scholarly journals Electrical characterization of electron beam exposure induced defects in epitaxially grown n-type silicon

2019 ◽  
Author(s):  
H. T. Danga ◽  
F. D. Auret ◽  
S. M. Tunhuma ◽  
E. Omotoso ◽  
E. Igumbor ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electrical Characterization ◽  
Type Silicon ◽  
Induced Defects

Electrical Characterization of Electron Beam Induced Defects in Epitaxially Grown Si1-xGex

1997 ◽  
Vol 258-263 ◽  
pp. 115-120 ◽  
Author(s):  
M. Mamor ◽  
F. Danie Auret ◽  
S.A. Goodman ◽  
G. Myburg ◽  
Prakash N.K. Deenapanray ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electrical Characterization ◽  
Induced Defects

Electrical characterization of sputter-deposition-induced defects in epitaxially grown n-GaAs layers

Vacuum ◽  
1995 ◽  
Vol 46 (8-10) ◽  
pp. 1087-1090 ◽  
Author(s):  
F Danie Auret ◽  
SA Goodman ◽  
G Myburg ◽  
WO Barnard
Keyword(s):  
Electrical Characterization ◽  
Sputter Deposition ◽  
Induced Defects

Electrical characterization of defects introduced in n-Si during electron beam deposition of Pt

2012 ◽  
Vol 209 (10) ◽  
pp. 1926-1933 ◽  
Author(s):  
F. D. Auret ◽  
S. M. M. Coelho ◽  
J. M. Nel ◽  
W. E. Meyer
Keyword(s):  
Electron Beam ◽  
Electrical Characterization ◽  
Electron Beam Deposition ◽  
Beam Deposition

Electrical Characterization of Residual Implantation-Induced Defects in the Vicinity of Laser-Annealed Implanted Ultrashallow Junctions

2006 ◽  
Vol 912 ◽  
Author(s):  
V. Gonda ◽  
S. Liu ◽  
T.L.M. Scholtes ◽  
L.K. Nanver
Keyword(s):  
Sheet Resistance ◽  
Laser Annealing ◽  
Electrical Characterization ◽  
Implantation Dose ◽  
Excimer Laser Annealing ◽  
Ultrashallow Junctions ◽  
Residual Damage ◽  
Doping Profiles ◽  
Induced Defects

AbstractUltrashallow junctions (USJ) were created by tilted 5 keV As+ implantation to a dose of 3x1015 cm−2 followed by excimer laser annealing (ELA). Sheet resistance and capacitances were measured in the background layer below the USJ. Results showed that sheet resistance was dependent on the laser energies in the close vicinity of these diodes. Doping profiles extracted from the capacitances indicated electrical deactivation here caused by the residual implantation defects. The extent and location of the residual damage is shown to be strongly dependent on the implantation dose and tilt angles, and also influenced by the laser annealing.

scholarly journals Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation

2011 ◽  
Vol 679-680 ◽  
pp. 804-807 ◽  
Author(s):  
F. Danie Auret ◽  
Walter E. Meyer ◽  
M. Diale ◽  
P.J. Janse Van Rensburg ◽  
S.F. Song ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Deep Level ◽  
Energy Levels ◽  
Electrical Characterization ◽  
Defect States ◽  
First Order Kinetics ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Transformation Processes

Gallium nitride (GaN), grown by HVPE, was implanted with 300 keV Eu ions and then annealed at 1000 oC . Deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) were used to characterise the ion implantation induced defects in GaN. Two of the implantation induced defects, E1 and E2, with DLTS peaks in the 100 – 200 K temperature range, had DLTS signals that could be studied with L-DLTS. We show that these two defects, with energy levels of 0.18 eV and 0.27 eV below the conduction band, respectively, are two configurations of a metastable defect. These two defect states can be reproducibly removed and re-introduced by changing the pulse, bias and temperature conditions, and the transformation processes follow first order kinetics.

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