Determination of microscopic structural quality of molecular beam epitaxial grown GaAs/AlGaAs interface by high-resolution photoluminescence spectroscopy

1985 ◽  
Vol 3 (4) ◽  
pp. 1061 ◽  
Author(s):  
Jasprit Singh
Keyword(s):  
High Resolution ◽  
Molecular Beam ◽  
Photoluminescence Spectroscopy ◽  
Structural Quality ◽  
Molecular Beam Epitaxial

Electric and thermoelectric properties of CdTe/PbTe epitaxial nanocomposite

2014 ◽  
Vol 07 (06) ◽  
pp. 1440007
Author(s):  
Michal Szot ◽  
Krzysztof Dybko ◽  
Piotr Dziawa ◽  
Leszek Kowalczyk ◽  
Viktor Domukhovski ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Carrier Mobility ◽  
Room Temperature ◽  
Molecular Beam ◽  
High Quality ◽  
Polycrystalline Solid ◽  
Hall Effect Measurements ◽  
Shubnikov De Haas Oscillations

The electric and thermoelectric properties of novel, CdTe / PbTe layered nanocomposite material are investigated. The molecular beam epitaxy (MBE) method was used for preparation of samples with well controlled distances (from 20 to 70 nm) between the layers of CdTe nanograins embedded in PbTe thermoelectric matrix as well as with number of these layers from 2 to 10. The Hall effect measurements performed in temperature range from 4–300 K revealed that carrier mobility is strongly affected by scattering on CdTe grain boundaries. The observation of Shubnikov-de Haas oscillations confirms high quality of the samples and allows determination of effective mass of conducting electrons m* = 0.04m0. The measurements of the room temperature Seebeck coefficient together with electrical conductivity lead to the power factors which are comparable to those reported in PbTe / CdTe polycrystalline solid solutions.

Study of the structural quality of heteroepitaxial silicon-on-sapphire structures by high-resolution X-ray diffraction, X-ray reflectivity, and electron microscopy

2014 ◽  
Vol 59 (3) ◽  
pp. 315-322 ◽  
Author(s):  
A. E. Blagov ◽  
A. L. Vasiliev ◽  
A. S. Golubeva ◽  
I. A. Ivanov ◽  
O. A. Kondratev ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals Morphology and surface reconstructions of m-plane GaN

2002 ◽  
Vol 743 ◽  
Author(s):  
C. D. Lee ◽  
R. M. Feenstra ◽  
J. E. Northrup ◽  
L. Lymperakis ◽  
J. Neugebauer
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Structural Quality ◽  
Surface Reconstructions ◽  
Gan Buffer Layer

ABSTRACTM-plane GaN(1100) is grown by plasma assisted molecular beam epitaxy on ZnO(1100) substrates. A low-temperature GaN buffer layer is found to be necessary to obtain good structural quality of the films. Well oriented (1100) GaN films are obtained, with a slate like surface morphology. On the GaN(1100) surfaces, reconstructions with symmetry of c(2×2) and approximate “4×5” are found under N- and Ga-rich conditions, respectively. We propose a model for Ga-rich conditions with the “4×5” structure consisting of ≥ 2 monolayers of Ga terminating the GaN surface.

The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy

2010 ◽  
Vol 645-648 ◽  
pp. 367-370 ◽  
Author(s):  
Maya Marinova ◽  
Alkyoni Mantzari ◽  
Milena Beshkova ◽  
Mikael Syväjärvi ◽  
Rositza Yakimova ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Temperature Gradient ◽  
Defect Structure ◽  
Temperature Gradients ◽  
Structural Quality ◽  
Fault Density ◽  
Transmission Electron

In the present work the structural quality of 3C-SiC layers grown by sublimation epitaxy is studied by means of conventional and high resolution transmission electron microscopy. The layers were grown on Si-face 6H-SiC nominally on-axis substrates at a temperature of 2000°C and different temperature gradients, ranging from 5 to 8 °C /mm. The influence of the temperature gradient on the structural quality of the layers is discussed. The formation of specific twin complexes and conditions for lower stacking fault density are investigated.

Tem Study of the Structure of Mbe GaAs Layers Grown at Low Temperature

1990 ◽  
Vol 198 ◽  
Author(s):  
Zuzanna Liliental-Weber
Keyword(s):  
Electron Microscopy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Critical Thickness ◽  
Stacking Faults ◽  
Structural Quality ◽  
Crystalline Perfection ◽  
Transmission Electron ◽  
Low Temperature Gaas

ABSTRACTThe structural quality of GaAs layers grown at 200°C by molecular beam epitaxy (MBE) was investigated by transmission electron microscopy (TEM). We found that a high crystalline perfection can be achieved in the layers grown at this low temperature for thickness up to 3 μm. In some samples we observed pyramid-shaped defects with polycrystalline cores surrounded by microtwins, stacking faults and dislocations. The size of these cores increased as the growth temperature was decreased and as the layer thickness was increased. The upper surface of layers with pyramidal defects became polycrystalline at a critical thickness of the order of 3μm. We suggested that the low-temperature GaAs becomes polycrystalline at a critical thickness either because of a decrease in substrate temperature during growth or because strain induced by excess As incorporated in these layers leads to the formation of misoriented GaAs nuclei, thereby initiating polycrystalline growth. The pyramidal shape of the defects results from a growth-rate hierarchy of the low index planes in GaAs.

Molecular Beam Epitaxial Growth of Cdl-xznxTe Matched to HgCdTe Alloys

1986 ◽  
Vol 90 ◽  
Author(s):  
N. Magnea ◽  
F. Dal'bo ◽  
J. L. Pautrat ◽  
A. Million ◽  
L. Di Cioccio ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Bulk Material ◽  
Strained Layers ◽  
Molecular Beam Epitaxial ◽  
Transmission Electron ◽  
Molecular Beam Epitaxial Growth ◽  
Thick Layers

ABSTRACTCD1−xZnxTe alloys of various composition have been grown by the Molecular Beam Epitaxy Technique and characterized by Transmission Electron Microscopy. C(V) measurements and photoluminescence spectroscopy techniques. The quality of the thick layers is comparable to that of bulk material. Thin strained layers have also been grown whose interfaces are structurally good. The recombination within a CdTe well confined between Cd1−xZnxTe barriers is dominated by intrinsic processes.

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