Room temperature instability of electron induced defects in n‐type silicon containing germanium

1979 ◽  
Vol 35 (10) ◽  
pp. 769-770 ◽  
Author(s):  
A. O. Evwaraye
Keyword(s):  
Room Temperature ◽  
Temperature Instability ◽  
Type Silicon ◽  
Induced Defects

scholarly journals MINIMAL VARIATION OF DEFECT STRUCTURE DUE TO THE ORDER OF ROOM TEMPERATURE HYDROGEN ISOTOPE IMPLANTATION AND SELF-ION IRRADIATION IN NICKEL

MRS Advances ◽  
2016 ◽  
Vol 1 (42) ◽  
pp. 2887-2892
Author(s):  
Brittany Muntifering ◽  
Jianmin Qu ◽  
Khalid Hattar
Keyword(s):  
Dislocation Loop ◽  
Hydrogen Isotope ◽  
Room Temperature ◽  
Ion Irradiation ◽  
In Situ Tem ◽  
Loop Formation ◽  
Radiation Induced ◽  
Formation And Evolution ◽  
And Performance ◽  
Induced Defects

ABSTRACTThe formation and stability of radiation-induced defects in structural materials in reactor environments significantly effects their integrity and performance. Hydrogen, which may be present in significant quantities in future reactors, may play an important role in defect evolution. To characterize the effect of hydrogen on cascade damage evolution, in-situ TEM self-ion irradiation and deuterium implantation was performed, both sequentially and concurrently, on nickel. This paper presents preliminary results characterizing dislocation loop formation and evolution during room temperature deuterium implantation and self-ion irradiation and the consequence of the sequence of irradiation. Hydrogen isotope implantation at room temperature appears to have little or no effect on the final dislocation loop structures that result from self-ion irradiation, regardless of the sequence of irradiation. Tilting experiments emphasize the importance of precise two-beam conditions for characterizing defect size and structure.

scholarly journals The Deformation Behavior and Bending Emissions of ZnO Microwire Affected by Deformation-Induced Defects and Thermal Tunneling Effect

Sensors ◽  
2021 ◽  
Vol 21 (17) ◽  
pp. 5887
Author(s):  
Linlin Shi ◽  
Hong Wang ◽  
Xiaohui Ma ◽  
Yunpeng Wang ◽  
Fei Wang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Luminescent Properties ◽  
Tunneling Effect ◽  
Light Sources ◽  
Electrical Characteristics ◽  
Fundamental Research ◽  
Induced Defects ◽  
Theoretical Simulations ◽  
Bright Emission

The realization of electrically pumped emitters at micro and nanoscale, especially with flexibility or special shapes is still a goal for prospective fundamental research and application. Herein, zinc oxide (ZnO) microwires were produced to investigate the luminescent properties affected by stress. To exploit the initial stress, room temperature in situ elastic bending stress was applied on the microwires by squeezing between the two approaching electrodes. A novel unrecoverable deformation phenomenon was observed by applying a large enough voltage, resulting in the formation of additional defects at bent regions. The electrical characteristics of the microwire changed with the applied bending deformation due to the introduction of defects by stress. When the injection current exceeded certain values, bright emission was observed at bent regions, ZnO microwires showed illumination at the bent region priority to straight region. The bent emission can be attributed to the effect of thermal tunneling electroluminescence appeared primarily at bent regions. The physical mechanism of the observed thermoluminescence phenomena was analyzed using theoretical simulations. The realization of electrically induced deformation and the related bending emissions in single microwires shows the possibility to fabricate special-shaped light sources and offer a method to develop photoelectronic devices.

Room‐Temperature Ni Interaction with Deformation‐Induced Defects in Si: A DLTS Study

2019 ◽  
Vol 216 (17) ◽  
pp. 1900326
Author(s):  
Oleg A. Soltanovich ◽  
Valery I. Orlov ◽  
Nikolai Yarykin ◽  
Eugene B. Yakimov
Keyword(s):  
Room Temperature ◽  
Induced Defects

scholarly journals Electrical characterization of electron beam exposure induced defects in epitaxially grown n-type silicon

2019 ◽  
Author(s):  
H. T. Danga ◽  
F. D. Auret ◽  
S. M. Tunhuma ◽  
E. Omotoso ◽  
E. Igumbor ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electrical Characterization ◽  
Type Silicon ◽  
Induced Defects

