Correlation between background carrier concentration and x‐ray linewidth for InGaAs/InP grown by vapor phase epitaxy

1984 ◽  
Vol 44 (6) ◽  
pp. 615-617 ◽  
Author(s):  
A. T. Macrander ◽  
S. N. G. Chu ◽  
K. E. Strege ◽  
A. F. Bloemeke ◽  
W. D. Johnston
Keyword(s):  
Carrier Concentration ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
X Ray

High Resolution X-ray Diffraction and X-ray Topography Study of Gan on A12O3

1998 ◽  
Vol 512 ◽  
Author(s):  
J. Chaudhuri ◽  
M. Hooe Ng ◽  
D. D. Koleske ◽  
A. E. Wickenden ◽  
R. L. Henry
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Dislocation Density ◽  
Carrier Concentration ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Reduced Pressure ◽  
X Ray

ABSTRACTHigh resolution x-ray diffraction and x-ray topography study of GaN thin films, grown on sapphire (00.1) substrate by reduced pressure metalorganic vapor phase epitaxy under various conditions, were performed. An attempt was made to correlate the mobility in films with similar carrier concentration with the strain and dislocation density. X-ray topography revealed the defects present in the film.

Hg1−x−yCdxZnyTe: Growth, Properties and Potential for Infrared Detector Applications

1986 ◽  
Vol 90 ◽  
Author(s):  
Debra L. Kaiser ◽  
Piotr Becla
Keyword(s):  
Carrier Concentration ◽  
Vapor Phase ◽  
Infrared Detector ◽  
Vapor Phase Epitaxy ◽  
Diffusion Method ◽  
Depth Profiles ◽  
Growth Properties ◽  
Concentration Depth Profiles

ABSTRACTClose-spaced isothermal vapor phase epitaxy (VPE) was used to grow quaternary Hg1−x−yCdxZnyTe epillayers on Cd1−zZnzTe substrates. Composition, resistivity, and carrier concentration depth profiles were determined in the epilayers. p-n junctions were produced from material with appropriate properties using the Hg diffusion method. The junctions showed excellent I-V characteristics and high spectral detectivities.

In-situ X-ray studies of organometallic vapor phase epitaxy growth

1995 ◽  
Vol 30 (2-3) ◽  
pp. 99-108 ◽  
Author(s):  
P.H. Fuoss ◽  
D.W. Kisker ◽  
G.B. Stephenson ◽  
S. Brennan
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray

Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy

2014 ◽  
Vol 407 ◽  
pp. 68-73 ◽  
Author(s):  
Guangxu Ju ◽  
Shingo Fuchi ◽  
Masao Tabuchi ◽  
Hiroshi Amano ◽  
Yoshikazu Takeda
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
X Ray

High-resolution microbeam x-ray diffractometry applied to InGaAsP/InP layers grown by narrow-stripe selective metal-organic vapor phase epitaxy

2000 ◽  
Vol 77 (9) ◽  
pp. 1286-1288 ◽  
Author(s):  
Shigeru Kimura ◽  
Hidekazu Kimura ◽  
Kenji Kobayashi ◽  
Tomoaki Oohira ◽  
Koich Izumi ◽  
...  
Keyword(s):  
High Resolution ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
X Ray ◽  
Organic Vapor ◽  
Metal Organic ◽  
Narrow Stripe

Dynamical X-ray Rocking curve Simulations of InGaAsP/InP Double Heterostruciures using Abeles' Matrix Method

1986 ◽  
Vol 90 ◽  
Author(s):  
A. T. Macrander ◽  
B. M. Glasgow ◽  
E. R. Minami ◽  
R. F. Karlicek ◽  
D. L. Mitcham ◽  
...  
Keyword(s):  
Active Layer ◽  
Vapor Phase ◽  
Matrix Method ◽  
Light Emitting Diode ◽  
Vapor Phase Epitaxy ◽  
Diode Structure ◽  
Rocking Curve ◽  
Light Emitting ◽  
X Ray

ABSTRACTSimulated rocking curves for a light-emitting diode structure are presented. Results for a structure containing uniform layers are compared to rocking curve data for a wafer grown by vapor phase epitaxy (VPE), and we conclude from the comparison that the VPE wafer closely approached the hypothetical ideal assumed in the simulations. Simulations illustrating difficulties in analyses and the effects of a graded active layer are also presented.

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