Quantitative Characterization of Dislocation Structure coupled with Electromigration in a Passivated Al (0.5wt%Cu) Interconnects

2003 ◽  
Vol 766 ◽  
Author(s):  
R.I. Barabash ◽  
N. Tamura ◽  
B.C. Valek ◽  
R. Spolenak ◽  
J.C. Bravman ◽  
...  

AbstractNew synchrotron x-ray microbeam methodology is used to analyze and test the reliability of interconnects. The early stage of plastic deformation induced by electromigration before any damages become visible has been recently revealed by white beam scanning X-ray microdiffraction during an accelerated test on Al interconnect lines. In the present paper, we provide a quantitative analysis of the dislocation structure generated in several micron-sized Al grains in both the middle region and ends of the interconnect line during anin-situelectromigration experiment. We demonstrate that the evolution of the dislocation structure during electromigration is highly inhomogeneous and results in the formation of randomly distributed geometrically necessary dislocations as well as geometrically necessary boundaries. The orientation of the activated slip systems and rotation axis depends on the position of the grain in the interconnect line. The origin of the observed plastic deformation is considered in view of constraints for dislocation arrangements under applied electric field during electromigration. The coupling between plastic deformation and precipitation in the Al (0.5% wt. Cu) is observed for the grains close to the anode/cathode end of the line.

2002 ◽  
Vol 738 ◽  
Author(s):  
R.I. Barabash ◽  
G.E. Ice ◽  
N. Tamura ◽  
J.R. Patel ◽  
B.C. Valek ◽  
...  

ABSTRACTElectromigration during accelerated testing can induce early stage plastic deformation in Al interconnect lines as recently revealed by the white beam scanning X-ray microdiffraction. In the present paper, we provide a first quantitative analysis of the dislocation structure generated in individual micron-sized Al grains during anin-situelectromigration experiment. Laue reflections from individual interconnect grains show pronounced streaking after electric current flow. We demonstrate that the evolution of the dislocation structure during electromigration is highly inhomogeneous and results in the formation of unpaired randomly distributed dislocations as well as geometrically necessary dislocation boundaries. Approximately half of all unpaired dislocations are grouped within the walls. The misorientation created by each boundary and density of unpaired individual dislocations is determined.


2004 ◽  
Vol 812 ◽  
Author(s):  
Arief S. Budiman ◽  
N. Tamura ◽  
B. C. Valek ◽  
K. Gadre ◽  
J. Maiz ◽  
...  

AbstractAn unexpected mode of plastic deformation was observed in damascene Cu interconnect test structure during an in-situ electromigration experiment and before the onset of visible microstructural damages (void, hillock formation). We show here, using a synchrotron technique of white beam X-ray microdiffraction, that the extent of this electromigration-induced plasticity is dependent on the line width. The grain texture of the line might also play an important role. In wide lines, plastic deformation manifests itself as grain bending and the formation of subgrain structures, while only grain rotation is observed in the narrower lines. This early stage behavior can have a direct bearing on the final failure stage of electromigration.


2008 ◽  
Vol 1079 ◽  
Author(s):  
Kai Chen ◽  
N. Tamura ◽  
K. N. Tu

ABSTRACTElectromigration is a phenomenon that has attracted much attention in the semiconductor industry because of its deleterious effects on electronic devices (such as interconnects) as they become smaller and current density passing through them increases. However, the effect of the electric current on the microstructure of interconnect lines during the very early stage of electromigration is not well documented. In the present report, we used synchrotron radiation based polychromatic X-ray microdiffraction for the in-situ study of the electromigration induced plasticity effects on individual grains of an Al (Cu) interconnect test structure. Dislocation slips which are activated by the electric current stressing are analyzed by the shape change of the diffraction peaks. The study shows polygonization of the grains due to the rearrangement of geometrically necessary dislocations (GND) in the direction of the current. Consequences of these findings are discussed.


2006 ◽  
Vol 914 ◽  
Author(s):  
Arief Budiman ◽  
N. Tamura ◽  
B. C. Valek ◽  
K. Gadre ◽  
J. Maiz ◽  
...  

