X‐ray photoelectron spectroscopic study of the oxide removal mechanism of GaAs (100) molecular beam epitaxial substrates ininsituheating

1983 ◽  
Vol 42 (3) ◽  
pp. 293-295 ◽  
Author(s):  
R. P. Vasquez ◽  
B. F. Lewis ◽  
F. J. Grunthaner
Keyword(s):  
Spectroscopic Study ◽  
Molecular Beam ◽  
Removal Mechanism ◽  
X Ray ◽  
Molecular Beam Epitaxial ◽  
Oxide Removal

Molecular Beam Epitaxial Growth of Nonpolar a-plane InN/ GaN Heterostructures

2012 ◽  
Vol 1396 ◽  
Author(s):  
Mohana K. Rajpalke ◽  
Thirumaleshwara N. Bhat ◽  
Basanta Roul ◽  
Mahesh Kumar ◽  
S. B. Krupanidhi
Keyword(s):  
Schottky Barrier ◽  
Molecular Beam ◽  
Schottky Barrier Height ◽  
High Energy ◽  
Scanning Electron Micrographs ◽  
X Ray Diffraction ◽  
X Ray ◽  
Molecular Beam Epitaxial ◽  
Diffraction Patterns ◽  
Molecular Beam Epitaxial Growth

ABSTRACTNonpolar a-plane InN/GaN heterostructures were grown by plasma assisted molecular beam epitaxy. The growth of nonpolar a- plane InN / GaN heterostructures were confirmed by high resolution x-ray diffraction study. Reflection high energy electron diffraction patterns show the reasonably smooth surface of a-plane GaN and island-like growth for nonpolar a-plane InN film, which is further confirmed by scanning electron micrographs. An absorption edge in the optical spectra has the energy of 0.74 eV, showing blueshifts from the fundamental band gap of 0.7 eV. The rectifying behavior of the I-V curve indicates the existence of Schottky barrier at the InN and GaN interface. The Schottky barrier height (φb) and the ideality factor (η) for the InN/GaN heterostructures found to be 0.58 eV and 2.05 respectively.

scholarly journals In situ x-ray and electron scattering studies of oxide molecular beam epitaxial growth

APL Materials ◽  
2020 ◽  
Vol 8 (10) ◽  
pp. 101107
Author(s):  
Xi Yan ◽  
Friederike Wrobel ◽  
Yan Li ◽  
Hua Zhou ◽  
Huan-hua Wang ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Electron Scattering ◽  
Molecular Beam ◽  
X Ray ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Interfacial structure of molecular beam epitaxial grown cubic-GaN films on GaAs(001) probed by x-ray gazing-angle specular reflection

1999 ◽  
Vol 74 (20) ◽  
pp. 2981-2983 ◽  
Author(s):  
J. H. Li ◽  
H. Chen ◽  
L. C. Cai ◽  
S. F. Cui ◽  
W. X. Yu ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Specular Reflection ◽  
Interfacial Structure ◽  
X Ray ◽  
Molecular Beam Epitaxial ◽  
Cubic Gan

scholarly journals Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by x-ray diffraction

AIP Advances ◽  
2016 ◽  
Vol 6 (3) ◽  
pp. 035303 ◽  
Author(s):  
Hidetoshi Suzuki ◽  
Yuka Nakata ◽  
Masamitu Takahasi ◽  
Kazuma Ikeda ◽  
Yoshio Ohshita ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Real Time ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Molecular Beam Epitaxial ◽  
Twin Formation ◽  
Time Observation ◽  
Molecular Beam Epitaxial Growth ◽  
Real Time Observation

Molecular Beam Epitaxy Study of InAs/GaSb Heteroepitaxy on The (111)A and (111)B Orientations

1992 ◽  
Vol 263 ◽  
Author(s):  
J. A. Dura ◽  
J. T. Zborowski ◽  
T. D. Golding
Keyword(s):  
Molecular Beam ◽  
High Energy ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Group V ◽  
X Ray ◽  
Molecular Beam Epitaxial ◽  
Wide Range ◽  
Molecular Beam Epitaxial Growth ◽  
Secondary Ion

ABSTRACTWe have investigated the molecular beam epitaxial growth of homoepitaxial InAs and GaSb and InAs/GaSb heterostructures on both the (111)A and (111)B orientations. Our studies have found that high quality GaSb epilayers can be grown on both the (111)A and (111l)B orientations over a wide range of growth temperatures and flux ratios. Reflection high energy electron diffr-action phase diagrams for GaSb [111[ are presented. InAs/GaSb heterostructures, simultaneously grown on (11l)A and (111)B orientations, have been investigated by secondary ion mass spectroscopy depth profiles and double crystal x-ray diffraction. Unintentional incorporation of the ‘second’ group-V element is found to be approximately three times greater in the (111)A orientation than in the (111)B for both species.

Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction

2015 ◽  
Vol 118 (18) ◽  
pp. 185303 ◽  
Author(s):  
Kenichi Shimomura ◽  
Hidetoshi Suzuki ◽  
Takuo Sasaki ◽  
Masamitu Takahasi ◽  
Yoshio Ohshita ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Epitaxial Growth ◽  
Direct Observation ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
Inas Quantum Dots ◽  
X Ray ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

X-ray reflectivity measurement of δ-doped erbium profile in silicon molecular-beam epitaxial layer

1999 ◽  
Vol 59 (16) ◽  
pp. 10697-10700 ◽  
Author(s):  
Jun Wan ◽  
Z. M. Jiang ◽  
D. W. Gong ◽  
Y. L. Fan ◽  
C. Sheng ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Molecular Beam ◽  
Reflectivity Measurement ◽  
X Ray ◽  
Molecular Beam Epitaxial
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