High-responsivity graphene infrared photodetectors using photo-gating effect

2019 ◽  
Author(s):  
Shoichiro Fukushima ◽  
Masaaki Shimatani ◽  
Satoshi Okuda ◽  
Shinpei Ogawa ◽  
Yasushi Kanai ◽  
...  
Keyword(s):  
Infrared Photodetectors ◽  
High Responsivity ◽  
Gating Effect

Near-Infrared Photodetectors Based on MoTe2 /Graphene Heterostructure with High Responsivity and Flexibility

Small ◽  
2017 ◽  
Vol 13 (24) ◽  
pp. 1700268 ◽  
Author(s):  
Wenzhi Yu ◽  
Shaojuan Li ◽  
Yupeng Zhang ◽  
Weiliang Ma ◽  
Tian Sun ◽  
...  
Keyword(s):  
Near Infrared ◽  
Infrared Photodetectors ◽  
High Responsivity

Terahertz and infrared photodetectors based on multiple graphene layer and nanoribbon structures

2012 ◽  
Vol 20 (1) ◽  
Author(s):  
V. Ryzhii ◽  
N. Ryabova ◽  
M. Ryzhii ◽  
N. Baryshnikov ◽  
V. Karasik ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Graphene Layer ◽  
Elevated Temperatures ◽  
Radiation Spectrum ◽  
Wide Band ◽  
Graphene Nanoribbon ◽  
Infrared Photodetectors ◽  
High Responsivity ◽  
New Concepts ◽  
Traditional Structures

AbstractWe consider new concepts of terahertz and infrared photodetectors based on multiple graphene layer and multiple graphene nanoribbon structures and we evaluate their responsivity and detectivity. The performance of the detectors under consideration is compared with that of photodetectors made of the traditional structures. We show that due to high values of the quantum efficiency and relatively low rates of thermogeneration, the graphene-based detectors can exhibit high responsivity and detectivity at elevated temperatures in a wide radiation spectrum and can substantially surpass other detectors. The detector being discussed can be used in different wide-band and multi-colour terahertz and infrared systems.

High performance near-infrared photodetectors based on ultrathin SnS nanobelts grown via physical vapor deposition

2016 ◽  
Vol 4 (11) ◽  
pp. 2111-2116 ◽  
Author(s):  
Xing Zhou ◽  
Lin Gan ◽  
Qi Zhang ◽  
Xing Xiong ◽  
Huiqiao Li ◽  
...  
Keyword(s):  
Decay Time ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
High Performance ◽  
Near Infrared ◽  
Infrared Photodetectors ◽  
Fast Decay ◽  
High Responsivity

High performance near-infrared photodetectors based on ultrathin SnS nanobelts grown via physical vapor deposition, showing a high responsivity of 300 A W−1 and a fast decay time of 7 ms.

High responsivity near-infrared photodetectors in evaporated Ge-on-Si

2012 ◽  
Vol 101 (8) ◽  
pp. 081101 ◽  
Author(s):  
V. Sorianello ◽  
A. De Iacovo ◽  
L. Colace ◽  
A. Fabbri ◽  
L. Tortora ◽  
...  
Keyword(s):  
Near Infrared ◽  
Infrared Photodetectors ◽  
High Responsivity

scholarly journals Photodetectors: High-Responsivity Graphene/InAs Nanowire Heterojunction Near-Infrared Photodetectors with Distinct Photocurrent On/Off Ratios (Small 8/2015)

Small ◽  
2015 ◽  
Vol 11 (8) ◽  
pp. 890-890 ◽  
Author(s):  
Jinshui Miao ◽  
Weida Hu ◽  
Nan Guo ◽  
Zhenyu Lu ◽  
Xingqiang Liu ◽  
...  
Keyword(s):  
Near Infrared ◽  
Infrared Photodetectors ◽  
High Responsivity

scholarly journals Photodetectors: Near-Infrared Photodetectors Based on MoTe2 /Graphene Heterostructure with High Responsivity and Flexibility (Small 24/2017)

Small ◽  
2017 ◽  
Vol 13 (24) ◽  
Author(s):  
Wenzhi Yu ◽  
Shaojuan Li ◽  
Yupeng Zhang ◽  
Weiliang Ma ◽  
Tian Sun ◽  
...  
Keyword(s):  
Near Infrared ◽  
Infrared Photodetectors ◽  
High Responsivity

Low dark current and high-responsivity graphene mid-infrared photodetectors using amplification of injected photo-carriers by photo-gating

2019 ◽  
Vol 44 (10) ◽  
pp. 2598 ◽  
Author(s):  
Shoichiro Fukushima ◽  
Masaaki Shimatani ◽  
Satoshi Okuda ◽  
Shinpei Ogawa ◽  
Yasushi Kanai ◽  
...  
Keyword(s):  
Dark Current ◽  
Infrared Photodetectors ◽  
Mid Infrared ◽  
High Responsivity
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