scholarly journals Time-resolved photoluminescence characterization of InGaAs/GaAs nano-ridges monolithically grown on 300 mm Si substrates

2020 ◽  
Vol 127 (10) ◽  
pp. 103104 ◽  
Author(s):  
Yuting Shi ◽  
Lisa C. Kreuzer ◽  
Nils C. Gerhardt ◽  
Marianna Pantouvaki ◽  
Joris Van Campenhout ◽  
...  
Keyword(s):  
Time Resolved ◽  
Si Substrates ◽  
Time Resolved Photoluminescence

Epitaxial Growth and Luminescence Characterization of Si-based Double Heterostructures Light-emitting Diodes with Iron Disilicide Active Region

2006 ◽  
Vol 958 ◽  
Author(s):  
Takashi Suemasu ◽  
Cheng Li ◽  
Tsuyoshi Sunohara ◽  
Yuta Ugajin ◽  
Ken'ichi Kobayashi ◽  
...  
Keyword(s):  
Decay Time ◽  
Room Temperature ◽  
Time Resolved ◽  
Iron Disilicide ◽  
Light Emitting ◽  
Si Substrates ◽  
Carrier Recombination ◽  
Double Heterostructures ◽  
Time Resolved Photoluminescence

ABSTRACTWe have epitaxially grown Si/β-FeSi2/Si (SFS) structures with β-FeSi2 particles or β-FeSi2 continuous films on Si substrates by molecular beam epitaxy (MBE), and observed 1.6 μm electroluminescence (EL) at room temperature (RT). The EL intensity increases with increasing the number of β-FeSi2 layers. The origin of the luminescence was discussed using time-resolved photoluminescence (PL) measurements. It was found that the luminescence originated from two sources, one with a short decay time (τ∼10 ns) and the other with a long decay time (τ∼100 ns). The short decay time was due to carrier recombination in β-FeSi2, whereas the long decay time was due probably to a defect-related D1 line in Si.

Time-resolved photoluminescence characterization of 2 eV band in AlN

2015 ◽  
Vol 12 (4-5) ◽  
pp. 353-356 ◽  
Author(s):  
Ivan A. Aleksandrov ◽  
Vladimir G. Mansurov ◽  
Victor F. Plyusnin ◽  
Konstantin S. Zhuravlev
Keyword(s):  
Time Resolved ◽  
Time Resolved Photoluminescence

Characterization of the Mechanism of Activation for Visible Luminescence in Tb-Doped Crystalline and Amorphous AlN Thin Films

2000 ◽  
Vol 639 ◽  
Author(s):  
C. M. Spalding ◽  
M. L. Caldwell ◽  
A. L. Martin ◽  
V. I. Dimitrova ◽  
M. E. Kordesch ◽  
...  
Keyword(s):  
Thermal Activation ◽  
Secondary Ion Mass Spectrometry ◽  
Rapid Quenching ◽  
Activation Process ◽  
Time Resolved ◽  
Visible Luminescence ◽  
Before And After ◽  
Time Resolved Photoluminescence ◽  
Secondary Ion

ABSTRACTHigh-temperature treatments are necessary for luminescence ‘activation’ of sputterdeposited, RE-doped, III-nitride phosphor materials. We report an investigation of the activation process in crystalline and amorphous Tb-doped AlN films. These films were characterized before and after thermal activation at temperatures up to 1000° C by cathodoluminescence (CL), static and time-resolved photoluminescence (PL), and secondary ion mass spectrometry (SIMS). The results suggest that the absence of luminescence in unactivated and in old activated samples is due to rapid quenching of the RE excited state. Furthermore, the quenching in the activated, aged samples appears to be due to sorption of ambient water vapor. Energy transfer to a harmonic of the O-H vibration is a likely quenching pathway in these samples. Unfortunately, this water-related quenching mechanism is implausible as a candidate in freshly-made, unactivated samples since water is excluded from the growth chamber.

Time-resolved photoluminescence characterization of GaAs nanowire arrays on native substrate

2017 ◽  
Vol 28 (50) ◽  
pp. 505706 ◽  
Author(s):  
Vilgailė Dagytė ◽  
Enrique Barrigón ◽  
Wei Zhang ◽  
Xulu Zeng ◽  
Magnus Heurlin ◽  
...  
Keyword(s):  
Nanowire Arrays ◽  
Time Resolved ◽  
Gaas Nanowire ◽  
Time Resolved Photoluminescence
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