Study of the uniformity and stoichiometry of CoSi2films using Rutherford backscattering spectroscopy and scanning electron microscopy

1983 ◽  
Vol 43 (7) ◽  
pp. 660-662 ◽  
Author(s):  
Kouichirou Ishibashi ◽  
Seijiro Furukawa
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Scanning Electron

Thermal Conductivity of Boron Carbides

1987 ◽  
Vol 97 ◽  
Author(s):  
Marvin Moss
Keyword(s):  
Electron Microscopy ◽  
Thermal Conductivity ◽  
Scanning Electron Microscopy ◽  
Raman Spectroscopy ◽  
Temperature Dependence ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Theoretical Density ◽  
Increasing Temperature ◽  
Scanning Electron

ABSTRACTThe thermal conductivity, k, of boron carbides of various B/C ratios, two modes of preparation – hot pressed and carbothermic, and two isotopic variants of boron – 11B and normal boron 10.81B, was measured from 300 to 1023 K. The density and composition of the samples were reflected in the magnitude and temperature dependence of k, and were investigated further with scanning electron microscopy, Rutherford backscattering spectroscopy, and Raman spectroscopy. While lower than theoretical density in B4C reduces k, the characteristic monotonic decline of k with increasing temperature is retained. This k-vs.-T behavior distinguishes B4C from material with larger B/C ratios for which the temperature dependence is essentially nil.

Thermodynamic Constraints on Ion Beam Mixing of Metals on Insulators

1985 ◽  
Vol 45 ◽  
Author(s):  
G. C. Farlow ◽  
B. R. Appleton ◽  
L. A. Boatner ◽  
C. J. Mchargue ◽  
C. W. White ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Ion Beam ◽  
Metal Films ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Reaction Enthalpy ◽  
Ion Beam Mixing ◽  
Interfacial Mixing ◽  
Scanning Electron

ABSTRACTSeveral different insulating substrates were coated with various metal films and ion beam irradiated using either Xe or Kr ions. These were then examined by Rutherford backscattering spectroscopy and scanning electron microscopy to determine if interfacial mixing had taken place. These results were compared with the sign of the reaction enthalpy of the metal and substrate to test the proposition that metals mix on insulators if the reaction enthalpy is negative and do not mix if it is positive. The enthalpy rule is in general valid. Two exceptions were found: Cr on Si02 and Zr on Al203; however, these exceptions contain ambiguous features.Irradiation with a light, reactive ion was found to produce no mixing.

Laser Pulse Melting of Metals: Epitaxy and Allotropy

1980 ◽  
Vol 1 ◽  
Author(s):  
L. Buene ◽  
E. N. Kaufmann ◽  
C. M. Preece ◽  
C. W. Draper
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Surface Layer ◽  
High Temperature ◽  
Laser Pulse ◽  
Single Crystals ◽  
Laser Power ◽  
Rutherford Backscattering ◽  
Scanning Electron ◽  
Crystallographic Orientations

ABSTRACTLaser pulse melted single crystals of several metals have been examined by the Rutherford backscattering/channeling technique and with optical and scanning electron microscopy. Metals belonging to the three major structure groups; fcc (Ni, Pd, Rh); bcc(Mo, Nb, W, Fe); and hcp (Be, Ti, Re) have been studied at various laser power levels and in different crystallographic orientations. Of these cases, Be, Ti and Fe show high temperature allotropes which are expected to influence the character of the resolidified surface layer.

Thin-film reactions of Al with Co, Cr, Mo, Ta, Ti, and W

1989 ◽  
Vol 4 (4) ◽  
pp. 815-820 ◽  
Author(s):  
E. G. Colgan ◽  
J. W. Mayer
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Phase Diagrams ◽  
Refractory Metals ◽  
Rutherford Backscattering ◽  
Phase Identification ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

The thin-film interactions of Al with refractory metals (Co, Cr, Mo, Ta, Ti, and W) have been investigated. The composition and thickness of the reacted aluminide layers were determined by Rutherford backscattering and phase identification was made by x-ray diffraction. Scanning electron microscopy was used to examine the lateral uniformity. The initial aluminide phases to grow are the Al-rich phases: Co2Al9, Cr2Al13, MoAl12, TaAl3, TiAl3, and WAI12. These are the most Al-rich phases on the phase diagrams. The reaction temperatures varied between 350 and 525 °C.

