Growth of undoped, high purity, high resistivity ZnSe layers by molecular beam epitaxy

1984 ◽  
Vol 45 (12) ◽  
pp. 1300-1302 ◽  
Author(s):  
Kiyoshi Yoneda ◽  
Yuji Hishida ◽  
Tadao Toda ◽  
Hiroaki Ishii ◽  
Tatsuhiko Niina
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Purity ◽  
Molecular Beam ◽  
High Resistivity

Interface effects on electrical properties of high purity InP grown by gas-source molecular beam epitaxy

1991 ◽  
Vol 110 (4) ◽  
pp. 910-914 ◽  
Author(s):  
K. Rakennus ◽  
K. Tappura ◽  
T. Hakkarainen ◽  
H. Asonen ◽  
R. Laiho ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
High Purity ◽  
Molecular Beam ◽  
Gas Source ◽  
Interface Effects

Heterostructures of GaAs and AlAs on Silicon: X-Ray Analysis and Excimer Laser Annealing

1988 ◽  
Vol 116 ◽  
Author(s):  
A. Georgakilas ◽  
M. Fatemi ◽  
L. Fotiadis ◽  
A. Christou
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Excimer Laser ◽  
Molecular Beam ◽  
Laser Annealing ◽  
High Resistivity ◽  
Silicon Substrates ◽  
Excimer Laser Annealing ◽  
X Ray ◽  
High Resistivity Silicon

AbstractOne micron thick AlAs/GaAs structures have been deposited by molecular beam epitaxy onto high resistivity silicon substrates. Subsequent to deposition, it is shown that Excimer laser annealing up to 120mJ/cm2 at 248nm improves the GaAs mobility to approximately 2000cm2 /v-s. Dislocation density, however, did not decrease up to 180mJ/cm2 showing that improvement in transport properties may not be accompanied by an associated decrease in dislocation density at the GaAs/Si interface.

Growth by molecular beam epitaxy and characterization of high purity GaAs and AlGaAs

1983 ◽  
Vol 54 (12) ◽  
pp. 6982-6988 ◽  
Author(s):  
M. Heiblum ◽  
E. E. Mendez ◽  
L. Osterling
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Purity ◽  
Molecular Beam

High‐resistivity GaSb grown by molecular‐beam epitaxy

1992 ◽  
Vol 72 (4) ◽  
pp. 1316-1319 ◽  
Author(s):  
A. Y. Polyakov ◽  
M. Stam ◽  
A. G. Milnes ◽  
R. G. Wilson ◽  
Z. Q. Fang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Resistivity

High-Resistivity Semi-insulating AlSb on GaAs Substrates Grown by Molecular Beam Epitaxy

2016 ◽  
Vol 45 (4) ◽  
pp. 2025-2030 ◽  
Author(s):  
E. I. Vaughan ◽  
S. Addamane ◽  
D. M. Shima ◽  
G. Balakrishnan ◽  
A. A. Hecht
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Resistivity ◽  
Gaas Substrates

Low‐temperature growth of high resistivity GaP by gas‐source molecular beam epitaxy

1992 ◽  
Vol 61 (14) ◽  
pp. 1646-1648 ◽  
Author(s):  
J. Ramdani ◽  
Y. He ◽  
M. Leonard ◽  
N. El‐Masry ◽  
S. M. Bedair
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
High Resistivity ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Gas Source

High-purity InP grown by gas source molecular beam epitaxy (GSMBE)

1990 ◽  
Vol 105 (1-4) ◽  
pp. 97-100 ◽  
Author(s):  
M. Lambert ◽  
A. Péralès ◽  
R. Vergnaud ◽  
C. Starck
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Purity ◽  
Molecular Beam ◽  
Gas Source
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