scholarly journals Formation of thermal donor enhanced by oxygen precipitation in silicon crystal

AIP Advances ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 045019 ◽  
Author(s):  
Kazuhisa Torigoe ◽  
Toshiaki Ono
Keyword(s):  
Silicon Crystal ◽  
Thermal Donor ◽  
Oxygen Precipitation

Kinetic Model of Thermal Donor Evolution

1997 ◽  
Vol 469 ◽  
Author(s):  
K. F. Kelton ◽  
R. Falster
Keyword(s):  
Interstitial Oxygen ◽  
Oxygen Loss ◽  
Free Oxygen ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Cluster Evolution ◽  
Oxygen Precipitation ◽  
High Diffusion Rate ◽  
Normal Diffusion ◽  
Small Clusters

ABSTRACTKinetic aspects of thermal donor (TD) formation in Czochralski silicon are shown to be consistent with the evolution of small oxygen clusters, as described within the classical theory of nucleation. Predictions for TD generation and interstitial oxygen loss are presented. Favorable agreement with experimental data requires that the rate constants describing cluster evolution be increased over those expected for a oliffusion-limited flux based on a normal diffusion coefficient for oxygen in silicon. This may signal an anomalously high diffusion rate for temperatures less than 500°C, as has been suggested by others. However, it may instead signal an enhanced concentration of free oxygen near clusters smaller than the critical size for nucleation. This is expected when the interfacial attachment rates become comparable with the rates at which oxygen atoms arrive in the vicinity of the sub-critical clusters. The link between thermal donor generation and oxygen precipitation processes demonstrated here provides a consistent framework for better understanding and controlling oxygen precipitation in silicon. Further, the kinetic TD generation and oxygen loss data provide a new window into the dynamical processes for small clusters, which underlie all nucleation phenomena.

Effect of Annealing Temperature on the Properties of Silicon Crystal

2011 ◽  
Vol 415-417 ◽  
pp. 1323-1326 ◽  
Author(s):  
Qiu Yan Hao ◽  
Xin Jian Xie ◽  
Bing Zhang Wang ◽  
Cai Chi Liu
Keyword(s):  
Annealing Temperature ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Silicon Crystal ◽  
Minority Carrier Lifetime ◽  
Interstitial Oxygen ◽  
Oxygen Precipitation ◽  
Oxygen Donor ◽  
Infrared Spectrometer ◽  
Effect Of Oxygen

In order to investigate the performance of silicon single crystal depended on the annealing temperature, the minority carrier lifetime, the resistivity and oxygen concentration after different temperature annealing in Ar ambient were examined. And the effect of oxygen and related defects formed during annealed on the minority carrier lifetime were analyzed by microwave photoconductivity method, Fourier transform infrared spectrometer and four-probe measurement. The results indicate that after 450°C annealing for 30h, the resistivity and minority carrier lifetime of silicon increase significantly, while the concentration of interstitial oxygen decreases. After the annealing at 650°C, oxygen donor can be removed and the resistivity and the minority carrier lifetime decrease. During the high-temperature (above 650°C) annealing, the oxygen precipitation can decrease the minority carrier lifetime silicon.

Oxygen precipitation and improved internal gettering in heavily As-doped silicon crystal

2006 ◽  
Vol 9 (1-3) ◽  
pp. 88-91
Author(s):  
Qiuyan Hao ◽  
Caichi Liu ◽  
Hongdi Zhang ◽  
Jianqiang Zhang ◽  
Shilong Sun
Keyword(s):  
Silicon Crystal ◽  
Oxygen Precipitation ◽  
Doped Silicon

Influence of Grown-in Hydrogen on Thermal Donor Formation and Oxygen Precipitation in Czochralski Silicon Crystals

1994 ◽  
Vol 33 (Part 1, No. 10) ◽  
pp. 5577-5584 ◽  
Author(s):  
Akito Hara ◽  
Masaaki Koizuka ◽  
Masaki Aoki ◽  
Tetsuo Fukuda ◽  
Hiroshi Yamada-Kaneta ◽  
...  
Keyword(s):  
Czochralski Silicon ◽  
Thermal Donor ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
Donor Formation

Thermal Donor Formation Affected by Strain Fields Induced by Imperfections of Silicon Crystal Lattice

1993 ◽  
Vol 103-105 ◽  
pp. 543-550
Author(s):  
I.I. Kolkovskii ◽  
P.F. Lugakov ◽  
V.V. Lukyanitsa ◽  
A.V. Tsikunov
Keyword(s):  
Crystal Lattice ◽  
Silicon Crystal ◽  
Strain Fields ◽  
Thermal Donor ◽  
Donor Formation

Effects of Thermal Donor Generation and Annihilation Upon Oxygen Precipitation

1985 ◽  
Vol 59 ◽  
Author(s):  
S. Hahn ◽  
S. C. Shatas ◽  
H. J. Stein
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Carbon ◽  
High Carbon Content ◽  
Furnace Annealing ◽  
Annealing Stage ◽  
Thermal Donor ◽  
Oxygen Precipitation ◽  
Oxygen Precipitate ◽  
Marked Dependence

ABSTRACTRapid thermal annealing and furnace annealing steps have been combined to investigate the effects of thermal donor generation and annihilation upon oxygen precipitation in low and high carbon content silicon wafers. Thermal donors were formed by furnace annealing at 450°C. Rapid thermal annealing was performed in 10 s periods at temperatures between 600° and 1000°C and was followed by two step furnace annealing at 700° and 950 °C. Rapid thermal annealing separates the annealing stage for thermal donor removal from that for removal of oxygen precipitate nuclei, and a marked dependence upon carbon is observed for nuclei stability under RTA. Implications of these observations for models of precipitate nuclei are considered.

Internal Gettering in Czochralski Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
Robert A. Craven
Keyword(s):  
Simple Model ◽  
Integrated Circuit ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Oxygen Precipitation ◽  
Integrated Circuit Fabrication ◽  
Circuit Fabrication

ABSTRACTA review of the use of oxygen precipitation for the purposes of internal gettering in silicon is given. The review considers current ideas about oxygen precipitation mechanisms and the relationships between different precipitate morphologies. Two different paths for oxygen precipitation are considered, the first path being 450C thermal donor - coesite defects and the second being <100> oriented platelets. A summary of the uses of oxygen precipitation gettering in integrated circuit fabrication and a simple model for optimization of internal gettering follows the precipitation discussion.

Evidence for the effect of carbon on oxygen precipitation in Czochralski silicon crystal

2000 ◽  
Vol 87 (8) ◽  
pp. 3669-3673 ◽  
Author(s):  
Peidong Liu ◽  
Xiangyang Ma ◽  
Jinxin Zhang ◽  
Liben Li ◽  
Duanlin Que
Keyword(s):  
Silicon Crystal ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Radial oxygen precipitation of a 12” CZ silicon crystal studied in-situ with high energy X-ray diffraction

2014 ◽  
Vol 211 (11) ◽  
pp. 2450-2454 ◽  
Author(s):  
Christoph Bergmann ◽  
Johannes Will ◽  
Alexander Gröschel ◽  
Matthias Weisser ◽  
Andreas Magerl
Keyword(s):  
Silicon Crystal ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Oxygen Precipitation
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