AbstractThe Scanning X-Ray Submicron Diffraction (μ-SXRD) technique using focused synchrotron radiation white beam developed in the Beamline 7.3.3 at the ALS Berkeley Lab has been used to study the microstructural evolution at granular level of Cu polycrystalline lines during electromigration. Plastic deformation was observed in damascene Cu interconnect test structures during this in situ electromigration experiment and before the onset of visible microstructural damage (voiding, hillock formation). We show here that the extent of this electromigration-induced plasticity is dependent on the line width. In wide lines, plastic deformation manifests itself as grain bending and the formation of subgrain structures, while only grain rotation is observed in the narrower lines. The analysis of the Laue reflections allow for the determination of the geometrically necessary dislocation density in individual grains as well as for the misorientation angles between small angle boundaries generated by polygonization. The deformation geometry leads us to conclude that dislocations introduced by plastic flow lie predominantly in the direction of electron flow and may provide additional easy paths for the transport of point defects. Furthermore, we observe that the rotation axis of this plastic deformation coincides with one of the <112> line directions of the known slip systems for FCC crystal, and that it is always very close (within a few degrees) to the direction of the electron flow. This finding suggests a correlation of the proximity of certain <112> line directions to the direction of electron flow with the occurrence of plastic behavior. One important practical implication of this particular finding is that the grain texture of the line might thus play an important role in giving higher resistance towards early plastic response of the Cu line upon the electromigration loading.


1999 ◽  
Vol 590 ◽  
Author(s):  
D. Juul Jensen ◽  
Å. Kvick ◽  
E.M. Lauridsen ◽  
U. Lienert ◽  
L. Margulies ◽  
...  

ABSTRACTA newly developed synchrotron instrument – the so-called 3D X-ray microscope – is presented. The instrument is placed at the Materials Science beamline at ESRF and dedicated to local μm scale structural characterization within bulk materials. In this paper, emphasis is on in situ studies of thermomechanical processing. The potential of the instrument for characterization of single nuclei and grains is described and discussed based on both first results and planned experiments.


Author(s):  
R. E. Herfert

Studies of the nature of a surface, either metallic or nonmetallic, in the past, have been limited to the instrumentation available for these measurements. In the past, optical microscopy, replica transmission electron microscopy, electron or X-ray diffraction and optical or X-ray spectroscopy have provided the means of surface characterization. Actually, some of these techniques are not purely surface; the depth of penetration may be a few thousands of an inch. Within the last five years, instrumentation has been made available which now makes it practical for use to study the outer few 100A of layers and characterize it completely from a chemical, physical, and crystallographic standpoint. The scanning electron microscope (SEM) provides a means of viewing the surface of a material in situ to magnifications as high as 250,000X.


2016 ◽  
Vol 108 (21) ◽  
pp. 211902 ◽  
Author(s):  
Xian Chen ◽  
Nobumichi Tamura ◽  
Alastair MacDowell ◽  
Richard D. James

Author(s):  
Shabana Noor ◽  
Richard Goddard ◽  
Fehmeeda Khatoon ◽  
Sarvendra Kumar ◽  
Rüdiger W. Seidel

AbstractSynthesis and structural characterization of two heterodinuclear ZnII-LnIII complexes with the formula [ZnLn(HL)(µ-OAc)(NO3)2(H2O)x(MeOH)1-x]NO3 · n H2O · n MeOH [Ln = Pr (1), Nd (2)] and the crystal and molecular structure of [ZnNd(HL)(µ-OAc)(NO3)2(H2O)] [ZnNd(HL)(OAc)(NO3)2(H2O)](NO3)2 · n H2O · n MeOH (3) are reported. The asymmetrical compartmental ligand (E)-2-(1-(2-((2-hydroxy-3-methoxybenzylidene)amino)-ethyl)imidazolidin-2-yl)-6-methoxyphenol (H2L) is formed from N1,N3-bis(3-methoxysalicylidene)diethylenetriamine (H2valdien) through intramolecular aminal formation, resulting in a peripheral imidazoline ring. The structures of 1–3 were revealed by X-ray crystallography. The smaller ZnII ion occupies the inner N2O2 compartment of the ligand, whereas the larger and more oxophilic LnIII ions are found in the outer O2O2’ site. Graphic Abstract Synthesis and structural characterization of two heterodinuclear ZnII-LnIII complexes (Ln = Pr, Nd) bearing an asymmetrical compartmental ligand formed in situ from N1,N3-bis(3-methoxysalicylidene)diethylenetriamine (H2valdien) through intramolecular aminal formation are reported.


2014 ◽  
Vol 47 (6) ◽  
pp. 2078-2080 ◽  
Author(s):  
Monika Witala ◽  
Jun Han ◽  
Andreas Menzel ◽  
Kim Nygård

It is shown that small-angle X-ray scattering from binary liquid mixtures close to the critical point of demixing can be used forin situcharacterization of beam-induced heating of liquid samples. For demonstration purposes, the proposed approach is applied on a well studied critical mixture of water and 2,6-lutidine. Given a typical incident X-ray flux at a third-generation synchrotron light source and using a 1.5 mm-diameter glass capillary as sample container, a beam-induced local temperature increase of 0.45 ± 0.10 K is observed.


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