Influence of Rapid Thermal Processing on Minority Carrier Diffusion Length in Silicon

1989 ◽  
Vol 146 ◽  
Author(s):  
Wolfgang A. Eichammer ◽  
Thuong-QUat Vu ◽  
P. Siffert

ABSTRACTMinority carrier diffusion length measurements (SPV-method) are presented which illustrate the role of contamination, residual impurity content and surfaces in the formation of RTP-induced recombination centers.

1995 ◽  
Vol 387 ◽  
Author(s):  
K. Mahfoud ◽  
B. Hartiti ◽  
J. C. Muller ◽  
P. Siffert

AbstractLocal motion, diffusion and interaction of impurities in solids are important aspects of semiconductor material and device processing. Rapid thermal processing (RTP) is extremely concerned and appears to offer significant advantages in these areas. As oxygen is one of the dominant impurities present in silicon, various applications require different level of oxygen to improve the device performance.In this work, we have taken the advantage of this feature to study the effects of the oxygen concentration in silicon on the rapid thermal co-diffusion of phosphorus and aluminium. In particular, we will show that the large enhancement of the minority carrier diffusion length (LD) due to this process can be related to the presence of oxygen and carbon which influences during the thermal cycle are of importance.


2005 ◽  
Vol 97 (5) ◽  
pp. 053703 ◽  
Author(s):  
Alexander Y. Polyakov ◽  
Qiang Li ◽  
Sung Wook Huh ◽  
Marek Skowronski ◽  
Olena Lopatiuk ◽  
...  

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