Low Temperature Silicon Epitaxy Deposited by Very Low Pressure Chemical Vapor Deposition: I . Kinetics

T. J. Donahue; R. Reif

doi:10.1149/1.2108995

Low Temperature Silicon Epitaxy Deposited by Very Low Pressure Chemical Vapor Deposition: I . Kinetics

Journal of The Electrochemical Society ◽

10.1149/1.2108995 ◽

1986 ◽

Vol 133 (8) ◽

pp. 1691-1697 ◽

Cited By ~ 37

Author(s):

T. J. Donahue ◽

R. Reif

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Epitaxy ◽

Pressure Chemical

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Low Temperature Silicon Epitaxy Deposited by Very Low Pressure Chemical Vapor Deposition: III . Pattern Transfer

Journal of The Electrochemical Society ◽

10.1149/1.2108998 ◽

1986 ◽

Vol 133 (8) ◽

pp. 1701-1705 ◽

Cited By ~ 2

Author(s):

T. J. Donahue ◽

R. Reif

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Pattern Transfer ◽

Silicon Epitaxy ◽

Pressure Chemical

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Low Temperature Silicon Epitaxy Deposited by Very Low Pressure Chemical Vapor Deposition: II . Autodoping

Journal of The Electrochemical Society ◽

10.1149/1.2108996 ◽

1986 ◽

Vol 133 (8) ◽

pp. 1697-1701 ◽

Cited By ~ 5

Author(s):

T. J. Donahue ◽

R. Reif

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Epitaxy ◽

Pressure Chemical

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ChemInform Abstract: Low Temperature Silicon Epitaxy by Hot Wall Ultrahigh Vacuum/Low Pressure Chemical Vapor Deposition Techniques: Surface Optimization.

Chemischer Informationsdienst ◽

10.1002/chin.198640333 ◽

1986 ◽

Vol 17 (40) ◽

Author(s):

B. S. MEYERSON ◽

E. GANIN ◽

D. A. SMITH ◽

T. N. NGUYEN

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Ultrahigh Vacuum ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Epitaxy ◽

Pressure Chemical ◽

Surface Optimization ◽

Deposition Techniques

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Low Temperature Silicon Epitaxy by Hot Wall Ultrahigh Vacuum/Low Pressure Chemical Vapor Deposition Techniques: Surface Optimization

Journal of The Electrochemical Society ◽

10.1149/1.2108824 ◽

1986 ◽

Vol 133 (6) ◽

pp. 1232-1235 ◽

Cited By ~ 84

Author(s):

B. S. Meyerson ◽

E. Ganin ◽

D. A. Smith ◽

T. N. Nguyen

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Ultrahigh Vacuum ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Epitaxy ◽

Pressure Chemical ◽

Surface Optimization ◽

Deposition Techniques

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ChemInform Abstract: Low Temperature Silicon Epitaxy Deposited by Very Low Pressure Chemical Vapor Deposition.

Chemischer Informationsdienst ◽

10.1002/chin.198647379 ◽

1986 ◽

Vol 17 (47) ◽

Author(s):

T. J. DONAHUE ◽

R. REIF

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Epitaxy ◽

Pressure Chemical

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Low‐temperature silicon epitaxy using low pressure chemical vapor deposition with and without plasma enhancement

Applied Physics Letters ◽

10.1063/1.94754 ◽

1984 ◽

Vol 44 (3) ◽

pp. 346-348 ◽

Cited By ~ 28

Author(s):

T. J. Donahue ◽

W. R. Burger ◽

R. Reif

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Epitaxy ◽

Pressure Chemical ◽

Plasma Enhancement

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Low‐temperature epitaxial growth of silicon by low‐pressure chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.99208 ◽

1988 ◽

Vol 52 (13) ◽

pp. 1053-1055 ◽

Cited By ~ 12

Author(s):

D. Meakin ◽

M. Stobbs ◽

J. Stoemenos ◽

N. A. Economou

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Epitaxial Growth ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Pressure Chemical

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Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(100) by ultraclean low-pressure chemical vapor deposition

Applied Surface Science ◽

10.1016/j.apsusc.2008.02.132 ◽

2008 ◽

Vol 254 (19) ◽

pp. 6086-6089 ◽

Cited By ~ 10

Author(s):

Hiroki Tanno ◽

Masao Sakuraba ◽

Bernd Tillack ◽

Junichi Murota

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Epitaxial Growth ◽

Vapor Deposition ◽

Chemical Vapor ◽

Atomic Layer ◽

Low Pressure ◽

Pressure Chemical

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Erratum: Low‐temperature epitaxial growth of silicon by low‐pressure chemical vapor deposition [Appl. Phys. Lett.52, 1053 (1988)]

Applied Physics Letters ◽

10.1063/1.99660 ◽

1988 ◽

Vol 52 (17) ◽

pp. 1389-1391

Author(s):

D. Meakin ◽

M. Stobbs ◽

J. Stoemenos ◽

N. A. Economou

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Epitaxial Growth ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Pressure Chemical

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Low-temperature heteroepitaxial growth of SiGe on Si with low-pressure chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/0022-0248(93)90035-u ◽

1993 ◽

Vol 126 (2-3) ◽

pp. 285-292 ◽

Cited By ~ 3

Author(s):

K. Nakai ◽

M. Ozeki ◽

K. Nakajima

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Heteroepitaxial Growth ◽

Pressure Chemical

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