In situ electromigration damage in Al interconnect lines in the SEM and the influence of grain orientation

1999 ◽  
Author(s):  
Axel Buerke ◽  
Horst Wendrock ◽  
Klaus Wetzig
Keyword(s):  
Grain Orientation ◽  
Interconnect Lines

In-Situ Electromigration Damage of Al Interconnect Lines and the Influence of Grain Orientation

1999 ◽  
Vol 563 ◽  
Author(s):  
A. Buerke ◽  
H. Wendrock ◽  
T. KÖtter ◽  
S. Menzel ◽  
K. Wetzig ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Grain Orientation ◽  
Local Orientation ◽  
Boundary Map ◽  
Diffusion Paths ◽  
Bamboo Structure ◽  
Ebsd Technique ◽  
Interconnect Lines ◽  
Current Loading

AbstractIn this work the authors want to report some experiments concerning unpassivated Al interconnect lines of 8 and 1.4 microns width which have been damaged by in-situ electromigration in the SEM (temperature 230°C, current density 2 and 4×106 A/cm2, respectively). The wider line represents a polygrained structure with few blocking grains spanning the whole width, whereas the narrow line shows bamboo structure. Before electromigration, the local orientation and thus the position of all grain boundaries was mapped by EBSD technique along the entire interconnect line. During and after in-situ current loading in the SEM, the damaged sites were correlated with the grain boundary map to locate where the diffusion paths are situated most likely. It was found that not the deviation from <111> fibre texture, but the misorientation class of the grain boundaries is essential for the localization of the fatal defects.

scholarly journals Reliability of multigrain indexing for orthorhombic polycrystals above 1 Mbar: application to MgSiO3 post-perovskite

2017 ◽  
Vol 50 (1) ◽  
pp. 120-130 ◽  
Author(s):  
Christopher Langrand ◽  
Nadège Hilairet ◽  
Carole Nisr ◽  
Mathieu Roskosz ◽  
Gábor Ribárik ◽  
...  
Keyword(s):  
Experimental Data ◽  
High Pressure ◽  
Grain Orientation ◽  
Diamond Anvil Cell ◽  
Polycrystalline Material ◽  
Data Set ◽  
Grain Orientations ◽  
Diamond Anvil ◽  
Diffraction Peaks

This paper describes a methodology for characterizing the orientation and position of grains of an orthorhombic polycrystalline material at high pressure in a diamond anvil cell. The applicability and resolution of the method are validated by simulations and tested on an experimental data set collected on MgSiO3 post-perovskite at 135 GPa. In the simulations, ∼95% of the grains can be indexed successfully with ∼80% of the peaks assigned. The best theoretical average resolutions in grain orientation and position are 0.02° and 1.4 µm, respectively. The indexing of experimental data leads to 159 grains of post-perovskite with 30% of the diffraction peaks assigned with a 0.2–0.4° resolution in grain orientation. The resolution in grain location is not sufficient for in situ analysis of spatial relationships at high pressure. The grain orientations are well resolved and sufficient for following processes such as plastic deformation or phase transformation. The paper also explores the effect of the indexing parameters and of experimental constraints such as rotation range and step on the validity of the results, setting a basis for optimized experiments.

scholarly journals Spatially Resolved Characterization of Electromigration-Induced Plastic Deformation in al (0.5WT% CU) Interconnect

2002 ◽  
Vol 738 ◽  
Author(s):  
R.I. Barabash ◽  
G.E. Ice ◽  
N. Tamura ◽  
J.R. Patel ◽  
B.C. Valek ◽  
...  
Keyword(s):  
Plastic Deformation ◽  
Dislocation Structure ◽  
Early Stage ◽  
X Ray ◽  
Spatially Resolved ◽  
Cu Interconnect ◽  
Interconnect Lines ◽  
Distributed Dislocations

ABSTRACTElectromigration during accelerated testing can induce early stage plastic deformation in Al interconnect lines as recently revealed by the white beam scanning X-ray microdiffraction. In the present paper, we provide a first quantitative analysis of the dislocation structure generated in individual micron-sized Al grains during anin-situelectromigration experiment. Laue reflections from individual interconnect grains show pronounced streaking after electric current flow. We demonstrate that the evolution of the dislocation structure during electromigration is highly inhomogeneous and results in the formation of unpaired randomly distributed dislocations as well as geometrically necessary dislocation boundaries. Approximately half of all unpaired dislocations are grouped within the walls. The misorientation created by each boundary and density of unpaired individual dislocations is determined.

