scholarly journals Crystallinity and electrical properties of silicon dioxide (SiO2) from rice straw

Author(s):  
Nazopatul P. Har ◽  
Irzaman ◽  
Irmansyah
2019 ◽  
Vol 963 ◽  
pp. 490-493
Author(s):  
Tomasz Sledziewski ◽  
Tobias Erlbacher ◽  
Anton Bauer ◽  
Lothar Frey ◽  
Xi Ming Chen ◽  
...  

A comparison between self-aligned process (using lift-off) and Ni-SALICIDE used in fabrication of ohmic contacts for SiC Power MOSFET is done. Both processes are demonstrated for 3.3 kV SiC VDMOS transistors fabricated on 100 mm substrates. It is shown that the Ni-SALICIDE process with first silicidation at 500 °C does not degrade the electrical properties of silicon dioxide; particularly, a degradation of the interlayer dielectric between source and gate is not evident. Additionally, this first silicidation is found to have a positive impact on the specific resistance of contacts formed on p-type SiC using NiAl2.6% as an ohmic metal.


2015 ◽  
Vol 1109 ◽  
pp. 253-256 ◽  
Author(s):  
M.A. Farehanim ◽  
U. Hashim ◽  
Norhayati Soin ◽  
A.H. Azman ◽  
S. Norhafiezah ◽  
...  

The electrical performances of silicon dioxide-based Interdigitated electrodes (IDEs) as biosensor were developed. The IDEs was made up by two individually addressable Interdigitated comb-like finger structure have frequently been suggested as a biosensor which promises higher sensitivity compared to conventional parallel electrodes. The purpose of this paper was to investigate the capacitance test and impedance test to taken with various pH solution to observe the response of the sensor with different pH values. Purchased pH buffer solutions which varied from pH2 to pH10 are dropped on the microelectrode and the effect on it is investigated for the application in pH measurement. This research has proven that increase in pH value from acidic to alkaline is proportional with capacitance. The measured values of capacitance with respect to each pH concentrations applied during the measurements were repeatable and reproducible.


2017 ◽  
Vol 897 ◽  
pp. 340-343 ◽  
Author(s):  
Atthawut Chanthaphan ◽  
Yoshihito Katsu ◽  
Takuji Hosoi ◽  
Takayoshi Shimura ◽  
Heiji Watanabe

Surface morphology and electrical properties of silicon dioxide (SiO2) on 4H-SiC substrates formed by metal-enhanced oxidation (MEO) using barium (Ba) atoms were systematically investigated. It was found that severe surface roughening caused by Ba-MEO can be suppressed by using SiO2 capping prior to MEO. The Ba atoms at the SiO2/SiC interface were found to diffuse to the oxide surface through the deposited SiO2 capping layer, and then the Ba density reduced to ~1014 cm-2 before stable MEO. The resulting SiO2/SiC interface showed the reduced interface state density but the insulating property of the oxides was significantly degraded.


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