Effects of Thermal Donor Generation and Annihilation Upon Oxygen Precipitation

1985 ◽  
Vol 59 ◽  
Author(s):  
S. Hahn ◽  
S. C. Shatas ◽  
H. J. Stein
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Carbon ◽  
High Carbon Content ◽  
Furnace Annealing ◽  
Annealing Stage ◽  
Thermal Donor ◽  
Oxygen Precipitation ◽  
Oxygen Precipitate ◽  
Marked Dependence

ABSTRACTRapid thermal annealing and furnace annealing steps have been combined to investigate the effects of thermal donor generation and annihilation upon oxygen precipitation in low and high carbon content silicon wafers. Thermal donors were formed by furnace annealing at 450°C. Rapid thermal annealing was performed in 10 s periods at temperatures between 600° and 1000°C and was followed by two step furnace annealing at 700° and 950 °C. Rapid thermal annealing separates the annealing stage for thermal donor removal from that for removal of oxygen precipitate nuclei, and a marked dependence upon carbon is observed for nuclei stability under RTA. Implications of these observations for models of precipitate nuclei are considered.

Effects of Carbon Concentration Upon Oxygen Precipitation in Cz Si

1987 ◽  
Vol 104 ◽  
Author(s):  
S. Hahn ◽  
M. Arst ◽  
K. N. Ritz ◽  
S. Shatas ◽  
H. J. Stein ◽  
...  
Keyword(s):  
Carbon Content ◽  
Carbon Concentration ◽  
High Carbon ◽  
High Carbon Content ◽  
Oxygen Precipitation ◽  
Oxygen Precipitate ◽  
High Carbon Concentration ◽  
Precipitation Characteristics ◽  
C Complex ◽  
Oxide Precipitate

ABSTRACTEffects of high carbon concentration upon oxygen precipitate formation in Cz silicon have been investigated by combining various furnace and rapid thermal annneals. Even though oxide precipitate density increases with increasing carbon levels, Cs, synchrotron radiation section topographs of processed high carbon content wafers (Cs ∼ 4ppma) exhibit Pendellosung fringes, indicating a strain free bulk state. Our optical microscopic data have also shown very few defect etch features inside the bulk. A model based upon a direct coupling of both SiO2 and Si-C complex formation reactions is used to explain rather unique oxygen precipitation characteristics in the high carbon content Cz Si materials.

Enhanced Formation of Thermal Donors in Germanium Doped Czochralski Silicon Pretreated by Rapid Thermal Annealing

2007 ◽  
Vol 131-133 ◽  
pp. 393-398 ◽  
Author(s):  
Xin Zhu ◽  
De Ren Yang ◽  
Ming Li ◽  
Can Cui ◽  
Lei Wang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Furnace Annealing ◽  
Thermal Donor ◽  
Low Temperature Annealing ◽  
Initial Stage ◽  
Donor Formation ◽  
Oxygen Precipitates ◽  
Ge Doping

The thermal donor formation at 425oC - 450oC in Ge doped Czochralski (GCZ) silicon having about 1016 cm-3 Ge content pretreated by rapid thermal annealing (RTA) and conventional furnace annealing (CFA) has been investigated using low-temperature infrared spectroscopy (LT-IR). The measurements prove that lightly Ge doping can enhance the formation of thermal double donors in the initial stage of the low temperature annealing after RTA process. Ge induced additional grown-in oxygen precipitates during silicon ingot growth and the abundant self-interstitials during RTA may be the reason for the enhancement. However, after extending the annealing time at the low temperatures, the thermal donor concentration in the GCZ silicon is lower than that in the conventional CZ silicon. In final, the mechanism is also discussed.

omparisons of Silicide Formation by Rapid Thermal Annealing and Conventional Furnace Annealing

1987 ◽  
Vol 92 ◽  
Author(s):  
E. Ma ◽  
M. Natan ◽  
B.S. Lim ◽  
M-A. Nicolet
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
Cross Sectional ◽  
Conventional Furnace ◽  
Diffusion Controlled ◽  
Conventional Furnace Annealing ◽  
Kinetics Of

