Towards identification of silicon vacancy-related electron paramagnetic resonance centers in
4H
-SiC
2008 ◽
Vol 600-603
◽
pp. 409-412
◽
2009 ◽
Vol 615-617
◽
pp. 377-380
◽
1999 ◽
Vol 96
(9/10)
◽
pp. 1551-1558
◽
1976 ◽
Vol 37
(C7)
◽
pp. C7-241-C7-246
◽