scholarly journals Optical spin initialization of spin- 32 silicon vacancy centers in 6H−SiC at room temperature

2021 ◽  
Vol 103 (10) ◽  
Author(s):  
Harpreet Singh ◽  
Andrei N. Anisimov ◽  
Ilia D. Breev ◽  
Pavel G. Baranov ◽  
Dieter Suter
Keyword(s):  
Room Temperature ◽  
Silicon Vacancy

Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC

2007 ◽  
Vol 556-557 ◽  
pp. 371-374 ◽  
Author(s):  
Andreas Gällström ◽  
Björn Magnusson ◽  
Patrick Carlsson ◽  
Nguyen Tien Son ◽  
Anne Henry ◽  
...  
Keyword(s):  
High Temperature ◽  
Cooling Rate ◽  
High Purity ◽  
Room Temperature ◽  
Deep Levels ◽  
High Temperature Annealing ◽  
Cooling Rates ◽  
Silicon Vacancy

The influence of different cooling rates on deep levels in 4H-SiC after high temperature annealing has been investigated. The samples were heated from room temperature to 2300°C, followed by a 20 minutes anneal at this temperature. Different subsequent cooling sequences down to 1100°C were used. The samples have been investigated using photoluminescence (PL) and IV characteristics. The PL intensities of the silicon vacancy (VSi) and UD-2, were found to increase with a faster cooling rate.

scholarly journals Prominent luminescence of silicon-vacancy defects created in bulk silicon carbide p–n junction diodes

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Fumiya Nagasawa ◽  
Makoto Takamura ◽  
Hiroshi Sekiguchi ◽  
Yoshinori Miyamae ◽  
Yoshiaki Oku ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Photoluminescence Spectra ◽  
Bulk Silicon ◽  
Electron Dose ◽  
Vacancy Defects ◽  
Silicon Vacancy ◽  
Temperature Electron ◽  
Electroluminescence Intensity ◽  
Bulk Substrate

AbstractWe investigate fluorescent defect centers in 4H silicon carbide p–n junction diodes fabricated via aluminum-ion implantation into an n-type bulk substrate without the use of an epitaxial growth process. At room temperature, electron-irradiated p–n junction diodes exhibit electroluminescence originating from silicon-vacancy defects. For a diode exposed to an electron dose of $$1 \times 10^{18}\,{{\mathrm{cm}}}^{-2}$$ 1 × 10 18 cm - 2 at $$800\,{{\mathrm{keV}}}$$ 800 keV , the electroluminescence intensity of these defects is most prominent within a wavelength range of 400–$$1100\,{{\mathrm{nm}}}$$ 1100 nm . The commonly observed $${{\mathrm{D}}}_1$$ D 1 emission was sufficiently suppressed in the electroluminescence spectra of all the fabricated diodes, while it was detected in the photoluminescence measurements. The photoluminescence spectra also displayed emission lines from silicon-vacancy defects.

Creation of Color Centers in SiC PN Diodes Using Proton Beam Writing

2019 ◽  
Vol 963 ◽  
pp. 709-713
Author(s):  
Yoji Chiba ◽  
Yuichi Yamazaki ◽  
Takahiro Makino ◽  
Shinichiro Sato ◽  
Naoto Yamada ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Proton Beam ◽  
Room Temperature ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Proton Beam Writing ◽  
Pn Junction ◽  
Optically Detected Magnetic Resonance ◽  
Junction Diode ◽  
Optically Detected

We demonstrated that silicon vacancy (VSi) can be created in SiC pn junction diode by proton beam writing (PBW) without degradation of the diode performance. The VSi showed the same specific emission for both optically and electrically excitation, which suggests that electrically controllable VSi was created. In addition, optically detected magnetic resonance (ODMR) signal was successfully detected from optically excited VSi at room temperature. This result suggests that VSi introduced into the device by PBW still maintain spin manipulating capability, which is an important step toward realizing SiC devices internally equipped with a VSi-based quantum sensor.

scholarly journals Spin coherence and echo modulation of the silicon vacancy in4H−SiCat room temperature

