scholarly journals Investigation of gating effect in Si spin MOSFET

2020 ◽  
Vol 116 (2) ◽  
pp. 022403
Author(s):  
Soobeom Lee ◽  
Fabien Rortais ◽  
Ryo Ohshima ◽  
Yuichiro Ando ◽  
Minori Goto ◽  
...  
Keyword(s):  
Gating Effect

scholarly journals Gate Control of Superconductivity in Mesoscopic All-Metallic Devices

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1243
Author(s):  
Claudio Puglia ◽  
Giorgio De Simoni ◽  
Francesco Giazotto
Keyword(s):  
Probability Distributions ◽  
Superconducting Properties ◽  
Microscopic Mechanism ◽  
Technological Potential ◽  
Half Wave ◽  
Thermal Origin ◽  
Gate Control ◽  
Titanium Wire ◽  
Field Emission Of Electrons ◽  
Gating Effect

The possibility to tune, through the application of a control gate voltage, the superconducting properties of mesoscopic devices based on Bardeen–Cooper–Schrieffer metals was recently demonstrated. Despite the extensive experimental evidence obtained on different materials and geometries, a description of the microscopic mechanism at the basis of such an unconventional effect has not been provided yet. This work discusses the technological potential of gate control of superconductivity in metallic superconductors and revises the experimental results, which provide information regarding a possible thermal origin of the effect: first, we review experiments performed on high-critical-temperature elemental superconductors (niobium and vanadium) and show how devices based on these materials can be exploited to realize basic electronic tools, such as a half-wave rectifier. Second, we discuss the origin of the gating effect by showing gate-driven suppression of the supercurrent in a suspended titanium wire and by providing a comparison between thermal and electric switching current probability distributions. Furthermore, we discuss the cold field-emission of electrons from the gate employing finite element simulations and compare the results with experimental data. In our view, the presented data provide a strong indication regarding the unlikelihood of the thermal origin of the gating effect.

Non‐Local Electrostatic Gating Effect in Graphene Revealed by Infrared Nano‐Imaging

Small ◽  
2021 ◽  
pp. 2105687
Author(s):  
Aolin Deng ◽  
Cheng Hu ◽  
Peiyue Shen ◽  
Jiajun Chen ◽  
Xingdong Luo ◽  
...  
Keyword(s):  
Electrostatic Gating ◽  
Non Local ◽  
Nano Imaging ◽  
Gating Effect

CHARACTERIZATION OF A SURFACE-CHARGE MODULATION ELECTROFLUIDIC TRANSISTOR BY HYDRODYNAMIC MEASUREMENTS

2012 ◽  
Vol 11 (04) ◽  
pp. 1240021
Author(s):  
GUILLAUME LAFFITE ◽  
XU ZHENG ◽  
LOUIS RENAUD ◽  
FRANÇOIS BESSUEILLE ◽  
ELISABETH CHARLAIX ◽  
...  
Keyword(s):  
Experimental Study ◽  
Zeta Potential ◽  
Surface Charge ◽  
Gate Voltage ◽  
Silica Surface ◽  
Insulating Layer ◽  
Charge Regulation ◽  
Charge Modulation ◽  
Gating Effect

We present an experimental study on the electrofluidic transistor in this paper. A novel and easy way to integrate the transistor into a microchannel is developed. The performances of the insulating layer, especially the leakage current under gate voltage, are carefully characterized. The change of surface charge on silica surface by gate polarization is measured, however, by measuring the streaming current, the gating effect on zeta potential has not been observed. This result should imply new assumption in the understanding of the charge regulation in the electrical double layer under gate polarization.

scholarly journals Light-enhanced gating effect on the persistent photoconductivity at LaAlO3/SrTiO3 interface

2019 ◽  
Vol 68 (6) ◽  
pp. 067302
Author(s):  
Liu-Yun Dao ◽  
Zi-Tao Zhang ◽  
Yu-Tong Xiao ◽  
Ming-Hao Zhang ◽  
Shuai Wang ◽  
...  
Keyword(s):  
Persistent Photoconductivity ◽  
Gating Effect

Tuning the growth, crosslinking, and gating effect of disulfide-containing PGMAs on the surfaces of mesoporous silica nanoparticles for redox/pH dual-controlled cargo release

2016 ◽  
Vol 7 (12) ◽  
pp. 2171-2179 ◽  
Author(s):  
Hang Zhou ◽  
Xin Wang ◽  
Jun Tang ◽  
Ying-Wei Yang
Keyword(s):  
Mesoporous Silica ◽  
Silica Nanoparticles ◽  
Disulfide Bond ◽  
Mesoporous Silica Nanoparticles ◽  
Gating Effect

PGMA brushes grown on MSN surfaces via SI-ATRP could be cross-linked by cystamine or through a KI/H2O2 (30%) assisted disulfide bond exchange to realize gating effects for redox/pH dual-controlled cargo release.

High-responsivity graphene infrared photodetectors using photo-gating effect

2019 ◽  
Author(s):  
Shoichiro Fukushima ◽  
Masaaki Shimatani ◽  
Satoshi Okuda ◽  
Shinpei Ogawa ◽  
Yasushi Kanai ◽  
...  
Keyword(s):  
Infrared Photodetectors ◽  
High Responsivity ◽  
Gating Effect

Schottky Barrier 3C-SiC Nanowire Field Effect Transistor

2011 ◽  
Vol 679-680 ◽  
pp. 613-616 ◽  
Author(s):  
Konstantinos Rogdakis ◽  
Edwige Bano ◽  
Laurent Montes ◽  
Mikhael Bechelany ◽  
David Cornu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Barriers ◽  
Catalyst Free ◽  
Effect Transistor ◽  
Contact Barrier ◽  
Gating Effect

Back-gated field effect transistors (FETs) based on catalyst-free grown 3C-SiC nanowire (NW) were fabricated. Devices with rectifying Source (S) and Drain (D) contacts have been observed. In contrast with the ohmic-like devices reported in the literature, the Schottky contact barrier (SB) at S/ D regions acts beneficially for the FET performance by suppressing the off-current. At high positive gate voltages (>10 V), the Schottky barriers tend to be more transparent leading to ION/IOFF ratio equal to ~ 103 in contrast to the weak gating effect of the ohmic-contacted 3C-SiC NWFETs.

scholarly journals Correction to “Highly Mobile Two-Dimensional Electron Gases with Strong Gating Effect at the Amorphous-LaAlO3/KTaO3 Interface”

2018 ◽  
Vol 10 (30) ◽  
pp. 25830-25830
Author(s):  
Hui Zhang ◽  
Hongrui Zhang ◽  
Xi Yan ◽  
Xuejing Zhang ◽  
Qinghua Zhang ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases ◽  
Gating Effect
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