Room‐temperature operation of distributed‐Bragg‐confinement Ga1−xAlxAs‐GaAs lasers grown by metalorganic chemical vapor deposition

R. D. Dupuis; P. D. Dapkus

doi:10.1063/1.90147

Room‐temperature operation of distributed‐Bragg‐confinement Ga1−xAlxAs‐GaAs lasers grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.90147 ◽

1978 ◽

Vol 33 (1) ◽

pp. 68-69 ◽

Cited By ~ 24

Author(s):

R. D. Dupuis ◽

P. D. Dapkus

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Metalorganic Chemical ◽

Room Temperature Operation

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Continuous-wave room-temperature operation of InGaN/GaN multiquantum well lasers grown by low-pressure metalorganic chemical vapor deposition

10.1117/12.304463 ◽

1998 ◽

Cited By ~ 2

Author(s):

Manijeh Razeghi ◽

Adam W. Saxler ◽

Patrick Kung ◽

Danielle Walker ◽

Xiaolong Zhang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Continuous Wave ◽

Chemical Vapor ◽

Low Pressure ◽

Metalorganic Chemical ◽

Room Temperature Operation ◽

Multiquantum Well

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Continuous room‐temperature operation of Ga(1−x)AlxAs‐GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.90085 ◽

1978 ◽

Vol 32 (7) ◽

pp. 406-407 ◽

Cited By ~ 43

Author(s):

R. D. Dupuis ◽

P. D. Dapkus

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Double Heterostructure ◽

Metalorganic Chemical ◽

Room Temperature Operation

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IIa-9 room-temperature operation of Ga(1-x)AlxAs/GaAs double heterostructure lasers grown by metalorganic chemical vapor deposition (late paper)

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1977.18921 ◽

1977 ◽

Vol 24 (9) ◽

pp. 1195-1196 ◽

Cited By ~ 4

Author(s):

R.D. Dupuis ◽

P.D. Dapkus

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Double Heterostructure ◽

Metalorganic Chemical ◽

Room Temperature Operation

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Room‐temperature operation of Ga(1−x)AlxAs/GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.89743 ◽

1977 ◽

Vol 31 (7) ◽

pp. 466-468 ◽

Cited By ~ 125

Author(s):

R. D. Dupuis ◽

P. D. Dapkus

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Double Heterostructure ◽

Metalorganic Chemical ◽

Room Temperature Operation

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700‐h continuous room‐temperature operation of AlxGa1−xAs‐GaAs heterostructure lasers grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.91121 ◽

1979 ◽

Vol 35 (4) ◽

pp. 311-314 ◽

Cited By ~ 24

Author(s):

R. D. Dupuis

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Metalorganic Chemical ◽

Room Temperature Operation

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Room-Temperature Operation of GaInNAs/GaInP Double-Heterostructure Laser Diodes Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.2671 ◽

1997 ◽

Vol 36 (Part 1, No. 5A) ◽

pp. 2671-2675 ◽

Cited By ~ 93

Author(s):

Shun-ichi Sato ◽

Yasuhiro Osawa ◽

Tetsuro Saitoh

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Double Heterostructure ◽

Heterostructure Laser ◽

Metalorganic Chemical ◽

Room Temperature Operation

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First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.3860 ◽

2000 ◽

Vol 39 (Part 1, No. 7A) ◽

pp. 3860-3862 ◽

Cited By ~ 9

Author(s):

Zaman Iqbal Kazi ◽

Takashi Egawa ◽

Takashi Jimbo ◽

Masayoshi Umeno

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Dot ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Continuous Wave ◽

Chemical Vapor ◽

Si Substrate ◽

Continuous Wave Operation ◽

Metalorganic Chemical

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Room-temperature optical transitions in Mg-doped cubic GaN/GaAs(100) grown by metalorganic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.372139 ◽

2000 ◽

Vol 87 (4) ◽

pp. 2064-2066 ◽

Cited By ~ 8

Author(s):

Dapeng Xu ◽

Hui Yang ◽

D. G. Zhao ◽

S. F. Li ◽

R. H. Wu

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Optical Transitions ◽

Cubic Gan ◽

Metalorganic Chemical ◽

Mg Doped

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Room‐temperature excitons in Ga0.47In0.53As‐InP superlattices grown by low‐pressure metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.97437 ◽

1986 ◽

Vol 49 (17) ◽

pp. 1110-1111 ◽

Cited By ~ 23

Author(s):

M. Razeghi ◽

J. Nagle ◽

P. Maurel ◽

F. Omnes ◽

J. P. Pocholle

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Metalorganic Chemical

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Substrate, annealing, and Mn excess effects on La–Ca–MnO3 thin films grown by metalorganic chemical vapor deposition: A way to room-temperature Tc

Journal of Applied Physics ◽

10.1063/1.369994 ◽

1999 ◽

Vol 85 (8) ◽

pp. 5411-5413 ◽

Cited By ~ 15

Author(s):

P. B. Tavares ◽

V. S. Amaral ◽

J. P. Araújo ◽

J. B. Sousa ◽

A. A. C. S. Lourenço ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Substrate Annealing ◽

Metalorganic Chemical

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