Growth by molecular beam epitaxy and characterization of high purity GaAs and AlGaAs

1983 ◽  
Vol 54 (12) ◽  
pp. 6982-6988 ◽  
Author(s):  
M. Heiblum ◽  
E. E. Mendez ◽  
L. Osterling
1982 ◽  
Vol 40 (6) ◽  
pp. 507-510 ◽  
Author(s):  
R. Dingle ◽  
C. Weisbuch ◽  
H. L. Störmer ◽  
H. Morkoç ◽  
A. Y. Cho

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.


2017 ◽  
Vol 9 (36) ◽  
pp. 30786-30796 ◽  
Author(s):  
Yoon-Ho Choi ◽  
Dong-Hyeok Lim ◽  
Jae-Hun Jeong ◽  
Dambi Park ◽  
Kwang-Sik Jeong ◽  
...  

1992 ◽  
Vol 71 (10) ◽  
pp. 4916-4919 ◽  
Author(s):  
S. H. Li ◽  
S. W. Chung ◽  
J. K. Rhee ◽  
P. K. Bhattacharya

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