Interface disorder in GaAs/AlGaAs quantum wells grown by molecular beam epitaxy on 0.5°‐misoriented (111)Bsubstrates

1987 ◽  
Vol 51 (21) ◽  
pp. 1705-1707 ◽  
Author(s):  
T. Hayakawa ◽  
M. Kondo ◽  
T. Morita ◽  
K. Takahashi ◽  
T. Suyama ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Interface Disorder

Interface disorder in GaAs/AlGaAs quantum wells grown by molecular beam epitaxy at high substrate temperature

1985 ◽  
Vol 47 (9) ◽  
pp. 952-954 ◽  
Author(s):  
T. Hayakawa ◽  
T. Suyama ◽  
K. Takahashi ◽  
M. Kondo ◽  
S. Yamamoto ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
High Substrate Temperature ◽  
High Substrate ◽  
Interface Disorder

Optical properties of quantum wells grown upon gas source molecular‐beam epitaxy low‐temperature buffers

1991 ◽  
Vol 69 (11) ◽  
pp. 7942-7944 ◽  
Author(s):  
K. T. Shiralagi ◽  
R. A. Puechner ◽  
K. Y. Choi ◽  
R. Droopad ◽  
G. N. Maracas
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Gas Source

Laser Quality AlGaAs-GaAs Quantum Wells Grown on Low Temperature GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
Y. Hwang ◽  
D. Zhang ◽  
T. Zhang ◽  
M. Mytych ◽  
R. M. Kolbas
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Barrier Layer ◽  
Molecular Beam ◽  
Optical Quality ◽  
First Order ◽  
Gaas Buffer Layer ◽  
Low Temperature Gaas ◽  
Lt Gaas

ABSTRACTIn this work we demonstrate that photopumped quantum wellheterostructure lasers with excellent optical quality can be grown ontop of a LT GaAs buffer layer by molecular beam epitaxy. Hightemperature thermal annealing of these lasers blue-shifts the laseremission wavelengths but the presence/absence of a LT GaAs layerhad little effect on the overall laser thresholds. Also, to first order itwas not necessary to include an AlAs barrier layer to preventadverse effects (as has been necessary in the gate stack of MESFETs to prevent carrier compensation).

Photoluminescence from GaAs/AlGaAs Quantum Wells Grown at 350°C by Conventional Molecular Beam Epitaxy

1991 ◽  
Vol 30 (Part 2, No. 10A) ◽  
pp. L1726-L1728 ◽  
Author(s):  
Yoshinobu Sekiguchi ◽  
Sei-ichi Miyazawa ◽  
Natsuhiko Mizutani
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam
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