The effect of electron irradiation on the low‐temperature emission spectra from Ge‐doped Ga0.60Al0.40As grown by liquid phase epitaxy

1981 ◽  
Vol 38 (11) ◽  
pp. 881-883 ◽  
Author(s):  
V. Swaminathan ◽  
L. C. Kimerling ◽  
W. R. Wagner
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
Electron Irradiation ◽  
Liquid Phase Epitaxy ◽  
Emission Spectra

Low-temperature liquid-phase epitaxy of YBa2Cu3Oyfilms by the molten KOH method

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EJ13 ◽  
Author(s):  
Shuhei Funaki ◽  
Yasuji Yamada ◽  
Ryota Okunishi ◽  
Yugo Miyachi
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
Liquid Phase Epitaxy ◽  
Temperature Liquid

Low threshold quantum well AlGaAs-heterolasers fabricated by low temperature liquid phase epitaxy

1991 ◽  
Author(s):  
V. M. Andreev ◽  
A. B. Kazantsev ◽  
V. R. Larlonov ◽  
V. D. Rumyantsev ◽  
V. P. Khvostikov
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
Quantum Well ◽  
Liquid Phase Epitaxy ◽  
Low Threshold ◽  
Temperature Liquid

Low-temperature growth of midwavelength infrared liquid phase epitaxy HgCdTe on sapphire

1991 ◽  
Author(s):  
S. Johnston ◽  
E. R. Blazejewski ◽  
J. Bajaj ◽  
J. S. Chen ◽  
L. Bubulac ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
Liquid Phase Epitaxy ◽  
Temperature Growth ◽  
Low Temperature Growth

Low temperature liquid phase epitaxy with Sn-based solvent

2007 ◽  
Vol 4 (4) ◽  
pp. 1397-1400 ◽  
Author(s):  
F. Abdo ◽  
A. Fave ◽  
M. Lemiti ◽  
A. Pisch ◽  
C. Bernard
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
Liquid Phase Epitaxy ◽  
Temperature Liquid

Identification and Sources of Impurities in InGaAs Grown by Liquid Phase Epitaxy

1986 ◽  
Vol 90 ◽  
Author(s):  
D. G. Knight ◽  
C. J. Miner ◽  
A. Majeed
Keyword(s):  
High Temperature ◽  
Liquid Phase ◽  
Low Temperature ◽  
Liquid Phase Epitaxy ◽  
High Purity ◽  
Photoluminescence Spectra ◽  
Donor And Acceptor ◽  
Sulfur Containing ◽  
Sulfur Containing Compounds ◽  
Low Temperature Photoluminescence

ABSTRACTHigh purity In.53 Ga.47 As and InP with carrier concentrations [ND–NA] < 5×1015 cm−3 has been grown by the LPE technique on both n-type and semi-insulating substrates to detect and identify trace donor and acceptor impurities. Acceptor impurities have been detected in low temperature photoluminescence spectra where LPE melt baking and growth programs indicate a melt origin for two of these species, one of which is zinc. Data from semiconductor profiles provides evidence for sulfur and tin donor impurities, which comes from the rinse melt used to etch back substrates doped with the respective contaminants. Silicon and sulfur contaminants have been detected by SIMS measurements; and may arise not only from the indium and III-V materials, but also the graphite boat used to grow the epilayers. Volatile sulfur-containing compounds have been detected during high temperature bake-out of high purity graphite boats.

Synthesis of AlGaAs-based strained separately confined heterostructure laser diodes by low temperature liquid-phase epitaxy

2004 ◽  
Vol 260 (3-4) ◽  
pp. 348-359 ◽  
Author(s):  
S.S Chandvankar ◽  
A.P Shah ◽  
A Bhattacharya ◽  
K.S Chandrasekaran ◽  
B.M Arora
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
Liquid Phase Epitaxy ◽  
Laser Diodes ◽  
Heterostructure Laser ◽  
Temperature Liquid
Sign in / Sign up

Export Citation Format

Share Document