scholarly journals Influence of hydrogen implantation on emission from the silicon vacancy in 4H-SiC

2020 ◽  
Vol 127 (8) ◽  
pp. 085701 ◽  
Author(s):  
M. E. Bathen ◽  
A. Galeckas ◽  
J. Coutinho ◽  
L. Vines
Keyword(s):  
Silicon Vacancy ◽  
Hydrogen Implantation

Dechannealing Study of Nanocrystalline Si:H Layers Produced by High Dose Hydrogen Irradiation of Silicon Crystals

1998 ◽  
Vol 536 ◽  
Author(s):  
V. P. Popov ◽  
A. K. Gutakovsky ◽  
I. V. Antonova ◽  
K. S. Zhuravlev ◽  
E. V. Spesivtsev ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Nanocrystalline Structure ◽  
Structural Defects ◽  
High Dose ◽  
Silicon Crystals ◽  
Strong Energy ◽  
Transmission Electron ◽  
Hydrogen Implantation

AbstractA study of Si:H layers formed by high dose hydrogen implantation (up to 3x107cm-2) using pulsed beams with mean currents up 40 mA/cm2 was carried out in the present work. The Rutherford backscattering spectrometry (RBS), channeling of He ions, and transmission electron microscopy (TEM) were used to study the implanted silicon, and to identify the structural defects (a-Si islands and nanocrystallites). Implantation regimes used in this work lead to creation of the layers, which contain hydrogen concentrations higher than 15 at.% as well as the high defect concentrations. As a result, the nano- and microcavities that are created in the silicon fill with hydrogen. Annealing of this silicon removes the radiation defects and leads to a nanocrystalline structure of implanted layer. A strong energy dependence of dechanneling, connected with formation of quasi nanocrystallites, which have mutual small angle disorientation (<1.50), was found after moderate annealing in the range 200-500°C. The nanocrystalline regions are in the range of 2-4 nm were estimated on the basis of the suggested dechanneling model and transmission electron microscopy (TEM) measurements. Correlation between spectroscopic ellipsometry, visible photoluminescence, and sizes of nanocrystallites in hydrogenated nc-Si:H is observed.

scholarly journals Hidden Silicon-Vacancy Centers in Diamond

2021 ◽  
Vol 126 (21) ◽  
Author(s):  
Christopher L. Smallwood ◽  
Ronald Ulbricht ◽  
Matthew W. Day ◽  
Tim Schröder ◽  
Kelsey M. Bates ◽  
...  
Keyword(s):  
Silicon Vacancy

scholarly journals Using silicon-vacancy centers in diamond to probe the full strain tensor

2021 ◽  
Vol 130 (2) ◽  
pp. 024301
Author(s):  
Kelsey M. Bates ◽  
Matthew W. Day ◽  
Christopher L. Smallwood ◽  
Rachel C. Owen ◽  
Tim Schröder ◽  
...  
Keyword(s):  
Strain Tensor ◽  
Silicon Vacancy

scholarly journals Optical spin initialization of spin- 32 silicon vacancy centers in 6H−SiC at room temperature

2021 ◽  
Vol 103 (10) ◽  
Author(s):  
Harpreet Singh ◽  
Andrei N. Anisimov ◽  
Ilia D. Breev ◽  
Pavel G. Baranov ◽  
Dieter Suter
Keyword(s):  
Room Temperature ◽  
Silicon Vacancy

Low-energy hydrogen implantation for silicon Schottky barrier modification

Vacuum ◽  
1986 ◽  
Vol 36 (11-12) ◽  
pp. 917-920 ◽  
Author(s):  
S Ashok ◽  
SA Ringel
Keyword(s):  
Schottky Barrier ◽  
Low Energy ◽  
Hydrogen Implantation

Boron neutralization and hydrogen diffusion in silicon subjected to low-energy hydrogen implantation

1989 ◽  
Vol 48 (1) ◽  
pp. 31-40 ◽  
Author(s):  
T. Zundel ◽  
A. Mesli ◽  
J. C. Muller ◽  
P. Siffert
Keyword(s):  
Hydrogen Diffusion ◽  
Low Energy ◽  
Hydrogen Implantation

Smart‐Cut® : The Basic Fabrication Process for Unibond® Soi Wafers

1996 ◽  
Vol 446 ◽  
Author(s):  
A.J. Auberton‐Hervé ◽  
T. Barge ◽  
F. Metral ◽  
M. Bruel ◽  
B. Aspar ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Low Cost ◽  
Bulk Silicon ◽  
High Quality ◽  
Thin Film Thickness ◽  
Hydrogen Implantation ◽  
Electric Behavior ◽  
Bonding Technology ◽  
Good Uniformity ◽  
Quality Surface

AbstractThe advantage of SOI wafers for device manufacture has been widely studied. To be a real challenger to bulk silicon, SOI producers have to offer SOI wafers in large volume and at low cost. The new Smart‐Cut® SOI process used for the manufacture of the Unibond® SOI wafers answers most of the SOI wafer manufacturability issues. The use of Hydrogen implantation and wafer bonding technology is the best combination to get good uniformity and high quality for both the SOI and buried oxide layer. In this paper, the Smart‐Cut® process is described in detail and material characteristics of Unibond® wafers such as crystalline quality, surface roughness, thin film thickness homogeneity, and electric behavior.

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