Nanoprecipitation resulting from the decomposition of supersaturated solid solutions in the tracks of swift heavy ions

2004 ◽  
Vol 49 (10) ◽  
pp. 1308-1312
Author(s):  
D. N. Korolev ◽  
A. E. Volkov
Keyword(s):  
Solid Solutions ◽  
Heavy Ions ◽  
Swift Heavy Ions ◽  
Supersaturated Solid Solutions

scholarly journals Unravelling the secrets of the resistance of GaN to strongly ionising radiation

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Miguel C. Sequeira ◽  
Jean-Gabriel Mattei ◽  
Henrique Vazquez ◽  
Flyura Djurabekova ◽  
Kai Nordlund ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Ionising Radiation ◽  
Atomistic Simulations ◽  
Extended Defects ◽  
Swift Heavy Ions ◽  
High Fluences ◽  
Radiation Resistant ◽  
Simulation And Experiment ◽  
Underlying Mechanisms ◽  
Radiation Hard

AbstractGaN is the most promising upgrade to the traditional Si-based radiation-hard technologies. However, the underlying mechanisms driving its resistance are unclear, especially for strongly ionising radiation. Here, we use swift heavy ions to show that a strong recrystallisation effect induced by the ions is the key mechanism behind the observed resistance. We use atomistic simulations to examine and predict the damage evolution. These show that the recrystallisation lowers the expected damage levels significantly and has strong implications when studying high fluences for which numerous overlaps occur. Moreover, the simulations reveal structures such as point and extended defects, density gradients and voids with excellent agreement between simulation and experiment. We expect that the developed modelling scheme will contribute to improving the design and test of future radiation-resistant GaN-based devices.

Metastable Solid Solutions of Impurities in Silicon

1981 ◽  
Vol 7 ◽  
Author(s):  
J. S. Williams ◽  
K. T. Short
Keyword(s):  
High Resolution ◽  
Solid Solutions ◽  
Impurity Concentration ◽  
Rutherford Backscattering ◽  
Equilibrium Solubility ◽  
Furnace Annealing ◽  
Strain Effects ◽  
Crystal Boundary ◽  
Silicon Lattice ◽  
Supersaturated Solid Solutions

ABSTRACTHigh resolution Rutherford backscattering and channeling techniques have been used to investigate the formation and stability of supersaturated solid solutions of As, Sb, In, Pb, Tℓ and Bi implants in (100) silicon. In all cases nearsubstitutional solid solubilities far exceeding maximum equilibrium solubility limits can be achieved by furnace annealing at temperatures ≤ 600°C. Details of the recrystallisation process indicate that the maximum impurity concentration which can be incorporated onto silicon lattice sites may be controlled by impurity size and associated strain effects at the amorphous-crystal boundary during epitaxial regrowth.

scholarly journals Polymers under Ionizing Radiations: the Specificity of Swift Heavy Ions

2016 ◽  
Vol 115 ◽  
pp. 02003
Author(s):  
Yvette Ngono-Ravache ◽  
Muriel Ferry ◽  
Stéphane Esnouf ◽  
Emmanuel Balanzat
Keyword(s):  
Heavy Ions ◽  
Swift Heavy Ions ◽  
Ionizing Radiations
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