Substrate, annealing, and Mn excess effects on La–Ca–MnO3 thin films grown by metalorganic chemical vapor deposition: A way to room-temperature Tc

1999 ◽  
Vol 85 (8) ◽  
pp. 5411-5413 ◽  
Author(s):  
P. B. Tavares ◽  
V. S. Amaral ◽  
J. P. Araújo ◽  
J. B. Sousa ◽  
A. A. C. S. Lourenço ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Substrate Annealing ◽  
Metalorganic Chemical

Phase stability of epitaxial KTaxNb1−xO3 thin films deposited by metalorganic chemical vapor deposition

2003 ◽  
Vol 18 (1) ◽  
pp. 106-110 ◽  
Author(s):  
B. M. Nichols ◽  
B. H. Hoerman ◽  
J-H. Hwang ◽  
T. O. Mason ◽  
B. W. Wessels
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Phase Stability ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Metalorganic Chemical Vapor Deposition ◽  
Structural Phase ◽  
Chemical Vapor ◽  
Rhombohedral Phase ◽  
Metalorganic Chemical

The phase stability of epitaxial KTaxNb1−xO3 (0 ≤ x ≤ 1) thin films, with compositions over the entire solid solution range, was investigated. KTaxNb1−xO3 thin films were deposited on (100) MgAl2O4 substrates by metalorganic chemical vapor deposition. Films with compositions x ≤ 0.30 were orthorhombic, as determined by x-ray diffraction. Dielectric measurements at room temperature indicated the presence of morphotropic phase boundaries at x = 0.30 and at x = 0.74. Temperature-dependent measurements of the dielectric constant for KNbO3 from 80 to 800 K indicated three structural phase transitions at 710, 520, and 240 K. For intermediate compositions, a decrease in the Curie and tetragonal–orthorhombic transition temperatures was observed with increasing Ta atomic percent, similar to the bulk phase equilibrium. In contrast to bulk materials, an increase in the orthorhombic–rhombohedral transition temperature with increasing x was observed for the films, resulting in the stabilization of a rhombohedral phase at room temperature for compositions 0.45 ≤ x ≤ 0.73. Differences between the phase stability for the thin films and bulk were attributed to lattice misfit strain.

scholarly journals Epitaxial and large area Sb2Te3 thin films on silicon by MOCVD

RSC Advances ◽  
2020 ◽  
Vol 10 (34) ◽  
pp. 19936-19942 ◽  
Author(s):  
Martino Rimoldi ◽  
Raimondo Cecchini ◽  
Claudia Wiemer ◽  
Alessio Lamperti ◽  
Emanuele Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Antimony Telluride ◽  
Large Area ◽  
Metalorganic Chemical

Highly oriented antimony telluride thin films are prepared by room temperature metalorganic chemical vapor deposition on Si(111).

Mechanistic study of metalorganic chemical vapor deposition of (Ba,Sr)TiO3 thin films

2000 ◽  
Vol 87 (10) ◽  
pp. 7430-7437 ◽  
Author(s):  
Y. Gao ◽  
C. L. Perkins ◽  
S. He ◽  
P. Alluri ◽  
T. Tran ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Mechanistic Study ◽  
Metalorganic Chemical
Sign in / Sign up

Export Citation Format

Share Document