scholarly journals Towards identification of silicon vacancy-related electron paramagnetic resonance centers in 4H -SiC

2021 ◽  
Vol 104 (3) ◽  
Author(s):  
A. Csóré ◽  
N. T. Son ◽  
A. Gali
2008 ◽  
Vol 600-603 ◽  
pp. 409-412 ◽  
Author(s):  
T. Umeda ◽  
Norio Morishita ◽  
Takeshi Ohshima ◽  
Hisayoshi Itoh ◽  
Junichi Isoya

We report photo-induced electron paramagnetic resonance (photo-EPR) data for irradiated n-type 4H-SiC. Energy levels and associated photo-induced transitions are discussed for silicon vacancy (VSi), carbon vacancy (VC), carbon antisite-vacancy pair (CSiVC), and divacancy (VSiVC).


2009 ◽  
Vol 615-617 ◽  
pp. 377-380 ◽  
Author(s):  
Nguyen Tien Son ◽  
Junichi Isoya ◽  
Norio Morishita ◽  
Takeshi Ohshima ◽  
Hisayoshi Itoh ◽  
...  

Defects introduced by electron irradiation at ~80-100 K in 3C-, 4H- and 6H-SiC were studied by electron paramagnetic resonance (EPR). A number of EPR spectra, labelled LE1-10, were detected. Combining EPR and supercell calculations, we will show that the LE1 center in 3C-SiC with C2v symmetry and an electron spin S=3/2 is related to the (VSi-Sii)3+ Frenkel pair between the silicon vacancy and a second neighbour Sii interstitial along the <100> direction. Results on other centers, possibly also related to interstitials, are discussed.


1976 ◽  
Vol 37 (C7) ◽  
pp. C7-241-C7-246 ◽  
Author(s):  
J.P. VON DER WEID ◽  
L.C. SCAVARDA DO CARMO ◽  
R. R. DO SANTOS ◽  
B. KOILLER ◽  
S. COSTA RIBEIRO ◽  
...  

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