On the Development of Grain-Orientation-Dependent and Inter-Phase Stresses in a Super Duplex Stainless Steel under Uniaxial Loading

2006 ◽  
Vol 524-525 ◽  
pp. 917-922 ◽  
Author(s):  
Ru Lin Peng ◽  
Yan Dong Wang ◽  
Guo Cai Chai ◽  
Nan Jia ◽  
Sten Johansson ◽  
...  
Keyword(s):  
Plastic Deformation ◽  
Stainless Steel ◽  
Neutron Diffraction ◽  
Grain Orientation ◽  
Super Duplex Stainless Steel ◽  
Lattice Strains ◽  
Duplex Steel ◽  
In Situ Neutron Diffraction ◽  
Phase Stresses

Microstresses due to intergranular and inter-phase interactions in an austenitic-ferritic super duplex steel (SAF 2507) under uniaxial compressive deformation have been studied by in-situ neutron diffraction experiments. Lattice strains of several hkl planes of austenite respective ferrite were mapped as a function of sample direction at a number of load levels during loading into the plastic regime and unloading. The analysis of the experimental results has shown that during loading both grain-orientation-dependent and inter-phase stresses were generated under plastic deformation that was inhomogeneous at the microstructural level. Residual stresses depending on the grain-orientation and phase have been found after unloading. The results also indicate stronger intergranular interactions among the studied hkl planes of austenite than those of ferrite.

scholarly journals Formation of Dislocations and Stacking Faults in Embedded Individual Grains during In Situ Tensile Loading of an Austenitic Stainless Steel

Materials ◽  
2021 ◽  
Vol 14 (20) ◽  
pp. 5919
Author(s):  
Benjamin Neding ◽  
Darren C. Pagan ◽  
Johan Hektor ◽  
Peter Hedström
Keyword(s):  
Deformation Mechanism ◽  
Grain Orientation ◽  
Profile Analysis ◽  
Tensile Axis ◽  
Stacking Faults ◽  
Tensile Loading ◽  
High Energy ◽  
Line Profile Analysis ◽  
Individual Grains

The formation of stacking faults and dislocations in individual austenite (fcc) grains embedded in a polycrystalline bulk Fe-18Cr-10.5Ni (wt.%) steel was investigated by non-destructive high-energy diffraction microscopy (HEDM) and line profile analysis. The broadening and position of intensity, diffracted from individual grains, were followed during in situ tensile loading up to 0.09 strain. Furthermore, the predominant deformation mechanism of the individual grains as a function of grain orientation was investigated, and the formation of stacking faults was quantified. Grains oriented with [100] along the tensile axis form dislocations at low strains, whilst at higher strains, the formation of stacking faults becomes the dominant deformation mechanism. In contrast, grains oriented with [111] along the tensile axis deform mainly through the formation and slip of dislocations at all strain states. However, the present study also reveals that grain orientation is not sufficient to predict the deformation characteristics of single grains in polycrystalline bulk materials. This is witnessed specifically within one grain oriented with [111] along the tensile axis that deforms through the generation of stacking faults. The reason for this behavior is due to other grain-specific parameters, such as size and local neighborhood.

In Situ Observation of Crystal Grain Orientation During Scuffing Process of Steel Surface Using Synchrotron X-ray Diffraction

2020 ◽  
Vol 68 (4) ◽  
Author(s):  
K. Yagi ◽  
T. Izumi ◽  
J. Koyamachi ◽  
S. Sanda ◽  
S. Yamaguchi ◽  
...  
Keyword(s):  
Grain Orientation ◽  
Steel Surface ◽  
In Situ Observation ◽  
X Ray Diffraction ◽  
X Ray

Quantitative Characterization of Dislocation Structure coupled with Electromigration in a Passivated Al (0.5wt%Cu) Interconnects

2003 ◽  
Vol 766 ◽  
Author(s):  
R.I. Barabash ◽  
N. Tamura ◽  
B.C. Valek ◽  
R. Spolenak ◽  
J.C. Bravman ◽  
...  
Keyword(s):  
Plastic Deformation ◽  
Dislocation Structure ◽  
Rotation Axis ◽  
Early Stage ◽  
Middle Region ◽  
Quantitative Characterization ◽  
X Ray ◽  
Interconnect Lines

AbstractNew synchrotron x-ray microbeam methodology is used to analyze and test the reliability of interconnects. The early stage of plastic deformation induced by electromigration before any damages become visible has been recently revealed by white beam scanning X-ray microdiffraction during an accelerated test on Al interconnect lines. In the present paper, we provide a quantitative analysis of the dislocation structure generated in several micron-sized Al grains in both the middle region and ends of the interconnect line during anin-situelectromigration experiment. We demonstrate that the evolution of the dislocation structure during electromigration is highly inhomogeneous and results in the formation of randomly distributed geometrically necessary dislocations as well as geometrically necessary boundaries. The orientation of the activated slip systems and rotation axis depends on the position of the grain in the interconnect line. The origin of the observed plastic deformation is considered in view of constraints for dislocation arrangements under applied electric field during electromigration. The coupling between plastic deformation and precipitation in the Al (0.5% wt. Cu) is observed for the grains close to the anode/cathode end of the line.

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