Erratum: Picosecond carrier dynamics in optically illuminated glow discharge hydrogenated amorphous silicon [Appl. Phys. Lett. 42, 79 (1983)]

1983 ◽  
Vol 42 (10) ◽  
pp. 914-914
Author(s):  
Shuji Komuro ◽  
Yoshinobu Aoyagi ◽  
Yusaburo Segawa ◽  
Susumu Namba ◽  
Akio Masuyama ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Carrier Dynamics ◽  
Hydrogenated Amorphous

Picosecond carrier dynamics in optically illuminated glow discharge hydrogenated amorphous silicon

1983 ◽  
Vol 42 (1) ◽  
pp. 79-81 ◽  
Author(s):  
Shuji Komuro ◽  
Yoshinobu Aoyagi ◽  
Yusaburo Segawa ◽  
Susumu Namba ◽  
Akio Masuyama ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Carrier Dynamics ◽  
Hydrogenated Amorphous

Optical switching in hydrogenated amorphous silicon–sulfur alloy prepared by glow discharge

2004 ◽  
Vol 345-346 ◽  
pp. 302-305 ◽  
Author(s):  
S. Al-Dallal ◽  
F.Z. Henari ◽  
S.M. Al-Alawi ◽  
S.R. Arekat ◽  
H. Manaa
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Optical Switching ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

Defect States in Hydrogenated Amorphous Silicon-Sulphur Alloys by ESR and PAS

1991 ◽  
Vol 219 ◽  
Author(s):  
Gaorong Han ◽  
Jianmin Qiao ◽  
Piyi Du ◽  
Zhonghua Jiang ◽  
Zishang Ding
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Spin Density ◽  
Molecular Hydrogen ◽  
Annealing Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Sulphur Content ◽  
Defect States ◽  
Hydrogenated Amorphous

ABSTRACTWe have presented ESR and PAS measurements for a series of a-SiS:H and a-Si: H films deposited by glow discharge at different parameters. The spin density in a-SiS:H alloys measured by ESR is essentially independent of the sulphur content, while the density of defects measured by PAS increases significantly with the increasing of sulphur content. The ESR signals in a-SiS:H alloys strongly depend on both annealing and illumination. The spin density increases up to 540°C and then decreases with raising annealing temperature for a-SiS:H and a-Si:H alloys. The results suggest that some new defects such as molecular hydrogen and microvoids are appeared when addition of sulphur to a-Si:H films.

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