2015 ◽  
Vol 92 (16) ◽  
Author(s):  
S. G. Carter ◽  
Ö. O. Soykal ◽  
Pratibha Dev ◽  
Sophia E. Economou ◽  
E. R. Glaser
Keyword(s):  
Room Temperature ◽  
Spin Coherence ◽  
Silicon Vacancy

scholarly journals Bright Single-Photon Emitting Diodes Based on the Silicon-Vacancy Center in AlN/Diamond Heterostructures

Nanomaterials ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 361 ◽  
Author(s):  
Igor A. Khramtsov ◽  
Dmitry Yu. Fedyanin
Keyword(s):  
Quantum Information ◽  
Information Technologies ◽  
Room Temperature ◽  
Single Photon ◽  
Forward Bias ◽  
Color Centers ◽  
Practical Implementation ◽  
Ambient Conditions ◽  
Silicon Vacancy ◽  
Photon Sources

Practical implementation of many quantum information and sensing technologies relies on the ability to efficiently generate and manipulate single-photon photons under ambient conditions. Color centers in diamond, such as the silicon-vacancy (SiV) center, have recently emerged as extremely attractive single-photon emitters for room temperature applications. However, diamond is a material at the interface between insulators and semiconductors. Therefore, it is extremely difficult to excite color centers electrically and consequently develop bright and efficient electrically driven single-photon sources. Here, using a comprehensive theoretical approach, we propose and numerically demonstrate a concept of a single-photon emitting diode (SPED) based on a SiV center in a nanoscale AlN/diamond heterojunction device. We find that in spite of the high potential barrier for electrons in AlN at the AlN/diamond heterojunction, under forward bias, electrons can be efficiently injected from AlN into the i-type diamond region of the n-AlN/i-diamond/p-diamond heterostructure, which ensures bright single-photon electroluminescence (SPEL) of the SiV center located in the i-type diamond region. The maximum SPEL rate is more than five times higher than what can be achieved in SPEDs based on diamond p-i-n diodes. Despite the high density of defects at the AlN/diamond interface, the SPEL rate can reach about 4 Mcps, which coincides with the limit imposed by the quantum efficiency and the lifetime of the shelving state of the SiV center. These findings provide new insights into the development of bright room-temperature electrically driven single-photon sources for quantum information technologies and, we believe, stimulate further research in this area.

Dependence of Intergranular Fracture on Boundary Topography and Cohesion

1973 ◽  
Vol 31 ◽  
pp. 150-151
Author(s):  
J. E. Doherty ◽  
A. F. Giamei ◽  
B. H. Kear ◽  
C. W. Steinke
Keyword(s):  
Grain Boundary ◽  
Room Temperature ◽  
Nickel Base Superalloy ◽  
Boundary Shear ◽  
Room Temperature Ductility ◽  
Solid Solution Matrix ◽  
Nickel Base ◽  
Solution Matrix ◽  
Different Levels ◽  
Base Superalloy

Recently we have been investigating a class of nickel-base superalloys which possess substantial room temperature ductility. This improvement in ductility is directly related to improvements in grain boundary strength due to increased boundary cohesion through control of detrimental impurities and improved boundary shear strength by controlled grain boundary micros true tures.For these investigations an experimental nickel-base superalloy was doped with different levels of sulphur impurity. The micros tructure after a heat treatment of 1360°C for 2 hr, 1200°C for 16 hr consists of coherent precipitates of γ’ Ni3(Al,X) in a nickel solid solution matrix.

Hepatocyte Alterations in Guinea Pigs FED Polychlorinated Biphenyls (PCBs), Dibenzodioxins (PCDD), AND DIBENZOFURANS (PCDF)

1982 ◽  
Vol 40 ◽  
pp. 56-57
Author(s):  
J. N. Turner ◽  
D. N. Collins
Keyword(s):  
Guinea Pigs ◽  
Room Temperature ◽  
Dose Group ◽  
Methyl Cellulose ◽  
Uranyl Acetate ◽  
Target Organ ◽  
Office Building ◽  
Lead Citrate ◽  
Control Groups ◽  
Cooling Fluid

