Refinements in the determination of minority‐carrier diffusion length measurements of polycrystalline silicon materials by the surface photovoltage method

1987 ◽  
Vol 62 (8) ◽  
pp. 3249-3252 ◽  
Author(s):  
Ruyue Yan ◽  
Franklin F. Y. Wang ◽  
Reed R. Corderman ◽  
Chandra P. Khattak ◽  
Martin H. Leipold
Keyword(s):  
Polycrystalline Silicon ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Surface Photovoltage ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion ◽  
Length Measurements ◽  
Silicon Materials

Imaging transport for the determination of minority carrier diffusion length

2006 ◽  
Vol 88 (16) ◽  
pp. 163509 ◽  
Author(s):  
D. R. Luber ◽  
F. M. Bradley ◽  
N. M. Haegel ◽  
M. C. Talmadge ◽  
M. P. Coleman ◽  
...  
Keyword(s):  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion

Influence of Rapid Thermal Annealing on Recombination Properties of Polycrystalline Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
M. Kittler ◽  
W. Seifert
Keyword(s):  
Beneficial Effect ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion

ABSTRACTRapid thermal annealing was shown by EBIC to increase the minority-carrier diffusion length in cast polycrystalline silicon. The beneficial effect is due to a deactivation of intragrain defects (mainly dislocations) and is stable against post-RTA annealing up to at least 600 °C/ 10 min.

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