Difference in light‐induced annealing behavior of deposition‐ and light‐induced defects in hydrogenated amorphous silicon

1993 ◽  
Vol 63 (14) ◽  
pp. 1948-1950 ◽  
Author(s):  
N. Hata ◽  
A. Matsuda
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Annealing Behavior ◽  
Induced Defects ◽  
Hydrogenated Amorphous

Kinetics of Light-Induced Deffect Formation and Annealing in Hydrogenated Amorphous Silicon Alloyed with Sulfur

1998 ◽  
Vol 507 ◽  
Author(s):  
Baojie Yan ◽  
Shenlin Chen ◽  
P. C. Taylor
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Spin Density ◽  
Hydrogenated Amorphous Silicon ◽  
Activation Energies ◽  
Annealing Behavior ◽  
Peak Energy ◽  
Induced Defects ◽  
Hydrogenated Amorphous ◽  
Kinetics Of

ABSTRACTThe creation and annealing kinetics of light-induced defects in a-SiSx:H are studied by ESR and LESR measurements. The dispersion of defect creation after prolonged illumination with white light is greater for a-SiSx:H than that for undoped a-Si:H. In addition, the saturated value of the dark spin density is slightly lower for a-SiSx:H than that for a-Si:H. The annealing behavior can be fitted with a Gaussian distribution of annealing activation energies as is the case for undoped a-Si:H. The incorporation of sulfur decreases the peak energy and increases the width of the distribution of activation energies. Light-soaking does not change the low temperature LESR spectrum and LESR spin density.

Role of the hydrogen in the light-induced defects in undoped hydrogenated amorphous silicon

1991 ◽  
pp. 265-268
Author(s):  
H. Labidi ◽  
K. Zellama ◽  
P. Germain ◽  
M. Astier ◽  
D. Lortigues ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Induced Defects ◽  
Hydrogenated Amorphous

Kinetics of Growth and Recovery of Light-Induced Defects Under High-Intensity Illumination

1992 ◽  
Vol 258 ◽  
Author(s):  
Masao Isomura ◽  
Sigurd Wagner
Keyword(s):  
Light Intensity ◽  
Amorphous Silicon ◽  
High Intensity ◽  
Hydrogenated Amorphous Silicon ◽  
Increased Sensitivity ◽  
Induced Defects ◽  
Hydrogenated Amorphous ◽  
Kinetics Of ◽  
Diffusion Of Hydrogen

ABSTRACTWe report a study of the rates of generation and of annealing of the light-induced defects in hydrogenated amorphous silicon (a-Si:H). The rates of generation are found to be sensitive to temperature when the light intensity is high. This increased sensitivity to temperature at high rates suggests that a temperature-activated process such as hydrogen motion controls the rates of generation more when they are high. The rate of annealing at 130°C is strongly accelerated by illumination, and depends strongly on the light intensity. This may be explained by the diffusion of hydrogen, accelerated by excess carriers.

Sign in / Sign up

Export Citation Format

Share Document