Pulsed excimer laser annealing of ion implanted silicon: Characterization and solar cell fabrication

1982 ◽  
Vol 41 (10) ◽  
pp. 938-940 ◽  
Author(s):  
D. H. Lowndes ◽  
J. W. Cleland ◽  
W. H. Christie ◽  
R. E. Eby ◽  
G. E. Jellison ◽  
...  
Keyword(s):  
Solar Cell ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Solar Cell Fabrication ◽  
Cell Fabrication ◽  
Ion Implanted

Characterization of excimer laser annealing of ion implanted Si

1982 ◽  
Vol 3 (10) ◽  
pp. 280-283 ◽  
Author(s):  
R.T. Young ◽  
G.A. van der Leeden ◽  
J. Narayan ◽  
W.H. Christie ◽  
R.F. Wood ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Ion Implanted

Long-pulse duration excimer laser annealing of Al+ ion implanted 4H-SiC for pn junction formation

2003 ◽  
Vol 208-209 ◽  
pp. 292-297 ◽  
Author(s):  
C. Dutto ◽  
E. Fogarassy ◽  
D. Mathiot ◽  
D. Muller ◽  
P. Kern ◽  
...  
Keyword(s):  
Pulse Duration ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Pn Junction ◽  
Junction Formation ◽  
Long Pulse ◽  
Ion Implanted

Lateral Solid-Phase Recrystallization from the Crystal Seed Selectively Formed by Excimer Laser Annealing in Ge-Ion-Implanted Amorphous Silicon Films

2000 ◽  
Vol 39 (Part 1, No. 9A) ◽  
pp. 5063-5068 ◽  
Author(s):  
Jin-Wook Seo ◽  
Satoru Akiyama ◽  
Yoichiro Aya ◽  
Tomoyuki Nohda ◽  
Hiroki Hamada ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Solid Phase ◽  
Silicon Films ◽  
Excimer Laser Annealing ◽  
Phase Recrystallization ◽  
Crystal Seed ◽  
Ion Implanted

Semiconductor Processing with Excimer Lasers: An Overview

1983 ◽  
Vol 23 ◽  
Author(s):  
R. T. Young
Keyword(s):  
Solar Cell ◽  
Optical Lithography ◽  
Excimer Lasers ◽  
Present Level ◽  
Semiconductor Processing ◽  
Solar Cell Fabrication ◽  
Photochemical Processing ◽  
Cell Fabrication ◽  
Ion Implanted

ABSTRACTThe present level of development of excimer lasers, as it relates to semiconductor processing, and the advantages of these lasers for such processing, are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers are presented. Major applications in the area of solar cell fabrication, siliconon-sapphire technology, laser photochemical processing, and submicron optical lithography are outlined and discussed.

Excimer laser annealing of ion‐implanted silicon

1984 ◽  
Vol 55 (4) ◽  
pp. 1125-1130 ◽  
Author(s):  
J. Narayan ◽  
O. W. Holland ◽  
C. W. White ◽  
R. T. Young
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Ion Implanted

Pulsed KrF excimer laser annealing of silicon solar cell

2002 ◽  
Vol 74 (1-4) ◽  
pp. 289-294 ◽  
Author(s):  
H. Azuma ◽  
A. Takeuchi ◽  
T. Ito ◽  
H. Fukushima ◽  
T. Motohiro ◽  
...  
Keyword(s):  
Solar Cell ◽  
Excimer Laser ◽  
Silicon Solar Cell ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Krf Excimer Laser
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