Interfacial structure of molecular beam epitaxial grown cubic-GaN films on GaAs(001) probed by x-ray gazing-angle specular reflection

1999 ◽  
Vol 74 (20) ◽  
pp. 2981-2983 ◽  
Author(s):  
J. H. Li ◽  
H. Chen ◽  
L. C. Cai ◽  
S. F. Cui ◽  
W. X. Yu ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Specular Reflection ◽  
Interfacial Structure ◽  
X Ray ◽  
Molecular Beam Epitaxial ◽  
Cubic Gan

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

Molecular Beam Epitaxial Growth of Nonpolar a-plane InN/ GaN Heterostructures

2012 ◽  
Vol 1396 ◽  
Author(s):  
Mohana K. Rajpalke ◽  
Thirumaleshwara N. Bhat ◽  
Basanta Roul ◽  
Mahesh Kumar ◽  
S. B. Krupanidhi
Keyword(s):  
Schottky Barrier ◽  
Molecular Beam ◽  
Schottky Barrier Height ◽  
High Energy ◽  
Scanning Electron Micrographs ◽  
X Ray Diffraction ◽  
X Ray ◽  
Molecular Beam Epitaxial ◽  
Diffraction Patterns ◽  
Molecular Beam Epitaxial Growth

ABSTRACTNonpolar a-plane InN/GaN heterostructures were grown by plasma assisted molecular beam epitaxy. The growth of nonpolar a- plane InN / GaN heterostructures were confirmed by high resolution x-ray diffraction study. Reflection high energy electron diffraction patterns show the reasonably smooth surface of a-plane GaN and island-like growth for nonpolar a-plane InN film, which is further confirmed by scanning electron micrographs. An absorption edge in the optical spectra has the energy of 0.74 eV, showing blueshifts from the fundamental band gap of 0.7 eV. The rectifying behavior of the I-V curve indicates the existence of Schottky barrier at the InN and GaN interface. The Schottky barrier height (φb) and the ideality factor (η) for the InN/GaN heterostructures found to be 0.58 eV and 2.05 respectively.

Arsenic surfactant effects and arsenic mediated molecular beam epitaxial growth for cubic GaN

1998 ◽  
Vol 72 (23) ◽  
pp. 3056-3058 ◽  
Author(s):  
H. Okumura ◽  
H. Hamaguchi ◽  
G. Feuillet ◽  
Y. Ishida ◽  
S. Yoshida
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Cubic Gan ◽  
Molecular Beam Epitaxial Growth ◽  
Surfactant Effects

scholarly journals In situ x-ray and electron scattering studies of oxide molecular beam epitaxial growth

APL Materials ◽  
2020 ◽  
Vol 8 (10) ◽  
pp. 101107
Author(s):  
Xi Yan ◽  
Friederike Wrobel ◽  
Yan Li ◽  
Hua Zhou ◽  
Huan-hua Wang ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Electron Scattering ◽  
Molecular Beam ◽  
X Ray ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular Beam Epitaxy of Cubic Group III-Nitrides on Free-Standing 3C-SiC Substrates

2006 ◽  
Vol 527-529 ◽  
pp. 1489-1492 ◽  
Author(s):  
Donat J. As ◽  
S. Potthast ◽  
J. Schörmann ◽  
S.F. Li ◽  
K. Lischka ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
Group Iii Nitrides ◽  
Growth Conditions ◽  
Multiple Quantum ◽  
Free Standing ◽  
X Ray ◽  
Group Iii ◽  
Cubic Gan

Cubic GaN, AlxGa1-xN/GaN and InyGa1-yN/GaN multiple quantum well (MQW) layers were grown by plasma assisted molecular beam epitaxy on 200 &m thick free standing 3C-SiC substrates. The influence of the surface roughness of the 3C-SiC substrates and the influence of metal coverage during growth are discussed. Optimum growth conditions of c-III nitrides exist, when a one monolayer Ga coverage is formed at the growing surface. The improvement of the structural properties of cubic III-nitride layers and multilayers grown on 3C-SiC substrates is demonstrated by 1 μm thick c-GaN layers with a minimum x-ray rocking curve width of 16 arcmin, and by c-AlGaN/GaN and c-InGaN/GaN MQWs which showed up to five satellite peaks in X-ray diffraction, respectively.

scholarly journals Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by x-ray diffraction

AIP Advances ◽  
2016 ◽  
Vol 6 (3) ◽  
pp. 035303 ◽  
Author(s):  
Hidetoshi Suzuki ◽  
Yuka Nakata ◽  
Masamitu Takahasi ◽  
Kazuma Ikeda ◽  
Yoshio Ohshita ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Real Time ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Molecular Beam Epitaxial ◽  
Twin Formation ◽  
Time Observation ◽  
Molecular Beam Epitaxial Growth ◽  
Real Time Observation
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