A surface‐acoustic wave/metal‐oxide‐silicon field‐effect transistor memory correlator

1981 ◽  
Vol 38 (11) ◽  
pp. 886-887 ◽  
Author(s):  
D. L. Smythe ◽  
R. W. Ralston
Keyword(s):  
Acoustic Wave ◽  
Metal Oxide ◽  
Surface Acoustic Wave ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Metal Oxide Silicon

Frequency-shift keyed generation with an optically controlled GaAs field-effect transistor in a surface-acoustic-wave oscillator circuit

1987 ◽  
Vol 65 (8) ◽  
pp. 929-936
Author(s):  
O. Berolo
Keyword(s):  
Acoustic Wave ◽  
Frequency Shift ◽  
Surface Acoustic Wave ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Open Circuit ◽  
Low Noise ◽  
Optical Modulator ◽  
Oscillator Circuit ◽  
Effect Transistor

A prototype circuit for potential optical integration was developed and evaluated for the generation of frequency-shift keyed (FSK) signals by simultaneously exploiting surface-acoustic wave (SAW) technology and the optical response of the GaAs field-effect transistor (FET).A SAW delay line to be utilized in the feedback path of an oscillator circuit was designed for operation at the fundamental frequency of 111 MHz and operated at its 12th harmonic (1.33 GHz). A low-noise FET was incorporated into the circuit in series with the SAW delay, and a low-power He:Ne laser was focussed through an optical modulator onto the FET structure. The gate bias, which controls the phase shift in the feedback loop of the oscillator, was applied via the open-circuit photovoltage induced at the Schottky-barrier junction of the FET.The optical modulator was driven by a pseudorandom bit generator to obtain FSK generation by the oscillator circuit. Results of the frequency spectrum of the oscillator signal as a function of bit rate and light intensity on the FET were obtained. The successful performance of the circuit indicated that integration of all these elements on GaAs would yield a useful device for FSK signal generation.Un prototype de circuit pour intégration optique potentielle a été développé et évalué pour la génération de signaux FSK (frequency-shift keyed), en exploitant simultanéement la technologie des ondes acoustiques de surface et la réponse optique du transistor GaAs à effet de champ.

Quantum Dot Made in Metal Oxide Silicon-Nanowire Field Effect Transistor Working at Room Temperature.

Nano Letters ◽  
2015 ◽  
Vol 15 (5) ◽  
pp. 2958-2964 ◽  
Author(s):  
Romain Lavieville ◽  
François Triozon ◽  
Sylvain Barraud ◽  
Andrea Corna ◽  
Xavier Jehl ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Metal Oxide ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Effect Transistor ◽  
Metal Oxide Silicon ◽  
Made In

Substrate current enhancement in 65 nm metal-oxide-silicon field-effect transistor under external mechanical stress

2009 ◽  
Vol 517 (5) ◽  
pp. 1715-1718 ◽  
Author(s):  
Y.J. Kuo ◽  
T.C. Chang ◽  
P.H. Yeh ◽  
S.C. Chen ◽  
C.H. Dai ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Mechanical Stress ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Substrate Current ◽  
Effect Transistor ◽  
Metal Oxide Silicon

Integrated surface acoustic wave/field‐effect transistor high‐speed analog memory

1983 ◽  
Vol 42 (12) ◽  
pp. 1015-1017 ◽  
Author(s):  
J. B. Green ◽  
G. S. Kino ◽  
J. T. Walker ◽  
J. D. Shott
Keyword(s):  
Acoustic Wave ◽  
Wave Field ◽  
Surface Acoustic Wave ◽  
Field Effect ◽  
High Speed ◽  
Field Effect Transistor ◽  
Analog Memory ◽  
Effect Transistor

A metal‐oxide‐silicon field‐effect transistor made by means of solid‐phase doping

1989 ◽  
Vol 65 (11) ◽  
pp. 4435-4437
Author(s):  
S. F. Gong ◽  
H. T. G. Hentzell ◽  
A. Robertsson ◽  
J. Strandberg ◽  
J. Hagel
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Solid Phase ◽  
Effect Transistor ◽  
Metal Oxide Silicon
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