas Source ◽  
Capacitance Voltage

AbstractWe report very small interdiffusion and surface segregation of Si in δ-doped GaAs, A10.3Gao.7As and Quantum Wells grown at 580 C by Gas Source Molecular Beam Epitaxy. Capacitance-Voltage profiles of δ-doped layers are 38 Å wide for growth at 580 C and further, insignificant profile narrowing is observed at 530C and below. Much wider profiles are observed at equivalent substrate temperature for As4 growth. Atomic diffusion of Si in δ-doped Al0.3Ga0.7As is found to have a rate of D0=5× 10−cm2/sec with an activation energy of 1.8 eV.

Optical properties of quantum wells grown upon gas source molecular‐beam epitaxy low‐temperature buffers

1991 ◽  
Vol 69 (11) ◽  
pp. 7942-7944 ◽  
Author(s):  
K. T. Shiralagi ◽  
R. A. Puechner ◽  
K. Y. Choi ◽  
R. Droopad ◽  
G. N. Maracas
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Gas Source
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