Silicon epitaxy at 650–800 °C using low‐pressure chemical vapor deposition both with and without plasma enhancement

T. J. Donahue; R. Reif

doi:10.1063/1.335418

Silicon epitaxy at 650–800 °C using low‐pressure chemical vapor deposition both with and without plasma enhancement

Journal of Applied Physics ◽

10.1063/1.335418 ◽

1985 ◽

Vol 57 (8) ◽

pp. 2757-2765 ◽

Cited By ~ 126

Author(s):

T. J. Donahue ◽

R. Reif

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Epitaxy ◽

Pressure Chemical ◽

Plasma Enhancement

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Low‐temperature silicon epitaxy using low pressure chemical vapor deposition with and without plasma enhancement

Applied Physics Letters ◽

10.1063/1.94754 ◽

1984 ◽

Vol 44 (3) ◽

pp. 346-348 ◽

Cited By ~ 28

Author(s):

T. J. Donahue ◽

W. R. Burger ◽

R. Reif

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Epitaxy ◽

Pressure Chemical ◽

Plasma Enhancement

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Summary Abstract: Comparative study of polycrystalline silicon thin films deposited by very low pressure chemical vapor deposition with and without plasma enhancement

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.574482 ◽

1987 ◽

Vol 5 (4) ◽

pp. 1903-1904 ◽

Cited By ~ 1

Author(s):

J.‐J. J. Hajjar ◽

R. Reif ◽

D. Adler

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Comparative Study ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Thin Films ◽

Pressure Chemical ◽

Plasma Enhancement

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Low Temperature Silicon Epitaxy Deposited by Very Low Pressure Chemical Vapor Deposition: III . Pattern Transfer

Journal of The Electrochemical Society ◽

10.1149/1.2108998 ◽

1986 ◽

Vol 133 (8) ◽

pp. 1701-1705 ◽

Cited By ~ 2

Author(s):

T. J. Donahue ◽

R. Reif

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Pattern Transfer ◽

Silicon Epitaxy ◽

Pressure Chemical

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Low Temperature Silicon Epitaxy Deposited by Very Low Pressure Chemical Vapor Deposition: I . Kinetics

Journal of The Electrochemical Society ◽

10.1149/1.2108995 ◽

1986 ◽

Vol 133 (8) ◽

pp. 1691-1697 ◽

Cited By ~ 37

Author(s):

T. J. Donahue ◽

R. Reif

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Epitaxy ◽

Pressure Chemical

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Structural and electrical properties of polycrystalline silicon films deposited by low pressure chemical vapor deposition with and without plasma enhancement

Journal of Electronic Materials ◽

10.1007/bf02659023 ◽

1986 ◽

Vol 15 (5) ◽

pp. 279-285 ◽

Cited By ~ 8

Author(s):

J. -J. Hajjar ◽

R. Reif ◽

D. Adler

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Structural And Electrical Properties ◽

Pressure Chemical ◽

Polycrystalline Silicon Films ◽

Plasma Enhancement

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Low Temperature Silicon Epitaxy Deposited by Very Low Pressure Chemical Vapor Deposition: II . Autodoping

Journal of The Electrochemical Society ◽

10.1149/1.2108996 ◽

1986 ◽

Vol 133 (8) ◽

pp. 1697-1701 ◽

Cited By ~ 5

Author(s):

T. J. Donahue ◽

R. Reif

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Epitaxy ◽

Pressure Chemical

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ChemInform Abstract: Low Temperature Silicon Epitaxy by Hot Wall Ultrahigh Vacuum/Low Pressure Chemical Vapor Deposition Techniques: Surface Optimization.

Chemischer Informationsdienst ◽

10.1002/chin.198640333 ◽

1986 ◽

Vol 17 (40) ◽

Author(s):

B. S. MEYERSON ◽

E. GANIN ◽

D. A. SMITH ◽

T. N. NGUYEN

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Ultrahigh Vacuum ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Epitaxy ◽

Pressure Chemical ◽

Surface Optimization ◽

Deposition Techniques

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Low Temperature Silicon Epitaxy by Hot Wall Ultrahigh Vacuum/Low Pressure Chemical Vapor Deposition Techniques: Surface Optimization

Journal of The Electrochemical Society ◽

10.1149/1.2108824 ◽

1986 ◽

Vol 133 (6) ◽

pp. 1232-1235 ◽

Cited By ~ 84

Author(s):

B. S. Meyerson ◽

E. Ganin ◽

D. A. Smith ◽

T. N. Nguyen

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Ultrahigh Vacuum ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Epitaxy ◽

Pressure Chemical ◽

Surface Optimization ◽

Deposition Techniques

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ChemInform Abstract: Low Temperature Silicon Epitaxy Deposited by Very Low Pressure Chemical Vapor Deposition.

Chemischer Informationsdienst ◽

10.1002/chin.198647379 ◽

1986 ◽

Vol 17 (47) ◽

Author(s):

T. J. DONAHUE ◽

R. REIF

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Epitaxy ◽

Pressure Chemical

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Silicon epitaxy on germanium using a SiH4 low-pressure chemical-vapor deposition process

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.583672 ◽

1987 ◽

Vol 5 (6) ◽

pp. 1551 ◽

Cited By ~ 3

Author(s):

Kiyohisa Fujinaga

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Deposition Process ◽

Low Pressure ◽

Chemical Vapor Deposition Process ◽

Silicon Epitaxy ◽

Pressure Chemical ◽

Vapor Deposition Process

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