Low-substrate temperature molecular beam epitaxy growth and thermal stability of strained InGaAs/GaAs single-quantum-wells

Author(s):  
Boris S. Elman ◽  
Emil S. Koteles ◽  
Paul Melman ◽  
Mark A. Rothman
1989 ◽  
Vol 160 ◽  
Author(s):  
B. Elman ◽  
Emil S. Koteles ◽  
P. Melman ◽  
C.A. Armiento ◽  
C. Jagannath

AbstractWe present a study of the structural stability of InGaAs/GaAs strained single quantum wells (SQW) grown with a variety of indium compositions and with well widths close to critical thickness values. The samples were grown by molecular beam epitaxy and were subjected to furnace annealing as well as ion implantation followed by rapid thermal annealing. Changes in low temperature photoluminescence linewidths were used to evaluate the stability of strained SQWs. We observed both strain relief, in wide SQWs and strain recovery, in higher indium composition narrow quantum wells which were partially relaxed (low dislocation density) as-grown.


2002 ◽  
Vol 299 (1) ◽  
pp. 79-84 ◽  
Author(s):  
M Xu ◽  
C.X Liu ◽  
H.F Liu ◽  
G.M Luo ◽  
X.M Chen ◽  
...  

2013 ◽  
Vol 25 (6) ◽  
pp. 1523-1526
Author(s):  
万文坚 Wan Wenjian ◽  
尹嵘 Yin Rong ◽  
韩英军 Han Yingjun ◽  
王丰 Wang Feng ◽  
郭旭光 Guo Xuguang ◽  
...  

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