Study of negative-bias temperature-instability-induced defects using first-principle approach

Jia Mei Soon; Kian Ping Loh; Shyue Seng Tan; T. P. Chen; W. Y. Teo; L. Chan

doi:10.1063/1.1614415

Study of negative-bias temperature-instability-induced defects using first-principle approach

Applied Physics Letters ◽

10.1063/1.1614415 ◽

2003 ◽

Vol 83 (15) ◽

pp. 3063-3065 ◽

Cited By ~ 6

Author(s):

Jia Mei Soon ◽

Kian Ping Loh ◽

Shyue Seng Tan ◽

T. P. Chen ◽

W. Y. Teo ◽

...

Keyword(s):

Negative Bias ◽

First Principle ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Induced Defects

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Fluorine IMP Effect on Negative Bias Temperature Instability and Process Induced Defects

ECS Transactions ◽

10.1149/1.3360597 ◽

2019 ◽

Vol 27 (1) ◽

pp. 67-72 ◽

Cited By ~ 1

Author(s):

Allan Zhou ◽

Jinhua Liu ◽

K. Zheng ◽

Jianhua Ju ◽

Jing Zhang ◽

...

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Induced Defects

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Nitrogen-enhanced negative bias temperature instability: An insight by experiment and first-principle calculations

Applied Physics Letters ◽

10.1063/1.1563045 ◽

2003 ◽

Vol 82 (12) ◽

pp. 1881-1883 ◽

Cited By ~ 60

Author(s):

Shyue Seng Tan ◽

T. P. Chen ◽

Jia Mei Soon ◽

Kian Ping Loh ◽

C. H. Ang ◽

...

Keyword(s):

Negative Bias ◽

First Principle ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

First Principle Calculations ◽

Bias Temperature Instability

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New Multi-stages – Hydrogen Diffusion Model for Negative Bias Temperature Instability

Journal of Nano- and Electronic Physics ◽

10.21272/jnep.11(4).04018 ◽

2019 ◽

Vol 11 (4) ◽

pp. 04018-1-04018-6

Author(s):

M. Mallati ◽

◽

H. Bentarzi ◽

Keyword(s):

Diffusion Model ◽

Hydrogen Diffusion ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate Stacks

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796094 ◽

2008 ◽

Cited By ~ 7

Author(s):

Tibor Grasser ◽

Ben Kaczer ◽

Thomas Aichinger ◽

Wolfgang Goes ◽

Michael Nelhiebel

Keyword(s):

Driving Force ◽

Negative Bias ◽

Gate Stacks ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Thermally Activated ◽

Bias Temperature Instability ◽

Hole Trapping ◽

High K ◽

Defect Creation

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A novel Negative Bias Temperature Instability model for nanoscale Finfet

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2009.5232688 ◽

2009 ◽

Author(s):

Chenyue Ma ◽

Bo Li ◽

Frank He ◽

Xing Zhang ◽

Xinnan Lin

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Spin dependent recombination study of the atomic-scale effects of fluorine on the negative bias temperature instability

2009 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2009.5173396 ◽

2009 ◽

Cited By ~ 2

Author(s):

J.T. Ryan ◽

P.M. Lenahan ◽

A.T. Krishnan ◽

S. Krishnan ◽

J.P. Campbell

Keyword(s):

Scale Effects ◽

Atomic Scale ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) ◽

10.1109/iedm.2001.979649 ◽

2002 ◽

Cited By ~ 22

Author(s):

C.H. Liu ◽

M.T. Lee ◽

Chih-Yung Lin ◽

J. Chen ◽

K. Schruefer ◽

...

Keyword(s):

Gate Dielectrics ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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The Impact of Nitrogen Engineering in Silicon Oxynitride Gate Dielectric on Negative-Bias Temperature Instability of p-MOSFETs: A Study by Ultrafast On-The-Fly $I_{\rm DLIN}$ Technique

IEEE Transactions on Electron Devices ◽

10.1109/ted.2008.923524 ◽

2008 ◽

Vol 55 (7) ◽

pp. 1630-1638 ◽

Cited By ~ 39

Author(s):

Vrajesh D. Maheta ◽

Christopher Olsen ◽

Khaled Ahmed ◽

Souvik Mahapatra

Keyword(s):

Gate Dielectric ◽

Silicon Oxynitride ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

The Impact

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Impact of negative bias temperature instability on digital circuit reliability

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) ◽

10.1109/relphy.2002.996644 ◽

2003 ◽

Cited By ~ 102

Author(s):

V. Reddy ◽

A.T. Krishnan ◽

A. Marshall ◽

J. Rodriguez ◽

S. Natarajan ◽

...

Keyword(s):

Digital Circuit ◽

Negative Bias ◽

Circuit Reliability ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Impact of substrate bias on p-MOSFET negative bias temperature instability

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. ◽

10.1109/relphy.2005.1493212 ◽

2005 ◽

Cited By ~ 2

Author(s):

P.B. Kurnars ◽

T.R. Dalei ◽

D. Varghese ◽

D. Saba ◽

S. Mahapatra ◽

...

Keyword(s):

Negative Bias ◽

Substrate Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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