DLTS studies of defects produced in n-type silicon by hydrogen implantation at low temperature

2002 ◽  
Vol 744 ◽  
Author(s):  
Takahide Sugiyama ◽  
Masayasu Ishiko ◽  
Shigeki Kanazawa ◽  
Yutaka Tokuda
Keyword(s):  
Activation Energy ◽  
Low Temperature ◽  
Room Temperature ◽  
Reverse Bias ◽  
Thermal Emission ◽  
Sample Temperature ◽  
Zero Bias ◽  
Type Silicon ◽  
Projected Range ◽  
Hydrogen Implantation

ABSTRACTMetastable defects are discovered in hydrogen-implanted n-type silicon. Hydrogen implantation was performed with the energy of 80 keV to a dose of 2×10 cm- at 109 K. After implantation, the sample temperature was raised to room temperature. DLTS measurements were carried out in the temperature range 80–290 K for fabricated diodes. When the sample is reverse-biased at 10V for 10 min at room temperature and then is cooled down to 80 K, three new peaks labeled EM1, EM2 and EM3 appear around 150, 190 and 240 K, respectively. The introduction of metastable defects is found to be characteristic of low temperature implantation. We have evaluated properties of EM1 in detail. EM1 with thermal emission activation energy of 0.29 eV has a peak in concentration around the depth of 0.64 μ m, which corresponds to the projected range of 80 keV hydrogen. EM1 is regenerated with the reverse bias applied around 270 K and is removed with the zero bias around 220 K.

Low temperature anneal of electron irradiation induced defects in p type silicon

1998 ◽  
Vol 14 (12) ◽  
pp. 1295-1298 ◽  
Author(s):  
M.-A. Trauwaert ◽  
J. Vanhellemont ◽  
H. E. Maes ◽  
A.-M. Van Bavel ◽  
G. Langouche
Keyword(s):  
Low Temperature ◽  
Electron Irradiation ◽  
Type Silicon ◽  
P Type ◽  
Induced Defects ◽  
Irradiation Induced Defects

Control of and Mechanisms for Room Temperature Visible light Emission from Silicon Nanostructures in SiO2 formed by Si+ Ion Implantation

1994 ◽  
Vol 358 ◽  
Author(s):  
T. Komoda ◽  
J.P. Kelly ◽  
A. Nejm ◽  
K.P. Homewood ◽  
P.L.F Hemment ◽  
...  
Keyword(s):  
Quantum Confinement ◽  
Room Temperature ◽  
Light Emission ◽  
Silicon Nanostructures ◽  
Two Phase ◽  
Population Distributions ◽  
Si Nanocrystals ◽  
Induced Defects ◽  
Irradiation Induced Defects ◽  
Si Ion Implantation

ABSTRACTImplantation of Si+ ions into thermal oxides grown on silicon has been used to synthesise a two phase structure consisting of Si nanocrystals in a SiO2 matrix. Various processing conditions have been used in order to modify the size and population distributions of the Si inclusions. Photoluminescence spectra have been recorded from samples annealed in nitrogen, forming gas and oxygen. Both red and blue shifts of the luminescence peaks have been observed. It is concluded that the photoluminescence is a consequence of the effects of quantum confinement but is also dependent on the presence of irradiation-induced defects or Si/SiO2 interface states.

scholarly journals Ultra-slow dynamic annealing of neutron-induced defects in n-type silicon: role of charge carriers

2020 ◽  
Vol 135 (10) ◽  
Author(s):  
Ying Zhang ◽  
Yang Liu ◽  
Hang Zhou ◽  
Ping Yang ◽  
Jie Zhao ◽  
...  
Keyword(s):  
Charge Carriers ◽  
Slow Dynamic ◽  
Type Silicon ◽  
Induced Defects

Study of negative-bias temperature-instability-induced defects using first-principle approach

2003 ◽  
Vol 83 (15) ◽  
pp. 3063-3065 ◽  
Author(s):  
Jia Mei Soon ◽  
Kian Ping Loh ◽  
Shyue Seng Tan ◽  
T. P. Chen ◽  
W. Y. Teo ◽  
...  
Keyword(s):  
Negative Bias ◽  
First Principle ◽  
Negative Bias Temperature Instability ◽  
Temperature Instability ◽  
Bias Temperature Instability ◽  
Induced Defects
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