Minority carrier diffusion length measurements in CdTe by a photocurrent technique

A. Lastras‐Martínez; P. M. Raccah; R. Triboulet

doi:10.1063/1.91510

Minority carrier diffusion length measurements in CdTe by a photocurrent technique

Applied Physics Letters ◽

10.1063/1.91510 ◽

1980 ◽

Vol 36 (6) ◽

pp. 469-471 ◽

Cited By ~ 26

Author(s):

A. Lastras‐Martínez ◽

P. M. Raccah ◽

R. Triboulet

Keyword(s):

Minority Carrier ◽

Diffusion Length ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Length Measurements

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Comparison of minority carrier diffusion length measurements in silicon solar cells by the photo-induced open-circuit voltage decay (OCVD) with different excitation sources

Renewable Energy ◽

10.1016/s0960-1481(99)00089-0 ◽

2000 ◽

Vol 20 (1) ◽

pp. 65-74 ◽

Cited By ~ 15

Author(s):

Ulrich Stutenbaeumer ◽

Elias Lewetegn

Keyword(s):

Solar Cells ◽

Open Circuit Voltage ◽

Minority Carrier ◽

Diffusion Length ◽

Open Circuit ◽

Silicon Solar Cells ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Voltage Decay ◽

Length Measurements

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Comparison of minority‐carrier diffusion length measurements in silicon by the photoconductive decay and surface photovoltage methods

Journal of Applied Physics ◽

10.1063/1.340155 ◽

1988 ◽

Vol 63 (9) ◽

pp. 4561-4567 ◽

Cited By ~ 25

Author(s):

Müzeyyen Saritas ◽

Harry D. McKell

Keyword(s):

Minority Carrier ◽

Diffusion Length ◽

Surface Photovoltage ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Photoconductive Decay ◽

Length Measurements

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MINORITY-CARRIER DIFFUSION LENGTH : MEASUREMENTS BY EBIC, CONNECTION TO MATERIALS MICROSTRUCTURE AND RELATION TO DEVICE PERFORMANCE

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1989603 ◽

1989 ◽

Vol 50 (C6) ◽

pp. C6-31-C6-46 ◽

Cited By ~ 1

Author(s):

M. KITTLER ◽

W. SEIFERT

Keyword(s):

Minority Carrier ◽

Diffusion Length ◽

Device Performance ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Length Measurements

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Evaluation of Silicon Optical Absorption Data for Use in Minority‐Carrier‐Diffusion‐Length Measurements by the SPV Method

Journal of The Electrochemical Society ◽

10.1149/1.2113709 ◽

1985 ◽

Vol 132 (12) ◽

pp. 2992-2997 ◽

Cited By ~ 27

Author(s):

Edward S. Nartowitz ◽

Alvin M. Goodman

Keyword(s):

Optical Absorption ◽

Minority Carrier ◽

Diffusion Length ◽

Absorption Data ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Length Measurements

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Minority carrier diffusion length measurements in 6H–SiC

Journal of Applied Physics ◽

10.1063/1.1853501 ◽

2005 ◽

Vol 97 (5) ◽

pp. 053703 ◽

Cited By ~ 18

Author(s):

Alexander Y. Polyakov ◽

Qiang Li ◽

Sung Wook Huh ◽

Marek Skowronski ◽

Olena Lopatiuk ◽

...

Keyword(s):

Minority Carrier ◽

Diffusion Length ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Length Measurements

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Refinements in the determination of minority‐carrier diffusion length measurements of polycrystalline silicon materials by the surface photovoltage method

Journal of Applied Physics ◽

10.1063/1.339330 ◽

1987 ◽

Vol 62 (8) ◽

pp. 3249-3252 ◽

Cited By ~ 6

Author(s):

Ruyue Yan ◽

Franklin F. Y. Wang ◽

Reed R. Corderman ◽

Chandra P. Khattak ◽

Martin H. Leipold

Keyword(s):

Polycrystalline Silicon ◽

Minority Carrier ◽

Diffusion Length ◽

Surface Photovoltage ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Length Measurements ◽

Silicon Materials

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Minority carrier diffusion length measurements in solar cells by electron beam induced current

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) ◽

10.1109/pvsc.2015.7356036 ◽

2015 ◽

Cited By ~ 2

Author(s):

Sergey I. Maximenko ◽

Robert J. Walters

Keyword(s):

Electron Beam ◽

Solar Cells ◽

Minority Carrier ◽

Diffusion Length ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Length Measurements ◽

Electron Beam Induced Current

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Minority carrier diffusion length measurements of semiconductors using a multiwavelength laser SQUID microscope

IEEE Transactions on Applied Superconductivity ◽

10.1109/tasc.2003.813690 ◽

2003 ◽

Vol 13 (2) ◽

pp. 223-226 ◽

Cited By ~ 4

Author(s):

M. Daibo ◽

T. Kikuchi ◽

M. Yoshizawa

Keyword(s):

Minority Carrier ◽

Diffusion Length ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Length Measurements ◽

Multiwavelength Laser

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Interpretation of minority carrier diffusion length measurements in thin silicon wafers

Solar Energy Materials and Solar Cells ◽

10.1016/s0927-0248(02)00371-9 ◽

2003 ◽

Vol 76 (2) ◽

pp. 205-210 ◽

Cited By ~ 11

Author(s):

J. Toušek ◽

S. Dolhov ◽

J. Toušková

Keyword(s):

Minority Carrier ◽

Diffusion Length ◽

Silicon Wafers ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Length Measurements ◽

Thin Silicon

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Influence of Rapid Thermal Processing on Minority Carrier Diffusion Length in Silicon

MRS Proceedings ◽

10.1557/proc-146-185 ◽

1989 ◽

Vol 146 ◽

Author(s):

Wolfgang A. Eichammer ◽

Thuong-QUat Vu ◽

P. Siffert

Keyword(s):

Thermal Processing ◽

Minority Carrier ◽

Diffusion Length ◽

Rapid Thermal Processing ◽

Impurity Content ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Length Measurements ◽

Recombination Centers

ABSTRACTMinority carrier diffusion length measurements (SPV-method) are presented which illustrate the role of contamination, residual impurity content and surfaces in the formation of RTP-induced recombination centers.

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