ABSTRACTSilicide formation induced by rapid thermal annealing (RTA) and conventional furnace annealing (CFA) in bilayers of sequentially deposited films of amorphous silicon and polycrystalline Co or Ni is studied with RBS, X-ray diffraction and TEM. Particular attention is paid to the reliability of the RTA temperature measurements in the study of the growth kinetics of the first interfacial compound, Co2Si and Ni2Si, for both RTA and CFA. It is found that the same diffusion-controlled kinetics applies for the silicide formation by RTA in argon and CFA in vacuum with a common activation energy of 2.1+0.2eV for Co2Si and 1.3+0.2eV for Ni Si. Co and Ni atoms are the dominant diffusing species; during silicide formation by both RTA and CFA. The microstructures of the Ni-silicide formed by the two annealing techniques, however, differs considerably from each other, as revealed by cross-sectional TEM studies.

Correlation Between Defect Characteristics and Layer Intermixing in Si Implanted GaAs/AIGaAs Superlattices

1989 ◽  
Vol 147 ◽  
Author(s):  
Samuel Chen ◽  
S.-Tong Lee ◽  
G. Braunstein ◽  
G. Rajeswaran ◽  
P. Fellinger
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Peak Position ◽  
Compound Semiconductor ◽  
Subsequent Annealing ◽  
Semiconductor Superlattices ◽  
Furnace Annealing ◽  
Annealing Conditions ◽  
Induced Defects

AbstractDefects induced by ion implantation and subsequent annealing are found to either promote or suppress layer intermixing in Ill-V compound semiconductor superlattices (SLs). We have studied this intriguing relationship by examining how implantation and annealing conditions affect defect creation and their relevance to intermixing. Layer intermixing has been induced in SLs implanted with 220 keV Si+ at doses < 1 × 1014 ions/cm2 and annealed at 850°C for 3 hrs or 1050°C for 10 s. Upon furnace annealing, significant Si in-diffusion is observed over the entire intermixed region, but with rapid thermal annealing layer intermixing is accompanied by negligible Si movement. TEM showed that the totally intermixed layers are centered around a buried band of secondary defects and below the Si peak position. In the nearsurface region layer intermixing is suppressed and is only partially completed at ≤1 × 1015 Si/cm2. This inhibition is correlated to a loss of the mobile implantation-induced defects, which are responsible for intermixing.

Rapid Thermal Annealing of Neutron Transmutation Toped Czochralski Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
G. M. Berezina ◽  
F. P. Kdrshunov ◽  
N. A. Sobolev ◽  
A. V. Voevodova ◽  
A. A. Stuk
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Neutron Irradiation ◽  
Irradiation Temperature ◽  
Electrical Parameters ◽  
Furnace Annealing ◽  
Annealing Behaviour ◽  
Czochralski Silicon ◽  
Neutron Transmutation

ABSTRACTThe influence of the rapid thermal annealing (RTA) in comparison with that of the standard furnace annealing (FA) on the electrical parameters and photoluminescence (PL) of Czochralski silicon (Cz Si) subjected to neutron irradiation at various temperatures has been studied. The role of the irradiation temperature on the annealing behaviour of electrical parameters in Cz Si has been established. The possibility of getting neutron transmutation doped (NTD) Cz Si having the calculated resistivity by means of the RTA is shown.

Deep-level transient spectroscopy studies of thermal donor annihilation in silicon by rapid thermal annealing

1989 ◽  
Vol 4 (2) ◽  
pp. 241-243 ◽  
Author(s):  
Yutaka Tokuda ◽  
Nobuji Kobayashi ◽  
Yajiro Inoue ◽  
Akira Usami ◽  
Makoto Imura
Keyword(s):  
Heat Treatment ◽  
Thermal Stress ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electron Trap ◽  
Thermal Donor ◽  
Transient Spectroscopy ◽  
Spectroscopy Studies

The annihilation of thermal donors in silicon by rapid thermal annealing (RTA) has been studied with deep-level transient spectroscopy. The electron trap AO (Ec – 0.13 eV) observed after heat treatment at 450 °C for 10 h, which is identified with the thermal donor, disappears by RTA at 800 °C for 10 s. However, four electron traps, A1 (Ec 0.18 eV), A2 (Ec – 0.25 eV), A3 (Ec – 0.36 eV), and A4 (Ec – 0.52 eV), with the concentration of ∼1012 cm−3 are produced after annihilation of thermal donors by RTA. These traps are also observed in silicon which receives only RTA at 800 °C. This indicates that traps A1–A4 are thermal stress induced or quenched-in defects by RTA, not secondary defects resulting from annealing of thermal donors.

