Influence of light‐induced defects in hydrogenated amorphous silicon on charge carrier dynamics

1985 ◽  
Vol 46 (1) ◽  
pp. 69-70 ◽  
Author(s):  
A. Werner ◽  
M. Kunst
Keyword(s):  
Charge Carrier ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Carrier Dynamics ◽  
Charge Carrier Dynamics ◽  
Induced Defects ◽  
Hydrogenated Amorphous

Erratum: Picosecond carrier dynamics in optically illuminated glow discharge hydrogenated amorphous silicon [Appl. Phys. Lett. 42, 79 (1983)]

1983 ◽  
Vol 42 (10) ◽  
pp. 914-914
Author(s):  
Shuji Komuro ◽  
Yoshinobu Aoyagi ◽  
Yusaburo Segawa ◽  
Susumu Namba ◽  
Akio Masuyama ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Carrier Dynamics ◽  
Hydrogenated Amorphous

Role of the hydrogen in the light-induced defects in undoped hydrogenated amorphous silicon

1991 ◽  
pp. 265-268
Author(s):  
H. Labidi ◽  
K. Zellama ◽  
P. Germain ◽  
M. Astier ◽  
D. Lortigues ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Induced Defects ◽  
Hydrogenated Amorphous

Kinetics of Growth and Recovery of Light-Induced Defects Under High-Intensity Illumination

1992 ◽  
Vol 258 ◽  
Author(s):  
Masao Isomura ◽  
Sigurd Wagner
Keyword(s):  
Light Intensity ◽  
Amorphous Silicon ◽  
High Intensity ◽  
Hydrogenated Amorphous Silicon ◽  
Increased Sensitivity ◽  
Induced Defects ◽  
Hydrogenated Amorphous ◽  
Kinetics Of ◽  
Diffusion Of Hydrogen

ABSTRACTWe report a study of the rates of generation and of annealing of the light-induced defects in hydrogenated amorphous silicon (a-Si:H). The rates of generation are found to be sensitive to temperature when the light intensity is high. This increased sensitivity to temperature at high rates suggests that a temperature-activated process such as hydrogen motion controls the rates of generation more when they are high. The rate of annealing at 130°C is strongly accelerated by illumination, and depends strongly on the light intensity. This may be explained by the diffusion of hydrogen, accelerated by excess carriers.

Picosecond carrier dynamics in optically illuminated glow discharge hydrogenated amorphous silicon

1983 ◽  
Vol 42 (1) ◽  
pp. 79-81 ◽  
Author(s):  
Shuji Komuro ◽  
Yoshinobu Aoyagi ◽  
Yusaburo Segawa ◽  
Susumu Namba ◽  
Akio Masuyama ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Carrier Dynamics ◽  
Hydrogenated Amorphous
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