Effects of nitrogen-incorporated interface layer on the transient characteristics of hafnium oxide n-metal–oxide–semiconductor field-effect transistors

Chang Yong Kang; Se Jong Rhee; Chang Hwan Choi; Chang Seok Kang; Rino Choi; Mohammad S. Akbar; Manhong Zhang; Siddarth A. Krishnan; Jack C. Lee

doi:10.1063/1.1890479

Effects of nitrogen-incorporated interface layer on the transient characteristics of hafnium oxide n-metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1890479 ◽

2005 ◽

Vol 86 (12) ◽

pp. 123506 ◽

Cited By ~ 2

Author(s):

Chang Yong Kang ◽

Se Jong Rhee ◽

Chang Hwan Choi ◽

Chang Seok Kang ◽

Rino Choi ◽

...

Keyword(s):

Metal Oxide ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Transient Characteristics

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Dominant Device Instability Mechanism in Scaled Metal–Oxide–Semiconductor Field-Effect Transistors with Hafnium Oxide Dielectric

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.091404 ◽

2009 ◽

Vol 48 (9) ◽

pp. 091404 ◽

Cited By ~ 2

Author(s):

Rino Choi ◽

Tea Wan Kim ◽

Hokyung Park ◽

Byoung Hun Lee

Keyword(s):

Metal Oxide ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Instability Mechanism

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Transient characteristics of back-gated multilayer MoS2 and WSe2 channel n-type metal oxide semiconductor field effect transistors: A comparative study

Journal of Applied Physics ◽

10.1063/1.5116627 ◽

2019 ◽

Vol 126 (19) ◽

pp. 194501

Author(s):

Hui Shen ◽

Sitong Bu ◽

Daming Huang

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Transient Characteristics

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Effects of metal gate-induced strain on the performance of metal-oxide-semiconductor field effect transistors with titanium nitride gate electrode and hafnium oxide dielectric

Applied Physics Letters ◽

10.1063/1.2766667 ◽

2007 ◽

Vol 91 (3) ◽

pp. 033511 ◽

Cited By ~ 16

Author(s):

Chang Yong Kang ◽

Rino Choi ◽

M. M. Hussain ◽

Jinguo Wang ◽

Young Jun Suh ◽

...

Keyword(s):

Metal Oxide ◽

Titanium Nitride ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Electrode ◽

Metal Gate

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Effects of fabrication method on defects induced by nitrogen diffusion to the hafnium oxide layer in metal–oxide–semiconductor field effect transistors

Thin Solid Films ◽

10.1016/j.tsf.2016.09.062 ◽

2016 ◽

Vol 620 ◽

pp. 43-47

Author(s):

Ying-Hsin Lu ◽

Ting-Chang Chang ◽

Szu-Han Ho ◽

Ching-En Chen ◽

Jyun-Yu Tsai ◽

...

Keyword(s):

Metal Oxide ◽

Oxide Layer ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication Method ◽

Nitrogen Diffusion

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Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2828134 ◽

2007 ◽

Vol 91 (26) ◽

pp. 263512 ◽

Cited By ~ 6

Author(s):

Chris Beer ◽

Terry Whall ◽

Evan Parker ◽

David Leadley ◽

Brice De Jaeger ◽

...

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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High Performance β-Ga2O3 Solar-Blind Metal–Oxide–Semiconductor Field-Effect Phototransistor With Hafnium Oxide Gate Dielectric Process

IEEE Electron Device Letters ◽

10.1109/led.2021.3061509 ◽

2021 ◽

Vol 42 (4) ◽

pp. 545-548

Author(s):

Zhe Li ◽

Zhaoqing Feng ◽

Yu Xu ◽

Qian Feng ◽

Weidong Zhu ◽

...

Keyword(s):

Metal Oxide ◽

Hafnium Oxide ◽

Field Effect ◽

High Performance ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Solar Blind

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2019.8901832 ◽

2019 ◽

Author(s):

Ryosho Nakane ◽

Shoichi Sato ◽

Masaaki Tanaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2019.2956497 ◽

2020 ◽

Vol 8 ◽

pp. 9-14 ◽

Cited By ~ 1

Author(s):

Ching-Sung Lee ◽

Yan-Ting Shen ◽

Wei-Chou Hsu ◽

Yi-Ping Huang ◽

Cheng-Yang You

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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