Comparison Between Rapid Thermal and Furnace Annealing for A-Si Solid Phase Crystallization

1996 ◽  
Vol 424 ◽  
Author(s):  
Reece Kingi ◽  
Yaozu Wang ◽  
Stephen J. Fonash ◽  
Osama Awadelkarim ◽  
John Mehlhaff
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Growth Time ◽  
Crystallization Time ◽  
Solid Phase Crystallization ◽  
Furnace Annealing ◽  
Lower Growth ◽  
Transient Time

AbstractRapid thermal annealing and furnace annealing for the solid phase crystallization of amorphous silicon thin films deposited using PECVD from argon diluted silane have been compared. Results reveal that the crystallization time, the growth time, and the transient time are temperature activated, and that the resulting polycrystalline silicon grain size is inversely proportional to the annealing temperature, for both furnace annealing and rapid thermal annealing. In addition, rapid thermal annealing was found to result in a lower transient time, a lower growth time, a lower crystallization time, and smaller grain sizes than furnace annealing, for a given annealing temperature. Interestingly, the transient time, growth time, and crystallization time activation energies are much lower for rapid thermal annealing, compared to furnace annealing.We propose two models to explain the observed differences between rapid thermal annealing and furnace annealing.

Vacancy Species Produced by Rapid Thermal Annealing of Silicon Wafers

2015 ◽  
Vol 242 ◽  
pp. 135-140 ◽  
Author(s):  
Vladimir V. Voronkov ◽  
Robert Falster
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Wafers ◽  
Density Profiles ◽  
Cooling Stage ◽  
Czochralski Silicon ◽  
Self Diffusion ◽  
Oxygen Precipitation ◽  
Oxide Precipitate ◽  
Precipitate Density

Rapid thermal annealing (RTA) of Czochralski silicon wafers at around 1260°C installs a depth profile of some vacancy species. Subsequent oxygen precipitation in such wafers is vacancy-assisted. The data on RTA-installed vacancy profiles - and the corresponding precipitate density profiles - suggest that there is a slow-diffusing vacancy species (Vs) along with two fast-diffusing species: a Watkins vacancy (Vw) manifested in irradiation experiments and fast vacancy (Vf) responsible for the high-T vacancy contribution into self-diffusion. The Vs species are lost during cooling stage of RTA, and the loss seems to occur by conversion of Vs into Vf followed by a quick out-diffusion of Vf. A model based on this scenario provides a good fit to the reported profiles of oxide precipitate density in RTA wafers for different values of TRTA and different cooling rates.

Thermal Donor Removal by Rapid Thermal Annealing: Infrared Absorption

1985 ◽  
Vol 46 ◽  
Author(s):  
Herman J. Stein ◽  
S. K. Hahn ◽  
S. C. Shatas
Keyword(s):  
Excited State ◽  
High Temperature ◽  
Excited States ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Infrared Absorption ◽  
Excited State Absorption ◽  
Thermal Donor ◽  
Oxygen Cluster ◽  
Oxygen Precipitates

AbstractRapid thermal annealing of thermal donors in Si with 10 sec anneal times at temperatures between 600 and 1000 °C has been investigated by infrared absorption at 80 K. Thermal donors A through D, which are identified by excited state absorption, are present in as-grown Czochralski Si; whereas excited states for donors A through F as well as photoionization of thermal donors are observed after extended heating at 450 °C. The temperature required for rapid thermal annealing is lower when only donors A through D are present. Removal of thermal donors A through F by rapid thermal annealing at temperatures > 800°C restores 7 to 8 oxygen atoms to interstitial sites per electricallӯ measured donor removed. This ratio supports oxygen cluster models for thermal donors but does not support previous suggestions that such clusters are embryonic forms of high temperature oxygen precipitates.

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