Room‐temperature operation of Ga(1−x)AlxAs/GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition

R. D. Dupuis; P. D. Dapkus

doi:10.1063/1.89743

Room‐temperature operation of Ga(1−x)AlxAs/GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.89743 ◽

1977 ◽

Vol 31 (7) ◽

pp. 466-468 ◽

Cited By ~ 125

Author(s):

R. D. Dupuis ◽

P. D. Dapkus

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Double Heterostructure ◽

Metalorganic Chemical ◽

Room Temperature Operation

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Continuous room‐temperature operation of Ga(1−x)AlxAs‐GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.90085 ◽

1978 ◽

Vol 32 (7) ◽

pp. 406-407 ◽

Cited By ~ 43

Author(s):

R. D. Dupuis ◽

P. D. Dapkus

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Double Heterostructure ◽

Metalorganic Chemical ◽

Room Temperature Operation

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IIa-9 room-temperature operation of Ga(1-x)AlxAs/GaAs double heterostructure lasers grown by metalorganic chemical vapor deposition (late paper)

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1977.18921 ◽

1977 ◽

Vol 24 (9) ◽

pp. 1195-1196 ◽

Cited By ~ 4

Author(s):

R.D. Dupuis ◽

P.D. Dapkus

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Double Heterostructure ◽

Metalorganic Chemical ◽

Room Temperature Operation

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Room-Temperature Operation of GaInNAs/GaInP Double-Heterostructure Laser Diodes Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.2671 ◽

1997 ◽

Vol 36 (Part 1, No. 5A) ◽

pp. 2671-2675 ◽

Cited By ~ 93

Author(s):

Shun-ichi Sato ◽

Yasuhiro Osawa ◽

Tetsuro Saitoh

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Double Heterostructure ◽

Heterostructure Laser ◽

Metalorganic Chemical ◽

Room Temperature Operation

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Continuous-wave room-temperature operation of InGaN/GaN multiquantum well lasers grown by low-pressure metalorganic chemical vapor deposition

10.1117/12.304463 ◽

1998 ◽

Cited By ~ 2

Author(s):

Manijeh Razeghi ◽

Adam W. Saxler ◽

Patrick Kung ◽

Danielle Walker ◽

Xiaolong Zhang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Continuous Wave ◽

Chemical Vapor ◽

Low Pressure ◽

Metalorganic Chemical ◽

Room Temperature Operation ◽

Multiquantum Well

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Room‐temperature operation of distributed‐Bragg‐confinement Ga1−xAlxAs‐GaAs lasers grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.90147 ◽

1978 ◽

Vol 33 (1) ◽

pp. 68-69 ◽

Cited By ~ 24

Author(s):

R. D. Dupuis ◽

P. D. Dapkus

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Metalorganic Chemical ◽

Room Temperature Operation

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Ga(1−x)AlxAs/Ga(1−y)AlyAs double‐heterostructure room‐temperature lasers grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.89569 ◽

1977 ◽

Vol 31 (12) ◽

pp. 839-841 ◽

Cited By ~ 36

Author(s):

R. D. Dupuis ◽

P. D. Dapkus

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Double Heterostructure ◽

Metalorganic Chemical

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Room‐temperature pulsed operation of AlGaInP/GaInP/AlGaInP double heterostructure visible light laser diodes grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.94206 ◽

1983 ◽

Vol 43 (11) ◽

pp. 987-989 ◽

Cited By ~ 40

Author(s):

Isao Hino ◽

Akiko Gomyo ◽

Kenichi Kobayashi ◽

Tohru Suzuki ◽

Katsuhiko Nishida

Keyword(s):

Chemical Vapor Deposition ◽

Visible Light ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Double Heterostructure ◽

Metalorganic Chemical

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700‐h continuous room‐temperature operation of AlxGa1−xAs‐GaAs heterostructure lasers grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.91121 ◽

1979 ◽

Vol 35 (4) ◽

pp. 311-314 ◽

Cited By ~ 24

Author(s):

R. D. Dupuis

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Metalorganic Chemical ◽

Room Temperature Operation

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First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.3860 ◽

2000 ◽

Vol 39 (Part 1, No. 7A) ◽

pp. 3860-3862 ◽

Cited By ~ 9

Author(s):

Zaman Iqbal Kazi ◽

Takashi Egawa ◽

Takashi Jimbo ◽

Masayoshi Umeno

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Dot ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Continuous Wave ◽

Chemical Vapor ◽

Si Substrate ◽

Continuous Wave Operation ◽

Metalorganic Chemical

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Room-temperature optical transitions in Mg-doped cubic GaN/GaAs(100) grown by metalorganic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.372139 ◽

2000 ◽

Vol 87 (4) ◽

pp. 2064-2066 ◽

Cited By ~ 8

Author(s):

Dapeng Xu ◽

Hui Yang ◽

D. G. Zhao ◽

S. F. Li ◽

R. H. Wu

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Optical Transitions ◽

Cubic Gan ◽

Metalorganic Chemical ◽

Mg Doped

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