scholarly journals Light-enhanced gating effect on the persistent photoconductivity at LaAlO3/SrTiO3 interface

2019 ◽  
Vol 68 (6) ◽  
pp. 067302
Author(s):  
Liu-Yun Dao ◽  
Zi-Tao Zhang ◽  
Yu-Tong Xiao ◽  
Ming-Hao Zhang ◽  
Shuai Wang ◽  
...  
1991 ◽  
Vol 1 (4) ◽  
pp. 503-510 ◽  
Author(s):  
P. Jeanjean ◽  
J. Sicart ◽  
J. L. Robert ◽  
F. Mollot ◽  
R. Planel

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.


2021 ◽  
Vol 13 (35) ◽  
pp. 41916-41925
Author(s):  
Yu-Hang Ji ◽  
Qin Gao ◽  
An-Ping Huang ◽  
Meng-Qi Yang ◽  
Yan-Qi Liu ◽  
...  

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1243
Author(s):  
Claudio Puglia ◽  
Giorgio De Simoni ◽  
Francesco Giazotto

The possibility to tune, through the application of a control gate voltage, the superconducting properties of mesoscopic devices based on Bardeen–Cooper–Schrieffer metals was recently demonstrated. Despite the extensive experimental evidence obtained on different materials and geometries, a description of the microscopic mechanism at the basis of such an unconventional effect has not been provided yet. This work discusses the technological potential of gate control of superconductivity in metallic superconductors and revises the experimental results, which provide information regarding a possible thermal origin of the effect: first, we review experiments performed on high-critical-temperature elemental superconductors (niobium and vanadium) and show how devices based on these materials can be exploited to realize basic electronic tools, such as a half-wave rectifier. Second, we discuss the origin of the gating effect by showing gate-driven suppression of the supercurrent in a suspended titanium wire and by providing a comparison between thermal and electric switching current probability distributions. Furthermore, we discuss the cold field-emission of electrons from the gate employing finite element simulations and compare the results with experimental data. In our view, the presented data provide a strong indication regarding the unlikelihood of the thermal origin of the gating effect.


2010 ◽  
Vol 97 (14) ◽  
pp. 143510 ◽  
Author(s):  
Khashayar Ghaffarzadeh ◽  
Arokia Nathan ◽  
John Robertson ◽  
Sangwook Kim ◽  
Sanghun Jeon ◽  
...  

2017 ◽  
Vol 8 (7) ◽  
pp. 1538-1544 ◽  
Author(s):  
Sanjib Das ◽  
John A. Peters ◽  
Wenwen Lin ◽  
Svetlana S. Kostina ◽  
Pice Chen ◽  
...  

1996 ◽  
Vol 46 (S2) ◽  
pp. 1123-1124 ◽  
Author(s):  
T. Endo ◽  
J. Santamaria ◽  
A. Hoffmann ◽  
Ivan K. Schuller

2007 ◽  
Vol 101 (1) ◽  
pp. 013709 ◽  
Author(s):  
Jens Reemts ◽  
Achim Kittel

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