Low‐temperature silicon epitaxy using low pressure chemical vapor deposition with and without plasma enhancement

1984 ◽  
Vol 44 (3) ◽  
pp. 346-348 ◽  
Author(s):  
T. J. Donahue ◽  
W. R. Burger ◽  
R. Reif
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silicon Epitaxy ◽  
Pressure Chemical ◽  
Plasma Enhancement

Low‐temperature epitaxial growth of silicon by low‐pressure chemical vapor deposition

1988 ◽  
Vol 52 (13) ◽  
pp. 1053-1055 ◽  
Author(s):  
D. Meakin ◽  
M. Stobbs ◽  
J. Stoemenos ◽  
N. A. Economou
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical
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