Raman Scattering from Rapid Thermally Annealed Tungsten Silicide

1987 ◽  
Vol 92 ◽  
Author(s):  
Samhita Dasgupta Samhita Dasgupta ◽  
Sandeep Kumar ◽  
Howard E. Jackson ◽  
Joseph T. Boyd
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Raman Scattering ◽  
Rutherford Backscattering ◽  
Scattering Data ◽  
Silicon Substrates ◽  
Tungsten Silicide ◽  
Resistivity Measurements ◽  
Sputter Deposited ◽  
Scanning Electron

ABSTRACTRaman Scattering as a technique for studying the formation of tungsten silicide is presented. The tungsten silicide films were formed by rapid thermally annealing tungsten films that were sputter deposited on silicon substrates. The Raman scattering data is correlated with data from resistivity measurements, Auger and Rutherford Backscattering measurements, and scanning electron microscopy.

Chemical Beam Epitaxy of GaP Using Triethylgallium and Tertiarybutylphosphine

1992 ◽  
Vol 282 ◽  
Author(s):  
James T. Kelliher ◽  
Klaus J. Bachmann
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Auger Electron ◽  
Rutherford Backscattering ◽  
Chemical Beam Epitaxy ◽  
X Ray ◽  
Phosphorus Source ◽  
Metalorganic Chemical ◽  
Scanning Electron

ABSTRACTIn this paper we report the growth of GaP/Si heterostructures by metalorganic chemical beam epitaxy (MOCBE), including information on a MOCBE system custom built for this work. The gallium source was triethylgallium and the phosphorus source was tertiarybutylphosphine. The range for GaP epitaxy is 260 <T< 375°C. Methods of characterization included scanning electron microscopy (SEM), Auger electron (AES), X-ray photoelectron (XPS) and Rutherford backscattering (RBS) spectroscopies.

Epitaxial Growth Of Nickel and Cobalt Germanides On Germanium

1987 ◽  
Vol 91 ◽  
Author(s):  
Y.F. Hsieh ◽  
L.J. Chen ◽  
E.D. Marshall ◽  
S.S. Lau
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Epitaxial Growth ◽  
Rutherford Backscattering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glancing Angle ◽  
Scanning Electron

ABSTRACTTransmission and scanning electron microscopy, Rutherford backscattering-channeling and Read camera glancing angle x-ray diffraction techniques have been applied to study the epitaxial growth of nickel and cobalt germanides on germanium.NiGe, Co5Ge7 and CoGe2 were found to grow epitaxially on both (001) and (111)Ge. More extensive epitaxy on (111)Ge is correlated with better lattice matches at the germanide/Ge interfaces than those on (001)Ge for these epitaxial germanides.

Pathogenesis of Human Hair Defects

1974 ◽  
Vol 32 ◽  
pp. 12-13
Author(s):  
P.S. Porter ◽  
T. Aoyagi ◽  
R. Matta
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Human Hair ◽  
Standard Techniques ◽  
Scanning Electron

Using standard techniques of scanning electron microscopy (SEM), over 1000 human hair defects have been studied. In several of the defects, the pathogenesis of the abnormality has been clarified using these techniques. It is the purpose of this paper to present several distinct morphologic abnormalities of hair and to discuss their pathogenesis as elucidated through techniques of scanning electron microscopy.

Ultrastructural Analysis of the Salivary Glands of Gromphadorhina Portentosa (Schaum)

1977 ◽  
Vol 35 ◽  
pp. 638-639
Author(s):  
P.J. Dailey
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Salivary Glands ◽  
Secretory Vesicles ◽  
The Past ◽  
Transmission Electron ◽  
Means Of Transmission ◽  
Gromphadorhina Portentosa ◽  
Scanning Electron ◽  
Topographical Relief

The structure of insect salivary glands has been extensively investigated during the past decade; however, none have attempted scanning electron microscopy (SEM) in ultrastructural examinations of these secretory organs. This study correlates fine structure by means of SEM cryofractography with that of thin-sectioned epoxy embedded material observed by means of transmission electron microscopy (TEM).Salivary glands of Gromphadorhina portentosa were excised and immediately submerged in cold (4°C) paraformaldehyde-glutaraldehyde fixative1 for 2 hr, washed and post-fixed in 1 per cent 0s04 in phosphosphate buffer (4°C for 2 hr). After ethanolic dehydration half of the samples were embedded in Epon 812 for TEM and half cryofractured and subsequently critical point dried for SEM. Dried specimens were mounted on aluminum stubs and coated with approximately 150 Å of gold in a cold sputtering apparatus.Figure 1 shows a cryofractured plane through a salivary acinus revealing topographical relief of secretory vesicles.

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