Influence of Rapid Thermal Processing on Minority Carrier Diffusion Length in Silicon
Keyword(s):
ABSTRACTMinority carrier diffusion length measurements (SPV-method) are presented which illustrate the role of contamination, residual impurity content and surfaces in the formation of RTP-induced recombination centers.
1989 ◽
Vol 50
(C6)
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pp. C6-31-C6-46
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1985 ◽
Vol 132
(12)
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pp. 2992-2997
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2003 ◽
Vol 13
(2)
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pp. 223-226
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