A fire involving an electric service transformer and its cooling fluid, a mixture of PCBs and chlorinated benzenes, contaminated an office building with a fine soot. Chemical analysis showed PCDDs and PCDFs including the highly toxic tetra isomers. Guinea pigs were chosen as an experimental animal to test the soot's toxicity because of their sensitivity to these compounds, and the liver was examined because it is a target organ. The soot was suspended in 0.75% methyl cellulose and administered in a single dose by gavage at levels of 1,10,100, and 500mgm soot/kgm body weight. Each dose group was composed of 6 males and 6 females. Control groups included 12 (6 male, 6 female) animals fed activated carbon in methyl cellulose, 6 males fed methyl cellulose, and 16 males and 10 females untreated. The guinea pigs were sacrificed at 42 days by suffocation in CO2. Liver samples were immediately immersed and minced in 2% gluteraldehyde in cacadylate buffer at pH 7.4 and 4°C. After overnight fixation, samples were postfixed in 1% OsO4 in cacodylate for 1 hr at room temperature, embedded in epon, sectioned and stained with uranyl acetate and lead citrate.

Domain Formation in Synthetic Quartz

1971 ◽  
Vol 29 ◽  
pp. 156-157
Author(s):  
Joseph J. Comer
Keyword(s):  
Electron Beam ◽  
Room Temperature ◽  
Domain Formation ◽  
Synthetic Quartz ◽  
Transmission Electron ◽  
Black Spots ◽  
Diffraction Mode ◽  
Domain Boundaries ◽  
Kikuchi Lines ◽  
Straight Lines

Domains visible by transmission electron microscopy, believed to be Dauphiné inversion twins, were found in some specimens of synthetic quartz heated to 680°C and cooled to room temperature. With the electron beam close to parallel to the [0001] direction the domain boundaries appeared as straight lines normal to <100> and <410> or <510> directions. In the selected area diffraction mode, a shift of the Kikuchi lines was observed when the electron beam was made to traverse the specimen across a boundary. This shift indicates a change in orientation which accounts for the visibility of the domain by diffraction contrast when the specimen is tilted. Upon exposure to a 100 KV electron beam with a flux of 5x 1018 electrons/cm2sec the boundaries are rapidly decorated by radiation damage centers appearing as black spots. Similar crystallographio boundaries were sometimes found in unannealed (0001) quartz damaged by electrons.

A Liquid Nitrogen Cooled Stage for STEM

1974 ◽  
Vol 32 ◽  
pp. 444-445
Author(s):  
Louis T. Germinario
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Liquid Nitrogen ◽  
Room Temperature ◽  
Objective Lens ◽  
Thermal Drift ◽  
Specimen Holder ◽  
Resolution Capability ◽  
Focal Position

A liquid nitrogen stage has been developed for the JEOL JEM-100B electron microscope equipped with a scanning attachment. The design is a modification of the standard JEM-100B SEM specimen holder with specimen cooling to any temperatures In the range ~ 55°K to room temperature. Since the specimen plane is maintained at the ‘high resolution’ focal position of the objective lens and ‘bumping’ and thermal drift la minimized by supercooling the liquid nitrogen, the high resolution capability of the microscope is maintained (Fig.4).

Cryogenic atomic force microscopy

1991 ◽  
Vol 49 ◽  
pp. 54-55
Author(s):  
K. A. Fisher ◽  
M. G. L. Gustafsson ◽  
M. B. Shattuck ◽  
J. Clarke
Keyword(s):  
Room Temperature ◽  
Rapid Freezing ◽  
Cryogenic Temperatures ◽  
Soft Or ◽  
Electrically Conductive ◽  
Force Microscopy ◽  
Flexible Molecules ◽  
Advantages And Disadvantages ◽  
Atomic Force ◽  
Chemical Perturbation

The atomic force microscope (AFM) is capable of imaging electrically conductive and non-conductive surfaces at atomic resolution. When used to image biological samples, however, lateral resolution is often limited to nanometer levels, due primarily to AFM tip/sample interactions. Several approaches to immobilize and stabilize soft or flexible molecules for AFM have been examined, notably, tethering coating, and freezing. Although each approach has its advantages and disadvantages, rapid freezing techniques have the special advantage of avoiding chemical perturbation, and minimizing physical disruption of the sample. Scanning with an AFM at cryogenic temperatures has the potential to image frozen biomolecules at high resolution. We have constructed a force microscope capable of operating immersed in liquid n-pentane and have tested its performance at room temperature with carbon and metal-coated samples, and at 143° K with uncoated ferritin and purple membrane (PM).

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