High‐resistivity GaSb grown by molecular‐beam epitaxy

1992 ◽  
Vol 72 (4) ◽  
pp. 1316-1319 ◽  
Author(s):  
A. Y. Polyakov ◽  
M. Stam ◽  
A. G. Milnes ◽  
R. G. Wilson ◽  
Z. Q. Fang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Resistivity

Heterostructures of GaAs and AlAs on Silicon: X-Ray Analysis and Excimer Laser Annealing

1988 ◽  
Vol 116 ◽  
Author(s):  
A. Georgakilas ◽  
M. Fatemi ◽  
L. Fotiadis ◽  
A. Christou
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Excimer Laser ◽  
Molecular Beam ◽  
Laser Annealing ◽  
High Resistivity ◽  
Silicon Substrates ◽  
Excimer Laser Annealing ◽  
X Ray ◽  
High Resistivity Silicon

AbstractOne micron thick AlAs/GaAs structures have been deposited by molecular beam epitaxy onto high resistivity silicon substrates. Subsequent to deposition, it is shown that Excimer laser annealing up to 120mJ/cm2 at 248nm improves the GaAs mobility to approximately 2000cm2 /v-s. Dislocation density, however, did not decrease up to 180mJ/cm2 showing that improvement in transport properties may not be accompanied by an associated decrease in dislocation density at the GaAs/Si interface.

High-Resistivity Semi-insulating AlSb on GaAs Substrates Grown by Molecular Beam Epitaxy

2016 ◽  
Vol 45 (4) ◽  
pp. 2025-2030 ◽  
Author(s):  
E. I. Vaughan ◽  
S. Addamane ◽  
D. M. Shima ◽  
G. Balakrishnan ◽  
A. A. Hecht
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Resistivity ◽  
Gaas Substrates

Low‐temperature growth of high resistivity GaP by gas‐source molecular beam epitaxy

1992 ◽  
Vol 61 (14) ◽  
pp. 1646-1648 ◽  
Author(s):  
J. Ramdani ◽  
Y. He ◽  
M. Leonard ◽  
N. El‐Masry ◽  
S. M. Bedair
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
High Resistivity ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Gas Source

Growth of High-Resistivity Wurtzite and Zincblende Structure Single Crystal Gan by Reactive-Ion Molecular Beam Epitaxy

1989 ◽  
Vol 162 ◽  
Author(s):  
R. C. Powell ◽  
G. A. Tomasch ◽  
Y.-W. Kim ◽  
J. A. Thornton ◽  
J. E. Greene
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Average Energy ◽  
Film Surface ◽  
Ion Source ◽  
Low Energy ◽  
High Resistivity ◽  
Effusion Cell ◽  
Lattice Constants

ABSTRACTEpitaxial GaN films have been grown at temperatures between 600 and 900 °C by reactive-ion molecular-beam epitaxy. Ga was provided by evaporation from an effusion cell while nitrogen was supplied from a low-energy, single-grid, ion source. The average energy per accelerated N incident at the growing film surface was ≈ 19 eV. Films deposited on Al2O3(0112) and MgO(100)l×l substrates had wurtzite (a-GaN) and metastable zincblende (α-GaN) structures, respectively. The lattice constants were a = 0.3192 nm and c = 0.5196 nm for α;-GaN and a = 0.4531 nm for β -GaN. The room-temperature optical bandgap Eg of zincblende GaN, 3.30 eV, was found to be 0.11 eV lower than that of the hexagonal polymorph α-GaN. All films were n-type with electron carrier concentrations which decreased from 4×1018 to 8×1013 cm−3 with increasing incident N2+/Ga flux ratios between 0.63 and 3.9. Resistivities <106Ω-cm were achieved.

High resistivity LT-In0.47Ga0.53P grown by gas source molecular beam epitaxy

1993 ◽  
Vol 22 (12) ◽  
pp. 1481-1485 ◽  
Author(s):  
Y. He ◽  
J. Ramdani ◽  
N. A. El-Masry ◽  
D. C. Look ◽  
S. M. Bedair
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Resistivity ◽  
Gas Source

Thermally stimulated current spectroscopy of carbon-doped GaN grown by molecular beam epitaxy

2003 ◽  
Vol 798 ◽  
Author(s):  
Z-Q. Fang ◽  
D. C. Look ◽  
R. Armitage ◽  
Q. Yang ◽  
E. R. Weber
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Thermal Emission ◽  
Deep Level ◽  
High Resistivity ◽  
Organic Chemical ◽  
Thermally Stimulated Current ◽  
Chemical Phase ◽  
Metal Organic ◽  
Transient Spectroscopy

ABSTRACTDeep traps in semi-insulating (SI) or high-resistivity C-doped GaN grown by metal-organic chemical-phase deposition or molecular-beam epitaxy have been studied by thermally stimulated current (TSC) spectroscopy. Incorporation of carbon in GaN introduces CNacceptors, resulting in compensation and formation of SI-GaN; however, as [C] increases in the GaN samples, both resistivity and activation energy of the dark current decrease. In the GaN samples with low [C], we find at least six TSC traps: B (0.61 eV), Bx(0.50 eV), C1(0.44 eV), C (0.32 eV), D (0.23 eV), and E (0.16 eV), all of which are very similar to electron traps typically found in n-type GaN by deep level transient spectroscopy (DLTS). However, in the GaN sample with the highest [C], both traps E and B are suppressed, and instead, trap Bxappears. Based on DLTS studies of electron-irradiated and plasma-etched GaN samples, we believe that traps E, D and C are related to VN, and that trap B is probably related to VGa, in the form of complexes such as VGa-ON. As [C] increases, CGadonors become more favorable, and the transition of trap B to trap Bxmay suggest that CGarelated complexes are forming. In comparison with lightly C-doped GaN, heavily C-doped GaN sample exhibits very strong PPC at 83 K. We show that the PPC in both cases can be simply explained by the thermal emission of carriers from shallower traps.

Growth of undoped, high purity, high resistivity ZnSe layers by molecular beam epitaxy

1984 ◽  
Vol 45 (12) ◽  
pp. 1300-1302 ◽  
Author(s):  
Kiyoshi Yoneda ◽  
Yuji Hishida ◽  
Tadao Toda ◽  
Hiroaki Ishii ◽  
Tatsuhiko Niina
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Purity ◽  
Molecular Beam ◽  
High Resistivity

scholarly journals Исследование модифицированной структуры квантового каскадного лазера

2018 ◽  
Vol 52 (1) ◽  
pp. 133
Author(s):  
В.В. Мамутин ◽  
Н.А. Малеев ◽  
А.П. Васильев ◽  
Н.Д. Ильинская ◽  
Ю.М. Задиранов ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Plasma Etching ◽  
Molecular Beam ◽  
Quantum Cascade Lasers ◽  
High Resistivity ◽  
Preparation Process ◽  
High Quality ◽  
Quantum Cascade ◽  
Cascade Lasers

AbstractThe process of obtaining a modified structure for quantum cascade lasers is studied; this process includes growth using molecular-beam epitaxy, plasma etching, photolithography with the use of liquid etching, and the formation of special contacts for decreasing losses in the waveguide. The use of a special type of structure makes it possible, even without postgrowth overgrowth with a high-resistivity material, to attain parameters satisfying requirements to heterostructures in high-quality quantum cascade lasers at maximal simplification of the entire preparation process.

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