Metastable Solid Solutions of Impurities in Silicon

1981 ◽  
Vol 7 ◽  
Author(s):  
J. S. Williams ◽  
K. T. Short
Keyword(s):  
High Resolution ◽  
Solid Solutions ◽  
Impurity Concentration ◽  
Rutherford Backscattering ◽  
Equilibrium Solubility ◽  
Furnace Annealing ◽  
Strain Effects ◽  
Crystal Boundary ◽  
Silicon Lattice ◽  
Supersaturated Solid Solutions

ABSTRACTHigh resolution Rutherford backscattering and channeling techniques have been used to investigate the formation and stability of supersaturated solid solutions of As, Sb, In, Pb, Tℓ and Bi implants in (100) silicon. In all cases nearsubstitutional solid solubilities far exceeding maximum equilibrium solubility limits can be achieved by furnace annealing at temperatures ≤ 600°C. Details of the recrystallisation process indicate that the maximum impurity concentration which can be incorporated onto silicon lattice sites may be controlled by impurity size and associated strain effects at the amorphous-crystal boundary during epitaxial regrowth.

Low Density Titanium Alloys by Non-Equilibrium Processing.

1995 ◽  
Vol 400 ◽  
Author(s):  
D.M.J. Wilkes ◽  
P.S. Goodwin ◽  
C.M. Ward-Close ◽  
K. Bagnall ◽  
J. Steeds
Keyword(s):  
Solid Solution ◽  
High Resolution ◽  
Solid Solutions ◽  
Lattice Parameter ◽  
Argon Atmosphere ◽  
Low Density ◽  
Equilibrium Solubility ◽  
High Resolution Tem ◽  
High Vapour Pressure ◽  
Clean Atmosphere

AbstractHigh levels of Mg solid solution in Ti have been achieved by mechanical alloying in a clean atmosphere. The equilibrium solubility of magnesium in titanium is very low and processing of these alloys by conventional routes is not possible due to the high vapour pressure of Mg and alloys of Ti and Mg have only been previously achieved by vapour quenching.Contamination during milling was avoided by processing under a high purity argon atmosphere in sealed vials. Lattice parameter measurements and SEM observations suggested that complete solid solutions were achieved in alloys up to 24wt% Mg after 48h milling. For one alloy this was confirmed by high resolution TEM which showed extremely fine Ti grains in which Mg was homogeneously distributed with no clustering or precipitation.

Structure and Properties of Single Crystal Al2O3 Implanted with Chromium and Zirconium

1981 ◽  
Vol 7 ◽  
Author(s):  
C. J. Mchargue ◽  
H. Naramoto ◽  
B. R. Appleton ◽  
C. W. White ◽  
J. M. Williams
Keyword(s):  
Fracture Toughness ◽  
Single Crystal ◽  
Single Crystals ◽  
Solid Solutions ◽  
Rutherford Backscattering ◽  
Structure And Properties ◽  
Indentation Fracture ◽  
Surface Layers ◽  
Indentation Fracture Toughness

ABSTRACTSingle crystals of Al2O3 were implanted with chromium and zirconium to fluences of 1 × 1016 to 1 × 1017 ions cm−2. Rutherford backscattering-channeling studies showed the surface layers to be damaged but crystalline with the implanted ions randomly distributed. The microhardness and indentation fracture toughness were higher for the random solutions than for conventionally formed solid solutions. Changes in structure and properties caused by annealing in air at temperatures up to 1800°C were studied.

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